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VN10LP-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
**VN10LP-VB** is a **single N-channel MOSFET**, which adopts **TO92** package and is designed for low-power applications and medium current drive. The **VDS** of this MOSFET can reach **60V** at most, and supports **±20V** gate voltage (VGS), which is suitable for scenarios such as power switching, signal processing and low-power load driving. Its **threshold voltage (Vth)** is **0.8V**, which can start at a low gate voltage. The on-resistance (**RDS(ON)**) of the MOSFET is **2Ω** at **VGS=10V**, which is suitable for low-current applications and can effectively control the transmission and control of electric energy.
This model adopts **Trench technology**, which ensures low power loss while providing high performance. It is suitable for low-power switching circuits, small load drives and battery-powered devices.
**VN10LP-VB** is a **single N-channel MOSFET**, which adopts **TO92** package and is designed for low-power applications and medium current drive. The **VDS** of this MOSFET can reach **60V** at most, and supports **±20V** gate voltage (VGS), which is suitable for scenarios such as power switching, signal processing and low-power load driving. Its **threshold voltage (Vth)** is **0.8V**, which can start at a low gate voltage. The on-resistance (**RDS(ON)**) of the MOSFET is **2Ω** at **VGS=10V**, which is suitable for low-current applications and can effectively control the transmission and control of electric energy.
This model adopts **Trench technology**, which ensures low power loss while providing high performance. It is suitable for low-power switching circuits, small load drives and battery-powered devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 60V | 0.8V | 0.45A | 2000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 60V | 0.8V | 0.45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 60V | 0.8V | 0.45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N |
2. Detailed parameter description:
- **Package**: TO92
- **Configuration**: Single N-type channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.8V
- **On-resistance (RDS(ON))**:
- 2400mΩ (VGS=4.5V)
- 2000mΩ (VGS=10V)
- **Maximum drain current (ID)**: 0.45A
- **Technology**: Trench
- **Power loss**: Power loss can be calculated based on current and operating conditions.
- **Operating temperature range**: -55°C to +150°C
- **Package**: TO92
- **Configuration**: Single N-type channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.8V
- **On-resistance (RDS(ON))**:
- 2400mΩ (VGS=4.5V)
- 2000mΩ (VGS=10V)
- **Maximum drain current (ID)**: 0.45A
- **Technology**: Trench
- **Power loss**: Power loss can be calculated based on current and operating conditions.
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
3. Application fields and module examples:
The characteristics of **VN10LP-VB** make it very suitable for the following fields and modules:
1. **Low-power power switch**:
- In **low-power power management**, **VN10LP-VB** can be used as a switching element and is widely used in **battery-powered systems**, **portable devices** (such as small wireless devices, sensors, and low-power home appliances). Due to its low threshold voltage and small leakage current, the energy efficiency of the system can be significantly improved in such applications.
2. **Small load drive**:
- This MOSFET is suitable for **low-power load drive**, such as **LED drive circuit**, **relay drive**, **motor control** (especially small-power motors), and can provide efficient switching control in circuits with small loads. Its relatively high **RDS(ON)** value means that it is suitable for low-power drive requirements with medium currents (such as tens of mA to hundreds of mA).
3. **Signal Processing and Switching Circuits**:
- **VN10LP-VB** is an ideal choice for **signal switching** or **signal conditioning** applications. Due to its lower threshold voltage (**Vth=0.8V**), it is suitable for scenarios that require operation under low voltage signals, such as **audio signal switching** or **sensor switching circuits**. It can play a role in electronic circuits that require precise control of small signals.
4. **Low-power amplifier and control circuits**:
- **VN10LP-VB** can also be used for **low-power amplifier** or **control circuits**, especially in situations where low current drive is required, such as **sensor interface**, **data acquisition system**, etc. Its low power consumption makes it suitable for designs with high requirements for energy efficiency.
5. **Portable devices**:
- In **portable devices**, the **VN10LP-VB** is suitable for small switching circuits and battery-driven devices due to its compact **TO92 package** and low power consumption. Especially in applications such as wireless devices and sensor networks, it can provide reliable power control while saving energy.
In general, the **VN10LP-VB** is a high-efficiency N-type MOSFET designed for low-power, low-current applications, which can meet a wide range of switching power supplies, load driving and signal processing needs.
The characteristics of **VN10LP-VB** make it very suitable for the following fields and modules:
1. **Low-power power switch**:
- In **low-power power management**, **VN10LP-VB** can be used as a switching element and is widely used in **battery-powered systems**, **portable devices** (such as small wireless devices, sensors, and low-power home appliances). Due to its low threshold voltage and small leakage current, the energy efficiency of the system can be significantly improved in such applications.
2. **Small load drive**:
- This MOSFET is suitable for **low-power load drive**, such as **LED drive circuit**, **relay drive**, **motor control** (especially small-power motors), and can provide efficient switching control in circuits with small loads. Its relatively high **RDS(ON)** value means that it is suitable for low-power drive requirements with medium currents (such as tens of mA to hundreds of mA).
3. **Signal Processing and Switching Circuits**:
- **VN10LP-VB** is an ideal choice for **signal switching** or **signal conditioning** applications. Due to its lower threshold voltage (**Vth=0.8V**), it is suitable for scenarios that require operation under low voltage signals, such as **audio signal switching** or **sensor switching circuits**. It can play a role in electronic circuits that require precise control of small signals.
4. **Low-power amplifier and control circuits**:
- **VN10LP-VB** can also be used for **low-power amplifier** or **control circuits**, especially in situations where low current drive is required, such as **sensor interface**, **data acquisition system**, etc. Its low power consumption makes it suitable for designs with high requirements for energy efficiency.
5. **Portable devices**:
- In **portable devices**, the **VN10LP-VB** is suitable for small switching circuits and battery-driven devices due to its compact **TO92 package** and low power consumption. Especially in applications such as wireless devices and sensor networks, it can provide reliable power control while saving energy.
In general, the **VN10LP-VB** is a high-efficiency N-type MOSFET designed for low-power, low-current applications, which can meet a wide range of switching power supplies, load driving and signal processing needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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