UTT36P03-VB Product details
Product introduction:
**UTT36P03-VB** is a unipolar P-channel power MOSFET in a **TO252** package, designed for medium to low voltage, high current applications. This MOSFET has a maximum drain-source voltage (VDS) of **-30V**, suitable for use in negative voltage environments. Its maximum drain current (ID) is **-40A**, and it can still maintain stable operation under high current load conditions, with a low on-resistance (RDS(ON)), which is **25mΩ @ VGS=4.5V** and **18mΩ @ VGS=10V**. Using **Trench** technology, this makes UTT36P03-VB excel in switching efficiency, power loss and thermal management. It is widely used in power management, battery protection, motor control and other high-power applications, especially in environments requiring high current and low power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -40A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
- **Model**: UTT36P03-VB
- **Package**: TO252
- **Configuration**: Unipolar P-channel
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -1.7V
- **RDS(ON)**:
- 25mΩ @ VGS=4.5V
- 18mΩ @ VGS=10V
- **ID (maximum drain current)**: -40A
- **Technology**: Trench
- **Maximum power loss**: Depending on the operating conditions, low RDS(ON) helps reduce power loss and improve system efficiency
- **Operating temperature range**: -55°C to +150°C
- **Features**: Low on-resistance, high current carrying capacity, suitable for high-efficiency power supply and load switching applications
Domain and module applications:
# 1. **Power management and DC-DC converter**
UTT36P03-VB is widely used in **DC-DC converter** and power management modules. Its low RDS(ON) characteristics enable it to effectively reduce power loss in power conversion and improve the overall efficiency of the system. Since its maximum drain-source voltage is -30V, it is suitable for use as an efficient switch in battery-powered systems, power battery panels, battery chargers and power regulators, and can provide stable power output.
Summary
**UTT36P03-VB** MOSFET, as a P-channel power switch with low on-resistance and high current carrying capacity, is suitable for power management, battery management, motor control, load switching and other fields. Its excellent switching characteristics and efficient power conversion capabilities enable it to perform well in various applications, especially for occasions requiring high current, high efficiency and low power loss.
Technical support:
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