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UTT30N10L-TN3-T-VB Product details
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Product Introduction
**UTT30N10L-TN3-T-VB** is a high-performance N-Channel MOSFET in TO252 package with excellent current carrying capacity and low on-resistance, designed for medium to high power applications. The maximum drain-source voltage (VDS) of this MOSFET is 100V, the maximum gate-source voltage (VGS) is ±20V, and the turn-on voltage (Vth) is 1.8V, ensuring stable operation in a wide range of power and power control systems. Its on-resistance (RDS(ON)) is 35mΩ at VGS=4.5V and 30mΩ at VGS=10V, which can effectively reduce power loss, provide higher energy efficiency and lower heat generation.
The maximum drain current (ID) is 40A, which enables it to handle larger current loads and is suitable for applications such as high-efficiency power management, power conversion and load switching. The on-resistance is further optimized using Trench technology, ensuring efficient current transfer and lower power loss. This MOSFET is ideal for high current power control, load switching and high power switching applications.
**UTT30N10L-TN3-T-VB** is a high-performance N-Channel MOSFET in TO252 package with excellent current carrying capacity and low on-resistance, designed for medium to high power applications. The maximum drain-source voltage (VDS) of this MOSFET is 100V, the maximum gate-source voltage (VGS) is ±20V, and the turn-on voltage (Vth) is 1.8V, ensuring stable operation in a wide range of power and power control systems. Its on-resistance (RDS(ON)) is 35mΩ at VGS=4.5V and 30mΩ at VGS=10V, which can effectively reduce power loss, provide higher energy efficiency and lower heat generation.
The maximum drain current (ID) is 40A, which enables it to handle larger current loads and is suitable for applications such as high-efficiency power management, power conversion and load switching. The on-resistance is further optimized using Trench technology, ensuring efficient current transfer and lower power loss. This MOSFET is ideal for high current power control, load switching and high power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throw-through voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
This MOSFET offers low on-resistance and high current carrying capability, making it ideal for power management, electric drive and load switching circuits that require high efficiency and reliability. Low RDS(ON) and high current carrying capability ensure excellent performance in high power applications, effectively reducing power losses and heat build-up.
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throw-through voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
This MOSFET offers low on-resistance and high current carrying capability, making it ideal for power management, electric drive and load switching circuits that require high efficiency and reliability. Low RDS(ON) and high current carrying capability ensure excellent performance in high power applications, effectively reducing power losses and heat build-up.
Domain and module applications：
Application fields and module examples
1. **Power management and power conversion**:
**UTT30N10L-TN3-T-VB** is suitable for power management and power conversion circuits, especially in DC-DC converters and switching power supplies that require high efficiency and low power loss. In these power modules, MOSFET acts as a key switching element. Its low on-resistance and high current carrying capacity can significantly improve conversion efficiency and reduce losses, optimizing the overall performance of the power system.
2. **Load switching and current control**:
This MOSFET is suitable for high-current load switching applications, especially in situations requiring high current control, such as battery management, power tools, electric vehicles, motor control, etc. Since it can handle a maximum current of 40A, UTT30N10L-TN3-T-VB can provide stable current control and efficient current transmission in the switching circuits of multiple high-power loads.
3. **Battery Management System (BMS)**:
In the battery management system, UTT30N10L-TN3-T-VB can be used for battery charge and discharge control, overcurrent protection and battery balancing. Due to its high current carrying capacity of 40A and low RDS(ON), it is very suitable for high-efficiency battery management systems such as electric vehicles (EVs) and electric bicycles (e-bikes), ensuring efficient charging and discharging and long-term reliability of the battery.
4. **Electric Drive System**:
This MOSFET is also widely used in electric drive systems, especially in electric drive systems such as power tools, electric vehicles, and electric bicycles. It can effectively control the current flow of the motor and provide efficient electric drive control. Its high current carrying capacity enables it to drive high-power motors, ensuring efficient operation of the electric system under high loads, reducing energy loss and heat generation.
5. **Automotive Electronics**:
In the field of automotive electronics, UTT30N10L-TN3-T-VB can be used as a switching element in systems such as on-board power management, automotive electric power steering systems (EPS), and on-board chargers (OBC). Its high current carrying capacity and low on-resistance make it an ideal power controller in automotive electronic systems, especially for efficient battery management and electric drive systems.
6. **Industrial and Consumer Electronics**:
This MOSFET is also suitable for industrial power control and consumer electronics such as power amplifiers, motor drivers, wireless communication equipment, etc. In industrial automation and consumer electronics, UTT30N10L-TN3-T-VB can provide efficient current control to ensure the stability and efficiency of the power system. Especially in applications that require high current handling and low power loss, it can significantly improve the performance and reliability of the system.
1. **Power management and power conversion**:
**UTT30N10L-TN3-T-VB** is suitable for power management and power conversion circuits, especially in DC-DC converters and switching power supplies that require high efficiency and low power loss. In these power modules, MOSFET acts as a key switching element. Its low on-resistance and high current carrying capacity can significantly improve conversion efficiency and reduce losses, optimizing the overall performance of the power system.
2. **Load switching and current control**:
This MOSFET is suitable for high-current load switching applications, especially in situations requiring high current control, such as battery management, power tools, electric vehicles, motor control, etc. Since it can handle a maximum current of 40A, UTT30N10L-TN3-T-VB can provide stable current control and efficient current transmission in the switching circuits of multiple high-power loads.
3. **Battery Management System (BMS)**:
In the battery management system, UTT30N10L-TN3-T-VB can be used for battery charge and discharge control, overcurrent protection and battery balancing. Due to its high current carrying capacity of 40A and low RDS(ON), it is very suitable for high-efficiency battery management systems such as electric vehicles (EVs) and electric bicycles (e-bikes), ensuring efficient charging and discharging and long-term reliability of the battery.
4. **Electric Drive System**:
This MOSFET is also widely used in electric drive systems, especially in electric drive systems such as power tools, electric vehicles, and electric bicycles. It can effectively control the current flow of the motor and provide efficient electric drive control. Its high current carrying capacity enables it to drive high-power motors, ensuring efficient operation of the electric system under high loads, reducing energy loss and heat generation.
5. **Automotive Electronics**:
In the field of automotive electronics, UTT30N10L-TN3-T-VB can be used as a switching element in systems such as on-board power management, automotive electric power steering systems (EPS), and on-board chargers (OBC). Its high current carrying capacity and low on-resistance make it an ideal power controller in automotive electronic systems, especially for efficient battery management and electric drive systems.
6. **Industrial and Consumer Electronics**:
This MOSFET is also suitable for industrial power control and consumer electronics such as power amplifiers, motor drivers, wireless communication equipment, etc. In industrial automation and consumer electronics, UTT30N10L-TN3-T-VB can provide efficient current control to ensure the stability and efficiency of the power system. Especially in applications that require high current handling and low power loss, it can significantly improve the performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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