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VS1H12AS-VB Product details

Product introduction:

Product Introduction

**VS1H12AS-VB** is a high-efficiency N-Channel MOSFET in SOP8 package, designed for medium to high power power management and switching applications. This MOSFET has high voltage resistance, and its maximum drain-source voltage (VDS) is 100V, which is suitable for medium voltage power systems. Its maximum gate-source voltage (VGS) is ±20V, and its turn-on voltage (Vth) is 1.8V, which has strong adaptability. **RDS(ON)** is 33mΩ at VGS=4.5V and 32mΩ at VGS=10V. It has low on-resistance and can effectively reduce power loss. Its maximum drain current (ID) is 9A, which is suitable for high current switching applications. MOSFET uses Trench technology to ensure its stability and reliability in high-efficiency power conversion and high current drive applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 100V 1.8V 9A 32mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 100V 1.8V 9A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 100V 1.8V 9A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
Detailed parameter description

- **Package**: SOP8
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 33mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 9A
- **Technology**: Trench

This MOSFET provides lower on-resistance and higher current carrying capacity, and is suitable for scenarios requiring lower power loss and higher current drive. Through optimized design, MOSFET can effectively reduce heat loss and improve the overall efficiency of the system during power conversion and switching operations.

Domain and module applications:

Applications and module examples: 1. DC-DC converters: Due to its low RDS(ON) and high drain current carrying capacity, the VS1H12AS-VB can be widely used in DC-DC converters, especially in applications where high-efficiency power conversion is required. MOSFETs are used as switching elements to ensure that the system can efficiently convert the input power to the required output voltage through efficient current switching, while reducing heat generation and power loss. In laptops, power adapters and communication equipment, this MOSFET can effectively improve the power efficiency of the system. 2. Electric drive systems: This MOSFET is suitable for electric drive systems such as power tools, electric vehicles, and automation control. Its high current carrying capacity enables it to effectively control the drive current of high-power motors. Low on-resistance means that the drive system is more efficient under load, which can reduce energy waste, thereby extending the battery life and improving the efficiency of the overall drive system.

3. **Battery Management System (BMS)**:
**VS1H12AS-VB** is suitable for battery management systems, especially in applications that require high current and high efficiency, such as electric vehicles, renewable energy storage systems, etc. MOSFET can be used to control the charging and discharging process of the battery. Its low RDS(ON) ensures efficient energy transmission, while helping to reduce the heat loss of the system and ensure the stability and safety of the battery pack.

4. **Load Switch and Protection Circuit**:
In load switching and overload protection circuits, **VS1H12AS-VB** can provide low-power current control functions through its high current carrying capacity and low on-resistance. In a variety of electronic systems, MOSFET can efficiently control the flow of current and protect the load from overcurrent or overvoltage damage. Common applications include power management, load switching modules, and battery protection circuits.

5. **Switching Power Supply (SMPS)**:
The high current capability and low RDS(ON) of this MOSFET make it an excellent performer in switching power supply modules, especially where high-frequency and high-efficiency switching is required. MOSFET is widely used in the power supply systems of electronic products such as high-efficiency power supplies, communication equipment, televisions, and audio equipment to ensure stable power output, reduce power losses, and improve the overall performance of the equipment.

6. **Automotive Electronic Systems**:
**VS1H12AS-VB** can also be used in automotive electronic systems, especially in power management and battery management systems (BMS). In the power systems of electric vehicles and hybrid vehicles, MOSFET is used to efficiently control the flow of current, ensure high current and high-efficiency power conversion, and effectively manage the battery charging and discharging process to improve the energy utilization of the system.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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