Product introduction：
1. Product Introduction - **VS3622DE-VB**
**VS3622DE-VB** is a **dual N-channel MOSFET** in **DFN8(3X3)-B package**, integrating two independent N-type MOSFET components, designed for high-efficiency power management and switching applications. Its **VDS (drain-source voltage)** is **30V**, suitable for **low-voltage power control** and **power management modules**. This model has **Vth (gate-source threshold voltage)** of **1.7V**, with a low threshold voltage, which can provide good conduction characteristics at a lower gate voltage and reduce switching losses.
**VS3622DE-VB** provides **very low on-resistance (RDS(ON))**, which is 20mΩ** at **VGS=4.5V** and 16mΩ** at **VGS=10V**, which enables the MOSFET to maintain low power loss when current passes through. The maximum drain current (ID) is 26A, which is suitable for power systems that require high current control.
Using Trench technology, VS3622DE-VB provides low on-resistance and efficient switching performance. It is widely used in various power management systems, power conversion modules and load control circuits, providing high efficiency and low loss solutions for different electronic applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3)-B |
Dual-N+N |
30V |
|
1.7V |
26A |
|
|
16mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3)-B |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3)-B |
Dual-N+N |
30V |
|
1.7V |
26A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3)-B |
Dual-N+N |
30V |
|
1.7V |
26A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3)-B |
Dual-N+N |
|
|
|
|
|
|
|
2. Detailed parameter description
| **Parameter** | **Description** |
| ------------------------- | ----------------------------------------------- |
| **Model** | VS3622DE-VB |
| **Package** | DFN8(3X3)-B |
| **Configuration** | Dual N-channel MOSFET |
| **VDS (drain-source voltage)** | 30V |
| **VGS (gate-source voltage)** | ±20V |
| **Vth (gate-source threshold voltage)** | 1.7V |
| **RDS(ON)** | 20mΩ @ VGS = 4.5V |
| | 16mΩ @ VGS = 10V |
| **ID (drain current)** | 26A |
| **Maximum power** | About 70W (depending on current and voltage) |
| **Technology** | Trench Technology |
| **Operating Temperature Range** | -55°C to +150°C |
- **VDS (Drain-Source Voltage)**: **30V**, suitable for low voltage power control and switching applications.
- **VGS (Gate-Source Voltage)**: **±20V** maximum, compatible with a variety of gate drive voltages.
- **Vth (Gate-Source Threshold Voltage)**: **1.7V**, low threshold voltage, helps achieve good conduction performance at low voltage.
- **RDS(ON)**: **20mΩ** (VGS=4.5V), **16mΩ** (VGS=10V), very low on-resistance, reducing conduction losses.
- **ID (Drain Current)**: **26A** maximum, suitable for medium and high current applications.
- **Technology**: Adopt **Trench Technology**, providing low on-resistance, suitable for efficient power switching and load control.
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Domain and module applications：
3. Application fields and module examples
# **1. DC-DC converters**
**VS3622DE-VB** is very suitable for **DC-DC converters**, especially in applications that require low voltage and high efficiency. Its low on-resistance (**RDS(ON)**) and **high current capability (26A)** enable it to effectively reduce power losses during the conversion process, thereby improving the efficiency of the entire power module. Whether in **portable devices**, **communication equipment**, or **industrial power**, it can provide stable and reliable current conversion and energy management for the system.
# **6. Communication equipment**
In **communication equipment**, especially **wireless base stations**, **routers**, or **data center power**, **VS3622DE-VB** can be used as a **high-efficiency switching device**, responsible for power regulation and load control. Its **high current** and **low on-resistance** characteristics help improve the system's energy efficiency, reduce overheating, and enhance the stability and reliability of the equipment.
# **7. Smart Grid**
In **smart grid** systems, **VS3622DE-VB** can be used for **power electronic switches** to help efficiently manage the transmission and distribution of electrical energy. This MOSFET can provide efficient switching operations under low voltage conditions to ensure the efficient operation and stability of the power system, and is widely used in **renewable energy management such as wind power and solar power generation**.
--- **Summary**
**VS3622DE-VB** is a **dual N-channel MOSFET** that is very suitable for medium power switching applications. Its low **RDS(ON)** and **high current capability (26A)** give it significant advantages in a variety of high-efficiency power management and load switching applications. Whether used in **DC-DC converters, battery management systems, power tools** or **smart grids**, this MOSFET provides a high-efficiency, low-power solution to help improve overall system energy efficiency, reduce power losses and extend equipment life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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