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UTT80N06L-TQ2-T-VB Product details
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1. Product Introduction
**UTT80N06L-TQ2-T-VB** is a unipolar N-channel power MOSFET in a **TO263** package, designed for high power, high current and high efficiency applications. Its maximum drain-source voltage (VDS) is **60V**, suitable for systems with higher voltages. This MOSFET has a very low on-resistance (RDS(ON)), which is **4mΩ** at **VGS=10V**, which effectively reduces power loss and improves conversion efficiency during switching. Its maximum drain current (ID) is **150A**, and it can work stably under high current load conditions to meet the needs of high power supplies and current-intensive applications. Using **Trench** technology, **UTT80N06L-TQ2-T-VB** performs well in improving efficiency and reducing heat loss. It is widely used in power management, battery management, motor drive, and load switching, and is particularly suitable for applications requiring high current, high power and low loss.
**UTT80N06L-TQ2-T-VB** is a unipolar N-channel power MOSFET in a **TO263** package, designed for high power, high current and high efficiency applications. Its maximum drain-source voltage (VDS) is **60V**, suitable for systems with higher voltages. This MOSFET has a very low on-resistance (RDS(ON)), which is **4mΩ** at **VGS=10V**, which effectively reduces power loss and improves conversion efficiency during switching. Its maximum drain current (ID) is **150A**, and it can work stably under high current load conditions to meet the needs of high power supplies and current-intensive applications. Using **Trench** technology, **UTT80N06L-TQ2-T-VB** performs well in improving efficiency and reducing heat loss. It is widely used in power management, battery management, motor drive, and load switching, and is particularly suitable for applications requiring high current, high power and low loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: UTT80N06L-TQ2-T-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON)**: 4mΩ @ VGS=10V
- **ID (maximum drain current)**: 150A
- **Technology**: Trench
- **Maximum power loss**: Extremely low on-resistance effectively reduces power loss
- **Operating temperature range**: -55°C to +150°C
- **Features**: Low RDS(ON), high current carrying capacity, suitable for high-efficiency power and load switching applications
- **Model**: UTT80N06L-TQ2-T-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON)**: 4mΩ @ VGS=10V
- **ID (maximum drain current)**: 150A
- **Technology**: Trench
- **Maximum power loss**: Extremely low on-resistance effectively reduces power loss
- **Operating temperature range**: -55°C to +150°C
- **Features**: Low RDS(ON), high current carrying capacity, suitable for high-efficiency power and load switching applications
Domain and module applications：
3. Application fields and module examples
# 1. **High-efficiency power management system and DC-DC converter**
**UTT80N06L-TQ2-T-VB** is an ideal choice for high-efficiency power management systems and **DC-DC converters**. Due to its ultra-low RDS(ON) value (4mΩ), it can effectively reduce the loss in the power conversion process and improve the overall efficiency of the system. It is suitable for power systems requiring high power and high current, especially in industrial and consumer electronic devices, such as power adapters, chargers, and power supply modules, to provide more stable power output and efficient energy conversion.
Summary
**UTT80N06L-TQ2-T-VB** is an N-channel power MOSFET with extremely low on-resistance and high current carrying capacity, suitable for power management, battery management, electric vehicles, load switches, industrial automation and other fields. Its excellent switching performance and low power loss characteristics enable it to perform well in high-power, high-current applications, and is particularly suitable for application environments that require high efficiency, high stability and low power consumption.
# 1. **High-efficiency power management system and DC-DC converter**
**UTT80N06L-TQ2-T-VB** is an ideal choice for high-efficiency power management systems and **DC-DC converters**. Due to its ultra-low RDS(ON) value (4mΩ), it can effectively reduce the loss in the power conversion process and improve the overall efficiency of the system. It is suitable for power systems requiring high power and high current, especially in industrial and consumer electronic devices, such as power adapters, chargers, and power supply modules, to provide more stable power output and efficient energy conversion.
Summary
**UTT80N06L-TQ2-T-VB** is an N-channel power MOSFET with extremely low on-resistance and high current carrying capacity, suitable for power management, battery management, electric vehicles, load switches, industrial automation and other fields. Its excellent switching performance and low power loss characteristics enable it to perform well in high-power, high-current applications, and is particularly suitable for application environments that require high efficiency, high stability and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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