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UTT30N10L-TN3-R-VB Product details
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1. Product Introduction - UTT30N10L-TN3-R-VB
**UTT30N10L-TN3-R-VB** is a **single N-channel MOSFET** in **TO252 package**, which is designed for high-efficiency power control in high-voltage and high-current applications. The product has a **100V drain-source voltage (VDS)**, which is very suitable for power management and switching applications in the medium to high voltage range. This MOSFET adopts **Trench technology**, which can effectively reduce the on-resistance (RDS(ON)), improve switching efficiency and system performance.
**UTT30N10L-TN3-R-VB**'s **RDS(ON)** is 30mΩ** at **VGS=10V** and 35mΩ** at **VGS=4.5V**. This low resistance value effectively reduces power loss and heat generation. The device's **maximum drain current** can reach **40A**, which is suitable for applications that require high current handling and high voltage tolerance, with excellent load capacity and efficient switching performance.
This product is widely used in **DC-DC converters**, **motor drive systems**, **battery management systems (BMS)**, **power management systems** and other fields to help improve the efficiency and reliability of the overall system.
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**UTT30N10L-TN3-R-VB** is a **single N-channel MOSFET** in **TO252 package**, which is designed for high-efficiency power control in high-voltage and high-current applications. The product has a **100V drain-source voltage (VDS)**, which is very suitable for power management and switching applications in the medium to high voltage range. This MOSFET adopts **Trench technology**, which can effectively reduce the on-resistance (RDS(ON)), improve switching efficiency and system performance.
**UTT30N10L-TN3-R-VB**'s **RDS(ON)** is 30mΩ** at **VGS=10V** and 35mΩ** at **VGS=4.5V**. This low resistance value effectively reduces power loss and heat generation. The device's **maximum drain current** can reach **40A**, which is suitable for applications that require high current handling and high voltage tolerance, with excellent load capacity and efficient switching performance.
This product is widely used in **DC-DC converters**, **motor drive systems**, **battery management systems (BMS)**, **power management systems** and other fields to help improve the efficiency and reliability of the overall system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
| **Parameter** | **Description** |
| ---------------------- | -------------------------------------------- |
| **Model** | UTT30N10L-TN3-R-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel MOSFET |
| **VDS (drain-source voltage)** | 100V |
| **VGS (gate-source voltage)** | ±20V |
| **Vth (gate-source threshold voltage)** | 1.8V |
| **RDS(ON)** | 35mΩ @ VGS = 4.5V |
| | 30mΩ @ VGS = 10V |
| **ID (drain current)** | 40A |
| **Maximum power** | About 400W (depending on current and voltage) |
| **Technology** | Trench Technology |
| **Operating Temperature Range** | -55°C to +150°C |
- **VDS (drain-source voltage)**: **100V**, suitable for medium to high voltage power switch applications.
- **VGS (gate-source voltage)**: **±20V**, compatible with common gate drive circuits.
- **Vth (gate-source threshold voltage)**: **1.8V**, suitable for conventional switching applications, ensuring stable switching performance.
- **RDS(ON)**: **35mΩ** @ VGS = 4.5V, **30mΩ** @ VGS = 10V, low on-resistance effectively reduces power loss.
- **ID (drain current)**: **40A**, suitable for high current load control.
- **Technology**: Adopt **Trench technology** to improve switching speed and conduction performance and reduce switching loss.
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| **Parameter** | **Description** |
| ---------------------- | -------------------------------------------- |
| **Model** | UTT30N10L-TN3-R-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel MOSFET |
| **VDS (drain-source voltage)** | 100V |
| **VGS (gate-source voltage)** | ±20V |
| **Vth (gate-source threshold voltage)** | 1.8V |
| **RDS(ON)** | 35mΩ @ VGS = 4.5V |
| | 30mΩ @ VGS = 10V |
| **ID (drain current)** | 40A |
| **Maximum power** | About 400W (depending on current and voltage) |
| **Technology** | Trench Technology |
| **Operating Temperature Range** | -55°C to +150°C |
- **VDS (drain-source voltage)**: **100V**, suitable for medium to high voltage power switch applications.
- **VGS (gate-source voltage)**: **±20V**, compatible with common gate drive circuits.
- **Vth (gate-source threshold voltage)**: **1.8V**, suitable for conventional switching applications, ensuring stable switching performance.
- **RDS(ON)**: **35mΩ** @ VGS = 4.5V, **30mΩ** @ VGS = 10V, low on-resistance effectively reduces power loss.
- **ID (drain current)**: **40A**, suitable for high current load control.
- **Technology**: Adopt **Trench technology** to improve switching speed and conduction performance and reduce switching loss.
---
Domain and module applications：
3. Application fields and module examples
# **1. DC-DC converter**
**UTT30N10L-TN3-R-VB** is suitable for **DC-DC converter**, especially **Buck converter** and **Boost converter** that require high efficiency and low power consumption. Its **low RDS(ON)** and **high drain current capability** can significantly improve voltage conversion efficiency and reduce power loss. It is widely used in **power adapter**, **battery management system**, and **embedded power module**.
# **6. Photovoltaic inverter**
In **photovoltaic inverter**, **UTT30N10L-TN3-R-VB** can be used as a switching element to convert DC power into AC power. Due to its **low on-resistance** and **high current carrying capacity**, it can provide efficient power conversion in photovoltaic power generation systems. Applicable to **solar inverters** and **off-grid power systems**, ensuring efficient and stable solar power generation and power output.
**Summary**
**UTT30N10L-TN3-R-VB** is an excellent **single N-channel MOSFET** with **low on-resistance** and **high current capability**, suitable for various high-efficiency power systems, **motor drives**, **battery management**, **photovoltaic inverters** and **automotive power systems**. With its **Trench technology**, it can provide reliable performance in high-efficiency switching applications, reduce power loss and heat generation, and is an indispensable key component in modern power electronics systems.
# **1. DC-DC converter**
**UTT30N10L-TN3-R-VB** is suitable for **DC-DC converter**, especially **Buck converter** and **Boost converter** that require high efficiency and low power consumption. Its **low RDS(ON)** and **high drain current capability** can significantly improve voltage conversion efficiency and reduce power loss. It is widely used in **power adapter**, **battery management system**, and **embedded power module**.
# **6. Photovoltaic inverter**
In **photovoltaic inverter**, **UTT30N10L-TN3-R-VB** can be used as a switching element to convert DC power into AC power. Due to its **low on-resistance** and **high current carrying capacity**, it can provide efficient power conversion in photovoltaic power generation systems. Applicable to **solar inverters** and **off-grid power systems**, ensuring efficient and stable solar power generation and power output.
**Summary**
**UTT30N10L-TN3-R-VB** is an excellent **single N-channel MOSFET** with **low on-resistance** and **high current capability**, suitable for various high-efficiency power systems, **motor drives**, **battery management**, **photovoltaic inverters** and **automotive power systems**. With its **Trench technology**, it can provide reliable performance in high-efficiency switching applications, reduce power loss and heat generation, and is an indispensable key component in modern power electronics systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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