Product introduction：
1. Product Introduction - **VS3415AC-VB**
**VS3415AC-VB** is a **DFN8(3x3) package** single P-channel MOSFET, using advanced **Trench technology**, designed for low voltage, high efficiency applications. The **maximum drain-source voltage (VDS)** of this MOSFET is **-20V**, and the maximum drain current (**ID**) is **-12A**, which is suitable for low voltage power control and current switching requirements. Its **RDS(ON)** at different gate-source voltages (**VGS**) are: **29mΩ @ VGS=2.5V**, **21mΩ @ VGS=4.5V**, **20mΩ @ VGS=10V**. These characteristics make this MOSFET have significant advantages in low power consumption, high efficiency power management systems.
This MOSFET has excellent switching performance and low power consumption, and is particularly suitable for low-voltage power management, battery-powered devices, portable battery chargers, and power management systems for various small electronic devices. Its compact **DFN8(3x3)** package design makes it particularly suitable for space-constrained application scenarios.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-P |
-20V |
|
-0.8V |
-12A |
29mΩ |
|
20mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-P |
-20V |
|
-0.8V |
-12A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-P |
-20V |
|
-0.8V |
-12A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-P |
|
|
|
|
|
|
|
2. Detailed parameter description
| **Parameter** | **Description** |
| ---------------------- | ------------------------------- |
| **Model** | VS3415AC-VB |
| **Package** | DFN8 (3x3) |
| **Configuration** | Single P-channel MOSFET |
| **VDS (drain-source voltage)** | -20V |
| **VGS (gate-source voltage)** | ±12V |
| **Vth (gate-source threshold voltage)** | -0.8V |
| **RDS(ON)** | 29mΩ @ VGS = 2.5V |
| | 21mΩ @ VGS = 4.5V |
| | 20mΩ @ VGS = 10V |
| **ID (drain current)** | -12A |
| **Maximum power** | About 240W (depending on current and voltage) |
| **Technology** | Trench Technology|
| **Operating Temperature Range** | -55°C to +150°C |
- **VDS (drain-source voltage)**: **-20V**, suitable for low-voltage power supply systems, and can effectively control the flow of current under low voltage.
- **VGS (gate-source voltage)**: maximum **±12V**, compatible with a variety of gate drive voltages, adaptable to a variety of control circuits.
- **Vth (gate-source threshold voltage)**: **-0.8V**, a lower gate-source threshold voltage ensures that the MOSFET turns on quickly at low gate voltage.
- **RDS(ON)**: **29mΩ** (VGS=2.5V), **21mΩ** (VGS=4.5V), **20mΩ** (VGS=10V), low on-resistance improves efficiency and reduces heat loss.
- **ID (drain current)**: Maximum **-12A**, suitable for high current switching applications.
- **Technology**: Adopt **Trench technology** to improve conduction efficiency and switching speed and reduce energy loss.
- **Operating temperature range**: **-55°C to +150°C**, ensuring stability in harsh environments.
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Domain and module applications：
3. Application fields and module examples
# **1. Battery Management System (BMS) **
**VS3415AC-VB** is very suitable for use in **Battery Management System (BMS)** due to its low on-resistance and efficient switching performance, especially for **Li-ion battery** charge and discharge control. This MOSFET can help improve battery charging efficiency, reduce system power consumption and prevent overheating, ensure stable operation of the battery under high load, and improve the overall performance of the battery management system.
# **6. Low-power sensors and control systems **
This MOSFET is also suitable for **low-power sensors** and **embedded control systems**, in which **VS3415AC-VB** provides efficient, low-loss power switching functions, which helps to improve the battery life of the device, especially for long-term standby devices such as **IoT devices** and **sensors**.
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**Summary**
**VS3415AC-VB** is a low voltage, high efficiency **P-channel MOSFET**, using **Trench technology**, with excellent switching performance and low power consumption characteristics. It is particularly suitable for **battery management systems**, **DC-DC converters**, **portable battery-powered devices**, **smart phones** and other fields, and can provide high efficiency power control and current switching functions. Its **low RDS(ON)**, high current carrying capacity and compact package make it have a wide range of application prospects in small electronic devices and low power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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