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UTT50N05G-TN3-R-VB Product details
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UTT50N05G-TN3-R-VB MOSFET Product Introduction
**UTT50N05G-TN3-R-VB** is a single N-channel MOSFET in a **TO252** package, suitable for medium voltage and high current applications. Its maximum drain-source voltage is **60V**, it can carry a current of **58A**, and has excellent conduction performance and low on-resistance (RDS(ON)). This MOSFET adopts **Trench** technology, has low switching losses and high efficiency in high-frequency switching applications, and can effectively improve system efficiency. It is particularly suitable for power management, industrial drives, automotive electronics and other high-current applications, providing stable and efficient power conversion and regulation.
**UTT50N05G-TN3-R-VB** is a single N-channel MOSFET in a **TO252** package, suitable for medium voltage and high current applications. Its maximum drain-source voltage is **60V**, it can carry a current of **58A**, and has excellent conduction performance and low on-resistance (RDS(ON)). This MOSFET adopts **Trench** technology, has low switching losses and high efficiency in high-frequency switching applications, and can effectively improve system efficiency. It is particularly suitable for power management, industrial drives, automotive electronics and other high-current applications, providing stable and efficient power conversion and regulation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 58A
- **Technology type**: Trench technology
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 58A
- **Technology type**: Trench technology
Domain and module applications：
Applications and module examples
**1. Power Conversion & Management**
**UTT50N05G-TN3-R-VB** MOSFET performs well in power conversion and management systems, especially in DC-DC converters, AC-DC converters and uninterruptible power supplies (UPS), providing efficient energy conversion. Its low RDS(ON) characteristics can effectively reduce power losses and ensure that the power system has higher conversion efficiency, thereby reducing overall heat loss.
**2. Electric Vehicles & Battery Management Systems**
This MOSFET is widely used in electric vehicles (EV) and energy storage systems, especially for battery management, charging control and electric drive systems. Due to its high current carrying capacity and low on-resistance, it can improve the efficiency of battery charging and discharging and extend battery life, and is particularly suitable for electric vehicle charging stations and home energy storage solutions.
**3. Industrial Automation & Drive Control**
In the field of industrial automation, **UTT50N05G-TN3-R-VB** is suitable for motor drive control, robotic systems, smart grids, and other high-power drive modules. Its excellent current handling capability and low switching losses enable it to efficiently control large motors and automation equipment, ensuring efficient and reliable operation in industrial control systems.
**4. Solar Inverters**
This MOSFET is also very suitable for inverter modules in photovoltaic power generation systems. It can withstand high voltages and currents, helping to convert the DC power generated by solar panels into stable AC power, supporting efficient energy management. When used in photovoltaic inverters, the **UTT50N05G-TN3-R-VB** MOSFET can significantly reduce energy losses and improve overall system efficiency.
**5. Power Tools & Consumer Electronics**
In high-power power tools and consumer electronics, **UTT50N05G-TN3-R-VB** MOSFET can also provide stable current management and efficient switching control. Its excellent conductivity and high current carrying capacity make it an ideal power switching component in these fields, which can reduce the heat generation of equipment and improve the stability and service life of the system.
**6. Switching Power Supplies**
This MOSFET is widely used in high-efficiency switching power supplies (SMPS), especially power adapters and LED driver power supplies. Due to its low on-resistance, it can reduce the energy loss in the switching power supply, greatly improve the power conversion efficiency, thereby reducing the heat generation inside the power supply and improving the overall efficiency of the system.
**7. Wireless Communications & Base Station Equipment**
**UTT50N05G-TN3-R-VB** MOSFET is also widely used in wireless communications equipment, especially in the power module, signal modulation and switch control of base stations. It can efficiently perform power switching, thereby improving the stability and power efficiency of communication equipment.
**1. Power Conversion & Management**
**UTT50N05G-TN3-R-VB** MOSFET performs well in power conversion and management systems, especially in DC-DC converters, AC-DC converters and uninterruptible power supplies (UPS), providing efficient energy conversion. Its low RDS(ON) characteristics can effectively reduce power losses and ensure that the power system has higher conversion efficiency, thereby reducing overall heat loss.
**2. Electric Vehicles & Battery Management Systems**
This MOSFET is widely used in electric vehicles (EV) and energy storage systems, especially for battery management, charging control and electric drive systems. Due to its high current carrying capacity and low on-resistance, it can improve the efficiency of battery charging and discharging and extend battery life, and is particularly suitable for electric vehicle charging stations and home energy storage solutions.
**3. Industrial Automation & Drive Control**
In the field of industrial automation, **UTT50N05G-TN3-R-VB** is suitable for motor drive control, robotic systems, smart grids, and other high-power drive modules. Its excellent current handling capability and low switching losses enable it to efficiently control large motors and automation equipment, ensuring efficient and reliable operation in industrial control systems.
**4. Solar Inverters**
This MOSFET is also very suitable for inverter modules in photovoltaic power generation systems. It can withstand high voltages and currents, helping to convert the DC power generated by solar panels into stable AC power, supporting efficient energy management. When used in photovoltaic inverters, the **UTT50N05G-TN3-R-VB** MOSFET can significantly reduce energy losses and improve overall system efficiency.
**5. Power Tools & Consumer Electronics**
In high-power power tools and consumer electronics, **UTT50N05G-TN3-R-VB** MOSFET can also provide stable current management and efficient switching control. Its excellent conductivity and high current carrying capacity make it an ideal power switching component in these fields, which can reduce the heat generation of equipment and improve the stability and service life of the system.
**6. Switching Power Supplies**
This MOSFET is widely used in high-efficiency switching power supplies (SMPS), especially power adapters and LED driver power supplies. Due to its low on-resistance, it can reduce the energy loss in the switching power supply, greatly improve the power conversion efficiency, thereby reducing the heat generation inside the power supply and improving the overall efficiency of the system.
**7. Wireless Communications & Base Station Equipment**
**UTT50N05G-TN3-R-VB** MOSFET is also widely used in wireless communications equipment, especially in the power module, signal modulation and switch control of base stations. It can efficiently perform power switching, thereby improving the stability and power efficiency of communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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