中文
English
VS30150AD-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction - VS30150AD-VB
**VS30150AD-VB** is a **TO252 package** single N-channel MOSFET, using advanced **Trench technology**, designed for high-performance applications. The **maximum drain-source voltage (VDS)** of this MOSFET is **30V**, and it can carry a large current of **120A**. Its **RDS(ON)** is very low, **2mΩ** (at **VGS=10V**) and **3mΩ** (at **VGS=4.5V**), which can significantly reduce conduction losses and provide extremely high power conversion efficiency.
The low **RDS(ON)** and high current carrying capacity of the VS30150AD-VB make it very suitable for systems that require high current, high efficiency and low power consumption, such as **power management**, **motor drives**, **DC-DC converters** and **inverters**. These features enable it to maintain low temperature operation in high-load working environments, ensuring the stability and efficiency of the equipment.
---
**VS30150AD-VB** is a **TO252 package** single N-channel MOSFET, using advanced **Trench technology**, designed for high-performance applications. The **maximum drain-source voltage (VDS)** of this MOSFET is **30V**, and it can carry a large current of **120A**. Its **RDS(ON)** is very low, **2mΩ** (at **VGS=10V**) and **3mΩ** (at **VGS=4.5V**), which can significantly reduce conduction losses and provide extremely high power conversion efficiency.
The low **RDS(ON)** and high current carrying capacity of the VS30150AD-VB make it very suitable for systems that require high current, high efficiency and low power consumption, such as **power management**, **motor drives**, **DC-DC converters** and **inverters**. These features enable it to maintain low temperature operation in high-load working environments, ensuring the stability and efficiency of the equipment.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
| **Parameter** | **Description** |
| ---------------------- | -------------------------------------------------- |
| **Model** | VS30150AD-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel MOSFET |
| **VDS (drain-source voltage)** | 30V |
| **VGS (gate-source voltage)** | ±20V |
| **Vth (gate-source threshold voltage)** | 1.7V |
| **RDS(ON)** | 3mΩ @ VGS = 4.5V |
| | 2mΩ @ VGS = 10V |
| **ID (drain current)** | 120A |
| **Maximum power** | About 360W (based on current and voltage) |
| **Technology** | Trench technology|
| **Operating temperature range** | -55°C to +150°C |
- **VDS (drain-source voltage)**: Maximum **30V**, suitable for medium and low voltage power management and power conversion.
- **VGS (gate-source voltage)**: Maximum **±20V**, compatible with a variety of gate drive voltages, suitable for a wide range of applications.
- **Vth (gate-source threshold voltage)**: **1.7V**, the low threshold voltage ensures that the MOSFET can turn on quickly at a lower gate voltage and respond quickly.
- **RDS(ON)**: **3mΩ** (VGS=4.5V) and **2mΩ** (VGS=10V), the very low on-resistance greatly reduces power loss and reduces heat accumulation.
- **ID (drain current)**: Maximum **120A**, high current carrying capacity, suitable for high power loads.
- **Technology**: Adopt **Trench technology** to reduce conduction loss and improve switching efficiency.
- **Operating temperature range**: **-55°C to +150°C**, adaptable to extreme environments.
---
| **Parameter** | **Description** |
| ---------------------- | -------------------------------------------------- |
| **Model** | VS30150AD-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel MOSFET |
| **VDS (drain-source voltage)** | 30V |
| **VGS (gate-source voltage)** | ±20V |
| **Vth (gate-source threshold voltage)** | 1.7V |
| **RDS(ON)** | 3mΩ @ VGS = 4.5V |
| | 2mΩ @ VGS = 10V |
| **ID (drain current)** | 120A |
| **Maximum power** | About 360W (based on current and voltage) |
| **Technology** | Trench technology|
| **Operating temperature range** | -55°C to +150°C |
- **VDS (drain-source voltage)**: Maximum **30V**, suitable for medium and low voltage power management and power conversion.
- **VGS (gate-source voltage)**: Maximum **±20V**, compatible with a variety of gate drive voltages, suitable for a wide range of applications.
- **Vth (gate-source threshold voltage)**: **1.7V**, the low threshold voltage ensures that the MOSFET can turn on quickly at a lower gate voltage and respond quickly.
- **RDS(ON)**: **3mΩ** (VGS=4.5V) and **2mΩ** (VGS=10V), the very low on-resistance greatly reduces power loss and reduces heat accumulation.
- **ID (drain current)**: Maximum **120A**, high current carrying capacity, suitable for high power loads.
- **Technology**: Adopt **Trench technology** to reduce conduction loss and improve switching efficiency.
- **Operating temperature range**: **-55°C to +150°C**, adaptable to extreme environments.
---
Domain and module applications：
3. Application fields and module examples
# **1. High-efficiency power management system**
**VS30150AD-VB** is very suitable for power management systems such as **DC-DC converter** and **AC-DC converter** due to its low **RDS(ON)** and high current carrying capacity. Its **low conduction loss** and **high efficiency** reduce heat loss during power conversion and improve the conversion efficiency of the entire power system. It is particularly suitable for power designs that require high efficiency and low power loss.
# **6. Inverter and solar power system**
This MOSFET performs well in **solar inverter** and **power conversion equipment**. **VS30150AD-VB** is able to efficiently convert electrical energy, reduce energy loss in the power system, and improve system efficiency due to its low conduction loss and high current capability. It is particularly suitable for **DC-AC conversion** of high-power solar panels to ensure stable system operation.
---
**Summary**
**VS30150AD-VB** is an excellent **single N-channel MOSFET** with low **RDS(ON)**, high **ID** and good power conversion efficiency, suitable for high-efficiency power management, drive and control applications in multiple fields. Whether in **motor drive**, **battery management system**, **industrial power equipment**, **electric vehicles** and **solar inverter**, **VS30150AD-VB** can provide excellent performance, optimize system efficiency and reduce power loss, and is particularly suitable for application environments requiring high power density and high efficiency.
# **1. High-efficiency power management system**
**VS30150AD-VB** is very suitable for power management systems such as **DC-DC converter** and **AC-DC converter** due to its low **RDS(ON)** and high current carrying capacity. Its **low conduction loss** and **high efficiency** reduce heat loss during power conversion and improve the conversion efficiency of the entire power system. It is particularly suitable for power designs that require high efficiency and low power loss.
# **6. Inverter and solar power system**
This MOSFET performs well in **solar inverter** and **power conversion equipment**. **VS30150AD-VB** is able to efficiently convert electrical energy, reduce energy loss in the power system, and improve system efficiency due to its low conduction loss and high current capability. It is particularly suitable for **DC-AC conversion** of high-power solar panels to ensure stable system operation.
---
**Summary**
**VS30150AD-VB** is an excellent **single N-channel MOSFET** with low **RDS(ON)**, high **ID** and good power conversion efficiency, suitable for high-efficiency power management, drive and control applications in multiple fields. Whether in **motor drive**, **battery management system**, **industrial power equipment**, **electric vehicles** and **solar inverter**, **VS30150AD-VB** can provide excellent performance, optimize system efficiency and reduce power loss, and is particularly suitable for application environments requiring high power density and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
