V5865LG-VB Product details
Product introduction:
**V5865LG-VB** is a high-performance **N-Channel MOSFET**, which adopts **TO252** package and is suitable for a variety of power management applications. It has a **60V** maximum drain-source voltage (VDS) and **58A** maximum drain current (ID), which is very suitable for high-power and high-efficiency switching applications. This device adopts **Trench technology** and has an ultra-low **on-resistance (RDS(ON))**, which is **13mΩ @ VGS=4.5V** and **10mΩ @ VGS=10V**, respectively, making it extremely low in power loss at high currents, thereby improving overall system efficiency. This MOSFET is suitable for use in many fields such as efficient power management, battery management, and motor drive, and can provide powerful power output at low power consumption.
The **Vth** (threshold voltage) of this device is **2.5V**, which ensures that it can operate at a lower gate voltage and is suitable for low-voltage control systems. **V5865LG-VB** is widely used in **power management, load switching, power conversion and motor drive systems** and other fields through its superior conductive properties and high load capacity.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type: ** TO252
- **Configuration: ** Single N-Channel
- **VDS (drain-source voltage): ** 60V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** 2.5V
- **RDS(ON) (on-resistance): **
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **ID (drain current): ** 58A
- **Technology: ** Trench (trench technology)
- **Maximum power consumption: ** 1.2W (based on operating conditions)
- **Operating temperature range: ** -55°C to 150°C
- **Maximum drain-source voltage: ** 60V
- **Maximum gate-source voltage: ** ±20V
- **Switching speed:** Fast switching, suitable for high frequency applications
- **Typical applications:** Power conversion, motor drive, battery protection, load switching, etc.
Domain and module applications:
1. **High-efficiency power management: **
**V5865LG-VB** is suitable for **DC-DC converters** and **AC-DC power modules**. Its ultra-low **on-resistance (RDS(ON))** and high **drain current capability (58A)** make it an ideal choice for high-efficiency power management systems. Applied to high-efficiency power conversion systems, such as **communication power supply, server power supply, LED lighting drive power supply**, etc., it can minimize energy loss and improve the overall efficiency of the power system.
2. **Motor drive system: **
In **motor drive systems**, **V5865LG-VB** provides excellent current control capabilities. Its high **ID (58A)** and low **RDS(ON)** characteristics enable it to efficiently drive various motors, especially suitable for **power tools, electric bicycles, electric vehicle drive systems**, etc. This MOSFET can be used in **inverters** and **motor control modules** to help achieve efficient motor control.
3. **Battery Management System (BMS): **
**V5865LG-VB** is an ideal choice in **Battery Management System (BMS)**, especially in **Li-ion battery management** and **charge and discharge control**. Its **60V** maximum drain-source voltage and **58A** high current capability enable it to effectively manage the battery charging and discharging process, suitable for **Electric Vehicles (EV)** and **Energy Storage Systems**. This MOSFET can provide efficient battery protection and battery balancing functions.
4. **Load Switch and Power Protection: **
In **load switches** and **power protection systems**, **V5865LG-VB** can be used as a switching element of the power supply to control the flow of large currents. The low on-resistance and high-speed switching performance of this MOSFET ensure the efficient operation of the system. It is particularly suitable for industrial equipment, home appliance systems, battery protection circuits, etc., and can provide safe and stable power management for these systems.
5. **LED lighting and high-efficiency power supply applications: **
In the **LED lighting drive** system, **V5865LG-VB** can provide stable power output and reduce power loss. The low **RDS(ON)** value and high current capability make it a key component in the efficient drive system, suitable for **commercial lighting, architectural lighting, street lighting** and other scenarios. This MOSFET can ensure the efficient operation of the LED lighting system under different working conditions and reduce energy consumption.
6. **Automotive electronics: **
**V5865LG-VB** is also widely used in the **automotive electronics** field, especially in **electric vehicle (EV) battery management system**, **motor drive** and **charging system**. It provides excellent performance. Its **60V** drain-source voltage and **58A** high current carrying capacity make it an ideal choice for electric vehicle battery management, drive systems and protection circuits, ensuring the stability and efficiency of the vehicle's electrical system.
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