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VS150N08BN-VB Product details
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VS150N08BN-VB MOSFET Product Introduction
**VS150N08BN-VB** is a single N-channel MOSFET in a **TO262** package, designed for high-performance, high-current applications. It has a maximum drain-source voltage (VDS) of **80V**, a maximum drain current (ID) of **85A**, and uses **Trench** technology, which excels in low-power applications. This MOSFET has an ultra-low on-resistance (RDS(ON)), and when **VGS = 10V**, the RDS(ON) is only **6mΩ**, which is very suitable for high-current, high-power switching applications. Its high performance and stability make it widely used in power management, industrial control, automotive electronics and other fields, especially in systems that require high load drive and fast switching.
**VS150N08BN-VB** is a single N-channel MOSFET in a **TO262** package, designed for high-performance, high-current applications. It has a maximum drain-source voltage (VDS) of **80V**, a maximum drain current (ID) of **85A**, and uses **Trench** technology, which excels in low-power applications. This MOSFET has an ultra-low on-resistance (RDS(ON)), and when **VGS = 10V**, the RDS(ON) is only **6mΩ**, which is very suitable for high-current, high-power switching applications. Its high performance and stability make it widely used in power management, industrial control, automotive electronics and other fields, especially in systems that require high load drive and fast switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 85A
- **Technology type**: Trench technology
- **Package type**: TO262
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 85A
- **Technology type**: Trench technology
Domain and module applications：
Applications and Module Examples
**1. Power Management & Conversion**
VS150N08BN-VB MOSFET is widely used in power management modules, especially in switching power supplies (SMPS) and DC-DC converters. Its low RDS(ON) value ensures low power consumption and high efficiency power conversion, especially suitable for high current load occasions. It is suitable for high frequency switching power supply, server power supply, industrial power supply and other fields, by reducing conduction loss and heat generation, improving the overall energy efficiency of the system.
**2. Electric Vehicles & Battery Management**
Due to its high current carrying capacity and low on-resistance, VS150N08BN-VB performs well in electric vehicles (EV) and battery management systems (BMS). The low RDS(ON) value of MOSFET can effectively reduce the energy loss during battery charging and discharging, helping to improve the driving range and charging efficiency of electric vehicles. In addition, this MOSFET is also widely used in battery balancing and battery protection circuits.
**3. Industrial Automation & Motor Drives**
In the field of industrial automation, VS150N08BN-VB MOSFET can be used for DC motor drive, stepper motor control and servo motor systems. The low RDS(ON) value helps to reduce energy loss during current transmission and improve the efficiency and accuracy of the motor. Its fast switching characteristics enable it to work stably in situations with large dynamic load changes, and is suitable for automation equipment, robot control systems, etc.
**4. Power Electronics & Inverters**
VS150N08BN-VB MOSFET has the characteristics of being suitable for high-frequency operation and performs well in inverters and power electronic systems. It can be used in solar inverters, wind inverters, power management of power tools and other fields to provide efficient power conversion and stable power output. Due to its low on-resistance, it can effectively reduce energy loss during the conversion process and improve the overall power conversion efficiency.
**5. Automotive Electronics**
In automotive electronics applications, VS150N08BN-VB can be used for power switching, motor control, on-board chargers, and on-board battery management systems. Its high current carrying capacity and fast response characteristics make it widely used in electric vehicles, hybrid electric vehicles (HEVs), and other automotive electronic modules. The low RDS(ON) characteristics of the MOSFET help reduce power consumption during battery management, improve battery efficiency and vehicle mileage.
**6. High-Frequency Power Amplifiers & Communication Equipment**
This MOSFET is suitable for high-frequency power amplifiers and communication equipment, and can provide stable performance in high-frequency operation, especially in applications that require low loss and fast switching. VS150N08BN-VB can be used in wireless communication systems, radar systems, and high-power RF amplifiers to ensure efficient signal transmission and low-loss operation.
**1. Power Management & Conversion**
VS150N08BN-VB MOSFET is widely used in power management modules, especially in switching power supplies (SMPS) and DC-DC converters. Its low RDS(ON) value ensures low power consumption and high efficiency power conversion, especially suitable for high current load occasions. It is suitable for high frequency switching power supply, server power supply, industrial power supply and other fields, by reducing conduction loss and heat generation, improving the overall energy efficiency of the system.
**2. Electric Vehicles & Battery Management**
Due to its high current carrying capacity and low on-resistance, VS150N08BN-VB performs well in electric vehicles (EV) and battery management systems (BMS). The low RDS(ON) value of MOSFET can effectively reduce the energy loss during battery charging and discharging, helping to improve the driving range and charging efficiency of electric vehicles. In addition, this MOSFET is also widely used in battery balancing and battery protection circuits.
**3. Industrial Automation & Motor Drives**
In the field of industrial automation, VS150N08BN-VB MOSFET can be used for DC motor drive, stepper motor control and servo motor systems. The low RDS(ON) value helps to reduce energy loss during current transmission and improve the efficiency and accuracy of the motor. Its fast switching characteristics enable it to work stably in situations with large dynamic load changes, and is suitable for automation equipment, robot control systems, etc.
**4. Power Electronics & Inverters**
VS150N08BN-VB MOSFET has the characteristics of being suitable for high-frequency operation and performs well in inverters and power electronic systems. It can be used in solar inverters, wind inverters, power management of power tools and other fields to provide efficient power conversion and stable power output. Due to its low on-resistance, it can effectively reduce energy loss during the conversion process and improve the overall power conversion efficiency.
**5. Automotive Electronics**
In automotive electronics applications, VS150N08BN-VB can be used for power switching, motor control, on-board chargers, and on-board battery management systems. Its high current carrying capacity and fast response characteristics make it widely used in electric vehicles, hybrid electric vehicles (HEVs), and other automotive electronic modules. The low RDS(ON) characteristics of the MOSFET help reduce power consumption during battery management, improve battery efficiency and vehicle mileage.
**6. High-Frequency Power Amplifiers & Communication Equipment**
This MOSFET is suitable for high-frequency power amplifiers and communication equipment, and can provide stable performance in high-frequency operation, especially in applications that require low loss and fast switching. VS150N08BN-VB can be used in wireless communication systems, radar systems, and high-power RF amplifiers to ensure efficient signal transmission and low-loss operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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