Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
20（±V） |
1.7V |
0.3A |
|
|
2800mΩ |
|
2. Detailed parameter description
- **Model**: VN10LF-VB
- **Package**: SOT23-3
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**:
- 3100mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **ID (maximum drain current)**: 0.3A
- **Technology**: Trench
- **Maximum power loss**: Relatively high RDS(ON), suitable for low current applications
- **Operating temperature range**: -55°C to +150°C
- **Features**: Low drain-source voltage, low current load, suitable for high frequency applications
Domain and module applications：
3. Application fields and module examples
**Low power power switch**
**VN10LF-VB** is very suitable for low power power switching, especially in signal processing and low power electronics. Due to its higher RDS(ON), it can still effectively control the current flow in low current applications, especially suitable for small battery-powered devices, providing reliable power switching and control.
Summary
**VN10LF-VB** is an N-channel MOSFET suitable for low power, high efficiency applications, especially suitable for small battery-powered devices, low current load control and consumer electronics. Its higher RDS(ON) is suitable for handling low current loads and is widely used in power management, signal switching, load control and other occasions. Its compact package and high frequency characteristics make it an ideal choice for low power circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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