Product introduction：
Product Introduction
**VS2302AT-VB** is a **single N-channel MOSFET** in **SOT23-3 package**, suitable for low voltage applications. This MOSFET has **maximum drain-source voltage (VDS) of 20V** and **maximum drain current (ID) of 6A**, capable of handling medium power loads. Its **threshold voltage (Vth)** ranges from **0.5V to 1.5V**, enabling fast startup in low voltage environments. Its **on-resistance (RDS(ON))** performs well at different gate-source voltages (VGS), which are **42mΩ (VGS=2.5V)** and **28mΩ (VGS=4.5V)**, respectively, ensuring low power consumption and efficient current conduction. Based on **Trench technology**, VS2302AT-VB has lower conduction losses and is suitable for use in various low-power switching circuits, load drivers, and battery management systems.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
20V |
12（±V） |
0.5~1.5V |
6A |
42mΩ |
|
|
|
Detailed parameter description
- **Model**: VS2302AT-VB
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 42mΩ @ VGS=2.5V
- 28mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 6A
- **Technology type**: Trench technology
- **Switching speed**:
- Switching time: Typical 100ns
- **Operating temperature range**: -55°C to +150°C
- **Maximum power consumption**: 500mW (depending on heat dissipation conditions)
- **Typical applications**: low power switch, battery management, low power supply
Domain and module applications：
Application fields and module examples
1. **Low-power switching circuit**
**VS2302AT-VB** is suitable for **low-power switching circuit**, such as low-voltage switching power supply, low-power load drive and other applications. In these applications, MOSFET can respond quickly to switching operations while maintaining a low on-resistance, reducing power consumption and heat generation, and improving efficiency.
2. **Battery Management System (BMS)**
This MOSFET is widely used in **Battery Management System (BMS)**, especially in situations where precise current control is required. Due to its low threshold voltage (Vth) and efficient on-resistance, VS2302AT-VB can efficiently control the battery charging and discharging process, avoid excessive current loss, and extend battery life.
3. **Low-power power management**
In **low-power power management systems**, VS2302AT-VB provides ideal performance. It can be used as an efficient power switch component in portable devices, battery-powered devices, etc. In these systems, MOSFET can effectively reduce power loss and improve the overall operating efficiency of the system.
4. **Wireless sensor network**
Due to its low power consumption characteristics, VS2302AT-VB is widely used in **wireless sensor network**. It can efficiently manage the power switching operation of the sensor, ensuring that the system can maintain low power consumption during long-term operation, and adapt to various environmental monitoring and Internet of Things applications.
5. **Portable device driver**
In **portable electronic devices**, VS2302AT-VB can be used for drive circuits and battery management modules. Due to its low on-resistance and efficient switching performance, it can provide stable and reliable power switching to ensure long-term operation of the device.
6. **LED drive circuit**
In **LED drive circuit**, VS2302AT-VB can also be used as a switching element to provide stable current to ensure the normal operation of the LED. It is particularly suitable for low-power LED lighting applications and can provide efficient current control without adding too much heat.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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