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V5803NG-VB Product details
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Product Introduction
**V5803NG-VB** is a high-performance N-Channel MOSFET in a TO252 package, designed for high-efficiency power management and power conversion applications. The maximum drain-source voltage (VDS) of this MOSFET is 40V, the maximum gate-source voltage (VGS) is ±20V, and the turn-on voltage (Vth) is 2.5V. Its on-resistance (RDS(ON)) is 6mΩ at VGS=4.5V and 5mΩ at VGS=10V, providing extremely low resistance to reduce power loss and improve system efficiency. The maximum drain current (ID) is 85A, which is suitable for high-power load drive applications. The MOSFET uses Trench technology to ensure that it performs well in high-current and high-efficiency conversion applications, and is particularly suitable for applications requiring low power loss and high current carrying capacity.
**V5803NG-VB** is a high-performance N-Channel MOSFET in a TO252 package, designed for high-efficiency power management and power conversion applications. The maximum drain-source voltage (VDS) of this MOSFET is 40V, the maximum gate-source voltage (VGS) is ±20V, and the turn-on voltage (Vth) is 2.5V. Its on-resistance (RDS(ON)) is 6mΩ at VGS=4.5V and 5mΩ at VGS=10V, providing extremely low resistance to reduce power loss and improve system efficiency. The maximum drain current (ID) is 85A, which is suitable for high-power load drive applications. The MOSFET uses Trench technology to ensure that it performs well in high-current and high-efficiency conversion applications, and is particularly suitable for applications requiring low power loss and high current carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
**V5803NG-VB** provides extremely low on-resistance, significantly reducing power losses, thereby significantly improving system efficiency in high-efficiency power conversion. Its high drain current capability ensures stable driving of high-power loads, suitable for a variety of power conversion and electric drive applications.
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
**V5803NG-VB** provides extremely low on-resistance, significantly reducing power losses, thereby significantly improving system efficiency in high-efficiency power conversion. Its high drain current capability ensures stable driving of high-power loads, suitable for a variety of power conversion and electric drive applications.
Domain and module applications：
Application fields and module examples
1. **High-efficiency power conversion**:
This MOSFET is ideal for high-efficiency power conversion applications. Due to its low RDS(ON) value and high current carrying capacity, **V5803NG-VB** can provide high-efficiency current switching and regulation in DC-DC converters, switching power modules (SMPS) and power management systems, significantly reducing power loss and system heat. In these power systems, MOSFETs are used as switching elements to optimize power conversion efficiency and reduce energy waste.
2. **Electric drive system**:
This MOSFET is suitable for various electric drive systems, especially in applications such as power tools, electric bicycles and electric vehicles (EVs). Its maximum drain current of 85A can drive motors and provide sufficient current to support high-power loads. Low on-resistance ensures efficient conversion of electrical energy, effectively improving the energy efficiency of electric drive systems, and reducing power loss and heat generation.
3. **Battery Management System (BMS)**:
In battery management systems, **V5803NG-VB** can be used as a charge and discharge control switch, especially for the management of high-power battery packs. MOSFET provides low on-resistance and high current carrying capacity, which can effectively manage the current flow during charging and discharging, thereby extending the battery life and optimizing charging efficiency. It is widely used in electric vehicles, solar energy storage systems and high-efficiency energy storage systems.
4. **Load Switch**:
Due to its high current carrying capacity, **V5803NG-VB** can be used as a load switch to control the current flow in a variety of industrial and consumer electronic devices. MOSFET can be used in battery power systems, automation control equipment and electronic load switch modules to ensure stable high-current switching operation and reduce energy loss during switching.
5. **Automotive Electronics**:
This MOSFET is also widely used in the field of automotive electronics, especially in modules such as vehicle power management systems, electric power steering systems (EPS), and vehicle chargers. Its high current carrying capability and low on-resistance enable it to efficiently handle the current requirements of on-board batteries and electric motors, improving battery charging and discharging efficiency in these applications and helping to achieve higher energy management efficiency.
6. **Power Amplifiers and Power Regulators**:
In applications requiring high power regulation, such as power amplifiers and power regulators, the **V5803NG-VB** provides stable current switching and high-efficiency current control. Its low RDS(ON) ensures low power loss under high power loads, suitable for communication systems, broadcast systems, and other high-efficiency power control systems.
1. **High-efficiency power conversion**:
This MOSFET is ideal for high-efficiency power conversion applications. Due to its low RDS(ON) value and high current carrying capacity, **V5803NG-VB** can provide high-efficiency current switching and regulation in DC-DC converters, switching power modules (SMPS) and power management systems, significantly reducing power loss and system heat. In these power systems, MOSFETs are used as switching elements to optimize power conversion efficiency and reduce energy waste.
2. **Electric drive system**:
This MOSFET is suitable for various electric drive systems, especially in applications such as power tools, electric bicycles and electric vehicles (EVs). Its maximum drain current of 85A can drive motors and provide sufficient current to support high-power loads. Low on-resistance ensures efficient conversion of electrical energy, effectively improving the energy efficiency of electric drive systems, and reducing power loss and heat generation.
3. **Battery Management System (BMS)**:
In battery management systems, **V5803NG-VB** can be used as a charge and discharge control switch, especially for the management of high-power battery packs. MOSFET provides low on-resistance and high current carrying capacity, which can effectively manage the current flow during charging and discharging, thereby extending the battery life and optimizing charging efficiency. It is widely used in electric vehicles, solar energy storage systems and high-efficiency energy storage systems.
4. **Load Switch**:
Due to its high current carrying capacity, **V5803NG-VB** can be used as a load switch to control the current flow in a variety of industrial and consumer electronic devices. MOSFET can be used in battery power systems, automation control equipment and electronic load switch modules to ensure stable high-current switching operation and reduce energy loss during switching.
5. **Automotive Electronics**:
This MOSFET is also widely used in the field of automotive electronics, especially in modules such as vehicle power management systems, electric power steering systems (EPS), and vehicle chargers. Its high current carrying capability and low on-resistance enable it to efficiently handle the current requirements of on-board batteries and electric motors, improving battery charging and discharging efficiency in these applications and helping to achieve higher energy management efficiency.
6. **Power Amplifiers and Power Regulators**:
In applications requiring high power regulation, such as power amplifiers and power regulators, the **V5803NG-VB** provides stable current switching and high-efficiency current control. Its low RDS(ON) ensures low power loss under high power loads, suitable for communication systems, broadcast systems, and other high-efficiency power control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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