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UTT50N06L-TN3-R-VB Product details
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Product Introduction
**UTT50N06L-TN3-R-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for medium and high power power management and power conversion applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, the maximum gate-source voltage (VGS) is ±20V, and the turn-on voltage (Vth) is 2.5V, ensuring that it provides stable operating performance in various power systems and power control circuits. Its on-resistance (RDS(ON)) is 10mΩ at VGS=10V and 13mΩ at VGS=4.5V, which significantly reduces power loss and improves power conversion efficiency. It is particularly suitable for high-efficiency switching power supplies and electric drive control.
The maximum drain current (ID) is 58A, which enables it to handle high current loads and is suitable for battery management systems, power tools, electric vehicles and other switching circuits that require high current. The MOSFET uses Trench technology to further optimize the on-resistance, ensuring that the current flows more efficiently, reducing the heat and energy loss of the system. This MOSFET is an ideal choice for high-power power supply and load switching applications.
**UTT50N06L-TN3-R-VB** is a high-performance N-Channel MOSFET in TO252 package, designed for medium and high power power management and power conversion applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, the maximum gate-source voltage (VGS) is ±20V, and the turn-on voltage (Vth) is 2.5V, ensuring that it provides stable operating performance in various power systems and power control circuits. Its on-resistance (RDS(ON)) is 10mΩ at VGS=10V and 13mΩ at VGS=4.5V, which significantly reduces power loss and improves power conversion efficiency. It is particularly suitable for high-efficiency switching power supplies and electric drive control.
The maximum drain current (ID) is 58A, which enables it to handle high current loads and is suitable for battery management systems, power tools, electric vehicles and other switching circuits that require high current. The MOSFET uses Trench technology to further optimize the on-resistance, ensuring that the current flows more efficiently, reducing the heat and energy loss of the system. This MOSFET is an ideal choice for high-power power supply and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench
UTT50N06L-TN3-R-VB offers low on-resistance and high current carrying capability, particularly suitable for high power switching power supplies and electric drive circuits with good thermal management and high efficiency. Its high current capability enables stable operation in high-load applications, while its low RDS(ON) value ensures low power losses.
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench
UTT50N06L-TN3-R-VB offers low on-resistance and high current carrying capability, particularly suitable for high power switching power supplies and electric drive circuits with good thermal management and high efficiency. Its high current capability enables stable operation in high-load applications, while its low RDS(ON) value ensures low power losses.
Domain and module applications：
Application fields and module examples
1. **Power management and power conversion**:
**UTT50N06L-TN3-R-VB** is suitable for high-efficiency power management and power conversion applications, especially in DC-DC converters and switching power supply systems. In these power modules, MOSFETs are used as switching elements to provide efficient power conversion through low RDS(ON) values, reducing power losses and improving system efficiency. It is particularly suitable for high-efficiency power supply designs that require large current carrying, such as communication equipment and industrial power supply systems.
2. **Electric drive system**:
This MOSFET is suitable for electric drive systems, especially in applications such as power tools, electric bicycles, and electric vehicles (EVs). Its maximum drain current capability of 58A ensures that it can drive high-power motors, while its low on-resistance helps reduce energy losses. The high efficiency of UTT50N06L-TN3-R-VB can significantly improve the energy efficiency of electric drive systems and extend battery life, especially in applications requiring high power density and efficient control.
3. **Battery Management System (BMS)**:
In battery management systems, **UTT50N06L-TN3-R-VB** is an ideal choice. It is suitable for battery charge and discharge control, overcurrent protection and battery balancing. In electric vehicles, solar energy storage systems and other high-efficiency energy storage systems, MOSFET can provide efficient current management and reduce power loss during charging and discharging, thereby improving the overall efficiency of the system and the service life of the battery.
4. **Load Switch and Current Control**:
UTT50N06L-TN3-R-VB is suitable for load switching and current control circuits, especially in high current load applications. Its high current carrying capacity of 58A makes it an ideal switching element in battery management systems, power tools and high-power devices. MOSFET can reduce power loss and ensure stable operation of the load through efficient current control.
5. **Automotive Electronics**:
In the field of automotive electronics, UTT50N06L-TN3-R-VB is suitable for applications such as vehicle power management systems, electric power steering systems (EPS), and on-board chargers (OBC). It can efficiently control the charging and discharging process of the vehicle battery and ensure efficient energy transmission between the battery and the motor in the electric vehicle. In these applications, the low on-resistance and high current carrying capacity of MOSFET can effectively reduce energy loss and improve the efficiency of the vehicle power system.
6. **Industrial and Consumer Electronics**:
In industrial and consumer electronics, **UTT50N06L-TN3-R-VB** can be used in power control applications such as power amplifiers, power conditioners, wireless routers, and motor drivers. Due to its low RDS(ON) and high current capability, it can provide extremely high energy efficiency in high-power switches and control circuits. It is particularly suitable for industrial automation and consumer electronic devices with high requirements for thermal management and high efficiency.
1. **Power management and power conversion**:
**UTT50N06L-TN3-R-VB** is suitable for high-efficiency power management and power conversion applications, especially in DC-DC converters and switching power supply systems. In these power modules, MOSFETs are used as switching elements to provide efficient power conversion through low RDS(ON) values, reducing power losses and improving system efficiency. It is particularly suitable for high-efficiency power supply designs that require large current carrying, such as communication equipment and industrial power supply systems.
2. **Electric drive system**:
This MOSFET is suitable for electric drive systems, especially in applications such as power tools, electric bicycles, and electric vehicles (EVs). Its maximum drain current capability of 58A ensures that it can drive high-power motors, while its low on-resistance helps reduce energy losses. The high efficiency of UTT50N06L-TN3-R-VB can significantly improve the energy efficiency of electric drive systems and extend battery life, especially in applications requiring high power density and efficient control.
3. **Battery Management System (BMS)**:
In battery management systems, **UTT50N06L-TN3-R-VB** is an ideal choice. It is suitable for battery charge and discharge control, overcurrent protection and battery balancing. In electric vehicles, solar energy storage systems and other high-efficiency energy storage systems, MOSFET can provide efficient current management and reduce power loss during charging and discharging, thereby improving the overall efficiency of the system and the service life of the battery.
4. **Load Switch and Current Control**:
UTT50N06L-TN3-R-VB is suitable for load switching and current control circuits, especially in high current load applications. Its high current carrying capacity of 58A makes it an ideal switching element in battery management systems, power tools and high-power devices. MOSFET can reduce power loss and ensure stable operation of the load through efficient current control.
5. **Automotive Electronics**:
In the field of automotive electronics, UTT50N06L-TN3-R-VB is suitable for applications such as vehicle power management systems, electric power steering systems (EPS), and on-board chargers (OBC). It can efficiently control the charging and discharging process of the vehicle battery and ensure efficient energy transmission between the battery and the motor in the electric vehicle. In these applications, the low on-resistance and high current carrying capacity of MOSFET can effectively reduce energy loss and improve the efficiency of the vehicle power system.
6. **Industrial and Consumer Electronics**:
In industrial and consumer electronics, **UTT50N06L-TN3-R-VB** can be used in power control applications such as power amplifiers, power conditioners, wireless routers, and motor drivers. Due to its low RDS(ON) and high current capability, it can provide extremely high energy efficiency in high-power switches and control circuits. It is particularly suitable for industrial automation and consumer electronic devices with high requirements for thermal management and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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