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UTT80N06L-TQ2-R-VB Product details
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Product Introduction
**UTT80N06L-TQ2-R-VB** is a high-performance N-channel power MOSFET in TO263 package, designed for high current, high efficiency applications. This MOSFET has a maximum drain-source voltage (VDS) of 60V, a gate threshold voltage (Vth) of 3V, an on-resistance (RDS(ON)) of 4mΩ @ VGS=10V, and a maximum drain current (ID) of 150A. It uses Trench technology and has ultra-low on-resistance and high current carrying capacity, making it suitable for a variety of applications that require high power conversion and low losses. Its ultra-low on-resistance and high current carrying capacity make it very suitable for power management, industrial control, electric vehicles, and high-power electrical systems.
**UTT80N06L-TQ2-R-VB** is a high-performance N-channel power MOSFET in TO263 package, designed for high current, high efficiency applications. This MOSFET has a maximum drain-source voltage (VDS) of 60V, a gate threshold voltage (Vth) of 3V, an on-resistance (RDS(ON)) of 4mΩ @ VGS=10V, and a maximum drain current (ID) of 150A. It uses Trench technology and has ultra-low on-resistance and high current carrying capacity, making it suitable for a variety of applications that require high power conversion and low losses. Its ultra-low on-resistance and high current carrying capacity make it very suitable for power management, industrial control, electric vehicles, and high-power electrical systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: UTT80N06L-TQ2-R-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Maximum power dissipation**: 150W (depending on heat dissipation conditions)
- **Junction temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Features**:
- Very low on-resistance (RDS(ON))
- High current carrying capacity (up to 150A)
- Excellent switching performance
- Suitable for high power applications
- Low power loss, suitable for high power applications
- High heat dissipation performance helps improve reliability
- **Model**: UTT80N06L-TQ2-R-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Maximum power dissipation**: 150W (depending on heat dissipation conditions)
- **Junction temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Features**:
- Very low on-resistance (RDS(ON))
- High current carrying capacity (up to 150A)
- Excellent switching performance
- Suitable for high power applications
- Low power loss, suitable for high power applications
- High heat dissipation performance helps improve reliability
Domain and module applications：
Application fields and module examples
1. **High-efficiency power management system**
**UTT80N06L-TQ2-R-VB** It has important applications in high-efficiency power management systems, especially in high-power power modules. Due to its ultra-low RDS(ON) and high current carrying capacity (150A), it can significantly reduce power losses during power conversion and improve overall system efficiency. It is widely used in DC-DC converters, power electronic systems and high-efficiency power modules to ensure that the power supply remains stable and efficient during peak loads.
2. **Electric vehicles and battery management systems**
In the battery management system of electric vehicles (EV) and hybrid electric vehicles (HEV), UTT80N06L-TQ2-R-VB can be used for current control between batteries and motors, and switching operations during charging and discharging. Its high current carrying capacity enables it to handle the high power requirements of electric vehicles, and is particularly suitable for inverters and electric drive systems to ensure efficient and reliable power transmission. In addition, this MOSFET can also be used in electric vehicle chargers to optimize charging efficiency and reduce power loss.
3. **Inverter and motor drive system**
In the field of industrial control and automation, UTT80N06L-TQ2-R-VB can be used as a switching element in the inverter to regulate current in the motor drive system. Its low on-resistance and high current carrying capacity make it very suitable for high-power motor drive applications such as fans, elevators, pumps and other industrial equipment, ensuring high efficiency and low loss when these systems are running.
4. **UPS (Uninterruptible Power Supply) System**
In the uninterruptible power supply (UPS) system, UTT80N06L-TQ2-R-VB can be used for current switching and power conversion operations to help provide stable and reliable power output. Due to its high current carrying capacity and low on-resistance, it can effectively reduce energy loss and ensure stable power supply during power outages or power fluctuations. It is suitable for applications such as data centers, medical facilities, industrial control, etc. that have high requirements for power stability.
5. **High-frequency switching power supply**
In high-frequency switching power supply modules, UTT80N06L-TQ2-R-VB is suitable for current regulation of high-frequency signals due to its excellent switching performance and low power loss characteristics. Whether in power adapters, LED driver power supplies, or RF power supplies, this MOSFET can provide efficient power conversion and improve the overall efficiency of the system by reducing conduction losses and increasing switching frequency.
6. **Power electronics and energy storage systems**
In the field of power electronics, UTT80N06L-TQ2-R-VB is suitable for efficient power conversion applications such as large-scale energy storage systems and photovoltaic inverters. Its high current handling capability can meet high power conversion needs, reduce system energy loss, and improve the overall efficiency of the system. In solar, wind, and other renewable energy systems, it helps optimize power storage and transmission.
1. **High-efficiency power management system**
**UTT80N06L-TQ2-R-VB** It has important applications in high-efficiency power management systems, especially in high-power power modules. Due to its ultra-low RDS(ON) and high current carrying capacity (150A), it can significantly reduce power losses during power conversion and improve overall system efficiency. It is widely used in DC-DC converters, power electronic systems and high-efficiency power modules to ensure that the power supply remains stable and efficient during peak loads.
2. **Electric vehicles and battery management systems**
In the battery management system of electric vehicles (EV) and hybrid electric vehicles (HEV), UTT80N06L-TQ2-R-VB can be used for current control between batteries and motors, and switching operations during charging and discharging. Its high current carrying capacity enables it to handle the high power requirements of electric vehicles, and is particularly suitable for inverters and electric drive systems to ensure efficient and reliable power transmission. In addition, this MOSFET can also be used in electric vehicle chargers to optimize charging efficiency and reduce power loss.
3. **Inverter and motor drive system**
In the field of industrial control and automation, UTT80N06L-TQ2-R-VB can be used as a switching element in the inverter to regulate current in the motor drive system. Its low on-resistance and high current carrying capacity make it very suitable for high-power motor drive applications such as fans, elevators, pumps and other industrial equipment, ensuring high efficiency and low loss when these systems are running.
4. **UPS (Uninterruptible Power Supply) System**
In the uninterruptible power supply (UPS) system, UTT80N06L-TQ2-R-VB can be used for current switching and power conversion operations to help provide stable and reliable power output. Due to its high current carrying capacity and low on-resistance, it can effectively reduce energy loss and ensure stable power supply during power outages or power fluctuations. It is suitable for applications such as data centers, medical facilities, industrial control, etc. that have high requirements for power stability.
5. **High-frequency switching power supply**
In high-frequency switching power supply modules, UTT80N06L-TQ2-R-VB is suitable for current regulation of high-frequency signals due to its excellent switching performance and low power loss characteristics. Whether in power adapters, LED driver power supplies, or RF power supplies, this MOSFET can provide efficient power conversion and improve the overall efficiency of the system by reducing conduction losses and increasing switching frequency.
6. **Power electronics and energy storage systems**
In the field of power electronics, UTT80N06L-TQ2-R-VB is suitable for efficient power conversion applications such as large-scale energy storage systems and photovoltaic inverters. Its high current handling capability can meet high power conversion needs, reduce system energy loss, and improve the overall efficiency of the system. In solar, wind, and other renewable energy systems, it helps optimize power storage and transmission.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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