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VN2222LLG-VB Product details
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Product Introduction
**VN2222LLG-VB** is a **single N-channel MOSFET** in a **TO92 package**, with a **maximum drain-source voltage (VDS) of 60V** and a **maximum drain current (ID) of 0.45A**. This MOSFET is based on **Trench technology** and can provide low-power, high-efficiency current control. Its **threshold voltage (Vth)** is **0.8V**, making it suitable for applications that require low-voltage drive. This MOSFET is widely used in low-power switching, low-power power management, and load driving. It can provide stable performance and has a low on-resistance (RDS(ON)), which significantly improves the overall efficiency of the device.
**VN2222LLG-VB** is a **single N-channel MOSFET** in a **TO92 package**, with a **maximum drain-source voltage (VDS) of 60V** and a **maximum drain current (ID) of 0.45A**. This MOSFET is based on **Trench technology** and can provide low-power, high-efficiency current control. Its **threshold voltage (Vth)** is **0.8V**, making it suitable for applications that require low-voltage drive. This MOSFET is widely used in low-power switching, low-power power management, and load driving. It can provide stable performance and has a low on-resistance (RDS(ON)), which significantly improves the overall efficiency of the device.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 60V | 0.8V | 0.45A | 2000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 60V | 0.8V | 0.45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 60V | 0.8V | 0.45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N |
Detailed parameter description
- **Model**: VN2222LLG-VB
- **Package type**: TO92
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.8V
- **On-resistance (RDS(ON))**:
- 2400mΩ @ VGS = 4.5V
- 2000mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.45A
- **Technology type**: Trench technology
- **Switching speed**:
- Switching time: 200ns (typical)
- **Operating temperature range**: -55°C to +150°C
- **Maximum power consumption**: 500mW (depending on heat dissipation conditions)
- **Typical applications**: low power switching, battery management, power regulation
- **Model**: VN2222LLG-VB
- **Package type**: TO92
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.8V
- **On-resistance (RDS(ON))**:
- 2400mΩ @ VGS = 4.5V
- 2000mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.45A
- **Technology type**: Trench technology
- **Switching speed**:
- Switching time: 200ns (typical)
- **Operating temperature range**: -55°C to +150°C
- **Maximum power consumption**: 500mW (depending on heat dissipation conditions)
- **Typical applications**: low power switching, battery management, power regulation
Domain and module applications：
Application fields and module examples
1. **Low-power switching circuit**
**VN2222LLG-VB** is suitable for **low-power switching circuit**, such as small switching power supplies, sensor circuits and current control in low-power devices. In these applications, MOSFET can efficiently manage current flow and provide fast response while maintaining low power consumption to ensure long-term operation of the device.
2. **Battery management system**
In **Battery management system (BMS)**, **VN2222LLG-VB** can be used as a switching element for the battery to control the charging and discharging process. Due to its low threshold voltage (Vth) and moderate on-resistance (RDS(ON)), it can efficiently perform low-power switching operations, helping the system to operate smoothly in a low-voltage environment and extend the battery life.
3. **Power Regulation and Power Management**
**VN2222LLG-VB** is suitable for various **power management** modules and **power regulation circuits**, such as used as a switching element in chargers, transformers, low-power regulators, etc. Its low **RDS(ON)** and efficient switching characteristics make the power conversion loss very small, suitable for use in occasions with high requirements for energy efficiency.
4. **Audio Amplifier Circuit**
In the **audio amplifier circuit**, MOSFET is used as a switch for signal amplification, which can provide good signal conversion characteristics. **VN2222LLG-VB**'s small package and high efficiency make it an ideal choice for many audio applications, especially in low-power consumer audio equipment.
5. **Sensor Interface Circuit**
**VN2222LLG-VB** is also important in **sensor interface circuit**. It can work stably within a small current range, so it is particularly suitable for low-power sensor applications, such as temperature and humidity sensors, gas sensors and other sensors that require stable power supply and switch control.
6. **Microcontroller and digital circuit driver**
This MOSFET is suitable for **microcontroller and digital circuit driver** to control the switch of digital circuits or drive smaller loads. Its high efficiency and low voltage driving characteristics make it widely used in embedded systems, especially in low-power micro devices such as smart home products, wireless sensors and portable electronic products.
1. **Low-power switching circuit**
**VN2222LLG-VB** is suitable for **low-power switching circuit**, such as small switching power supplies, sensor circuits and current control in low-power devices. In these applications, MOSFET can efficiently manage current flow and provide fast response while maintaining low power consumption to ensure long-term operation of the device.
2. **Battery management system**
In **Battery management system (BMS)**, **VN2222LLG-VB** can be used as a switching element for the battery to control the charging and discharging process. Due to its low threshold voltage (Vth) and moderate on-resistance (RDS(ON)), it can efficiently perform low-power switching operations, helping the system to operate smoothly in a low-voltage environment and extend the battery life.
3. **Power Regulation and Power Management**
**VN2222LLG-VB** is suitable for various **power management** modules and **power regulation circuits**, such as used as a switching element in chargers, transformers, low-power regulators, etc. Its low **RDS(ON)** and efficient switching characteristics make the power conversion loss very small, suitable for use in occasions with high requirements for energy efficiency.
4. **Audio Amplifier Circuit**
In the **audio amplifier circuit**, MOSFET is used as a switch for signal amplification, which can provide good signal conversion characteristics. **VN2222LLG-VB**'s small package and high efficiency make it an ideal choice for many audio applications, especially in low-power consumer audio equipment.
5. **Sensor Interface Circuit**
**VN2222LLG-VB** is also important in **sensor interface circuit**. It can work stably within a small current range, so it is particularly suitable for low-power sensor applications, such as temperature and humidity sensors, gas sensors and other sensors that require stable power supply and switch control.
6. **Microcontroller and digital circuit driver**
This MOSFET is suitable for **microcontroller and digital circuit driver** to control the switch of digital circuits or drive smaller loads. Its high efficiency and low voltage driving characteristics make it widely used in embedded systems, especially in low-power micro devices such as smart home products, wireless sensors and portable electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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