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UTT60N06L-TN3-T-VB Product details
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1. Product Introduction
**UTT60N06L-TN3-T-VB** is a unipolar N-channel power MOSFET in **TO252** package, designed for high current and high efficiency applications. Its maximum drain-source voltage (VDS) is **60V**, suitable for applications requiring higher voltage and current control. This MOSFET has an ultra-low on-resistance (RDS(ON)), which is **12mΩ** at **VGS=4.5V** and **4.5mΩ** at **VGS=10V**, providing lower power loss and higher operating efficiency. Its maximum drain current (ID) can reach **97A**, suitable for applications with high current loads. Using **Trench** technology, this MOSFET is widely used in many fields such as high-efficiency power management, DC-DC conversion, electric vehicles, and battery management systems, especially in applications requiring low conduction losses and high current carrying capacity.
**UTT60N06L-TN3-T-VB** is a unipolar N-channel power MOSFET in **TO252** package, designed for high current and high efficiency applications. Its maximum drain-source voltage (VDS) is **60V**, suitable for applications requiring higher voltage and current control. This MOSFET has an ultra-low on-resistance (RDS(ON)), which is **12mΩ** at **VGS=4.5V** and **4.5mΩ** at **VGS=10V**, providing lower power loss and higher operating efficiency. Its maximum drain current (ID) can reach **97A**, suitable for applications with high current loads. Using **Trench** technology, this MOSFET is widely used in many fields such as high-efficiency power management, DC-DC conversion, electric vehicles, and battery management systems, especially in applications requiring low conduction losses and high current carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Model**: UTT60N06L-TN3-T-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON)**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
- **ID (maximum drain current)**: 97A
- **Technology**: Trench
- **Maximum power loss**: The power loss during switching is reduced by low RDS(ON) design
- **Operating temperature range**: -55°C to +150°C
- **Features**: Low RDS(ON), high current carrying capacity, suitable for high-efficiency power supply and load switching applications
- **Model**: UTT60N06L-TN3-T-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON)**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
- **ID (maximum drain current)**: 97A
- **Technology**: Trench
- **Maximum power loss**: The power loss during switching is reduced by low RDS(ON) design
- **Operating temperature range**: -55°C to +150°C
- **Features**: Low RDS(ON), high current carrying capacity, suitable for high-efficiency power supply and load switching applications
Domain and module applications：
3. Application fields and module examples
# 1. **Power management and DC-DC converter**
UTT60N06L-TN3-T-VB is widely used in **DC-DC converter** and power management modules, especially suitable for voltage regulation and current control applications. Due to its ultra-low on-resistance, MOSFET can reduce power loss and thus improve system efficiency. In high-current and high-voltage power conversion systems, especially high-power power supplies and battery-powered systems, it can efficiently manage the flow of power and reduce the heat generation of the system.
Summary
**UTT60N06L-TN3-T-VB** is an N-channel power MOSFET with ultra-low on-resistance and high current carrying capacity, suitable for high-efficiency power management, battery management, electric vehicles, load switches and other fields. Its excellent performance can reduce power loss and improve system efficiency, especially for applications with large current, high-efficiency conversion and low power consumption.
# 1. **Power management and DC-DC converter**
UTT60N06L-TN3-T-VB is widely used in **DC-DC converter** and power management modules, especially suitable for voltage regulation and current control applications. Due to its ultra-low on-resistance, MOSFET can reduce power loss and thus improve system efficiency. In high-current and high-voltage power conversion systems, especially high-power power supplies and battery-powered systems, it can efficiently manage the flow of power and reduce the heat generation of the system.
Summary
**UTT60N06L-TN3-T-VB** is an N-channel power MOSFET with ultra-low on-resistance and high current carrying capacity, suitable for high-efficiency power management, battery management, electric vehicles, load switches and other fields. Its excellent performance can reduce power loss and improve system efficiency, especially for applications with large current, high-efficiency conversion and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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