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VS1H42AI-VB Product details
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Product Introduction
**VS1H42AI-VB** is a single N-channel power MOSFET in TO251 package. The maximum drain-source voltage (VDS) of this MOSFET is 100V, the gate threshold voltage (Vth) is 1.8V, the on-resistance (RDS(ON)) is 12.5mΩ @ VGS=10V, the maximum drain current (ID) is 65A, and it uses Trench technology. Due to its low on-resistance, high current carrying capacity and high drain-source voltage, VS1H42AI-VB is suitable for applications that require efficient current control and high power management, such as power management, electric vehicle drive, motor control and other fields.
**VS1H42AI-VB** is a single N-channel power MOSFET in TO251 package. The maximum drain-source voltage (VDS) of this MOSFET is 100V, the gate threshold voltage (Vth) is 1.8V, the on-resistance (RDS(ON)) is 12.5mΩ @ VGS=10V, the maximum drain current (ID) is 65A, and it uses Trench technology. Due to its low on-resistance, high current carrying capacity and high drain-source voltage, VS1H42AI-VB is suitable for applications that require efficient current control and high power management, such as power management, electric vehicle drive, motor control and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | 12.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Model**: VS1H42AI-VB
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 12.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 65A
- **Maximum power dissipation**: 150W (depending on heat dissipation conditions)
- **Junction temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Features**:
- Low on-resistance, improved efficiency
- High current carrying capacity (65A), suitable for high power applications
- Suitable for high voltage working environment (maximum 100V)
- Optimized heat dissipation performance, support high frequency switching
- Long life, high reliability
- Suitable for high power density applications, reduce system size
- **Model**: VS1H42AI-VB
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 12.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 65A
- **Maximum power dissipation**: 150W (depending on heat dissipation conditions)
- **Junction temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Features**:
- Low on-resistance, improved efficiency
- High current carrying capacity (65A), suitable for high power applications
- Suitable for high voltage working environment (maximum 100V)
- Optimized heat dissipation performance, support high frequency switching
- Long life, high reliability
- Suitable for high power density applications, reduce system size
Domain and module applications：
Applications and module examples
1. **Power management system**
VS1H42AI-VB can be widely used in power management systems, especially in power supply units that require high power transmission and high current carrying capacity. In high-efficiency power supply design, MOSFET is used as a switching element to control current flow, regulate voltage, and provide smooth and stable power output. Due to its low on-resistance and high drain current, it can efficiently control the flow of high-power current, reduce power consumption and improve the overall efficiency of the power system.
2. **Electric vehicle (EV) drive system**
This MOSFET is suitable for battery management and drive systems of electric vehicles, especially in electric drive motor control and battery charging modules. Due to its high current carrying capacity and high-voltage working ability, VS1H42AI-VB can effectively control the starting, braking and running status of the motor, ensuring the high-efficiency operation of electric vehicles under different driving conditions. Its low on-resistance helps reduce energy loss, improve system efficiency and extend battery life.
3. **Motor Control Systems**
VS1H42AI-VB has important applications in motor drive and control systems, especially for industrial motor control systems that require high current and high voltage. As an efficient switching element, this MOSFET can be used to regulate the motor's start-up, acceleration, speed control, and reverse operation. In these high-current working environments, MOSFET can maintain low power loss and improve system response speed and efficiency.
4. **High-efficiency Inverter**
In renewable energy systems such as solar inverters and wind inverters, VS1H42AI-VB can be used to efficiently convert direct current (DC) to alternating current (AC). Inverters require MOSFETs with high efficiency, high voltage resistance, and high current carrying capacity to handle power conversion. Due to its low on-resistance and high current carrying capacity, VS1H42AI-VB can effectively reduce energy losses and optimize the power output during the entire inverter process to ensure stable operation of the system.
5. **Communication equipment power supply**
In the power systems of communication base stations, servers and data centers, VS1H42AI-VB provides power conversion as a switching element. By optimizing power management, MOSFET ensures a stable current supply and improves power conversion efficiency. In addition, the high current capability of MOSFET makes it suitable for high-power power management, enabling efficient energy management in communication equipment and reducing operating costs.
6. **Battery charger**
As a high-efficiency switching element, VS1H42AI-VB is also suitable for battery chargers, especially high-power charging systems. Its high efficiency in current flow control enables it to provide a faster and more reliable charging process, while reducing the heat generated by energy loss during the charging process and extending the service life of the equipment.
1. **Power management system**
VS1H42AI-VB can be widely used in power management systems, especially in power supply units that require high power transmission and high current carrying capacity. In high-efficiency power supply design, MOSFET is used as a switching element to control current flow, regulate voltage, and provide smooth and stable power output. Due to its low on-resistance and high drain current, it can efficiently control the flow of high-power current, reduce power consumption and improve the overall efficiency of the power system.
2. **Electric vehicle (EV) drive system**
This MOSFET is suitable for battery management and drive systems of electric vehicles, especially in electric drive motor control and battery charging modules. Due to its high current carrying capacity and high-voltage working ability, VS1H42AI-VB can effectively control the starting, braking and running status of the motor, ensuring the high-efficiency operation of electric vehicles under different driving conditions. Its low on-resistance helps reduce energy loss, improve system efficiency and extend battery life.
3. **Motor Control Systems**
VS1H42AI-VB has important applications in motor drive and control systems, especially for industrial motor control systems that require high current and high voltage. As an efficient switching element, this MOSFET can be used to regulate the motor's start-up, acceleration, speed control, and reverse operation. In these high-current working environments, MOSFET can maintain low power loss and improve system response speed and efficiency.
4. **High-efficiency Inverter**
In renewable energy systems such as solar inverters and wind inverters, VS1H42AI-VB can be used to efficiently convert direct current (DC) to alternating current (AC). Inverters require MOSFETs with high efficiency, high voltage resistance, and high current carrying capacity to handle power conversion. Due to its low on-resistance and high current carrying capacity, VS1H42AI-VB can effectively reduce energy losses and optimize the power output during the entire inverter process to ensure stable operation of the system.
5. **Communication equipment power supply**
In the power systems of communication base stations, servers and data centers, VS1H42AI-VB provides power conversion as a switching element. By optimizing power management, MOSFET ensures a stable current supply and improves power conversion efficiency. In addition, the high current capability of MOSFET makes it suitable for high-power power management, enabling efficient energy management in communication equipment and reducing operating costs.
6. **Battery charger**
As a high-efficiency switching element, VS1H42AI-VB is also suitable for battery chargers, especially high-power charging systems. Its high efficiency in current flow control enables it to provide a faster and more reliable charging process, while reducing the heat generated by energy loss during the charging process and extending the service life of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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