UTT25P10G-TN3-R-VB Product details
Product introduction:
**UTT25P10G-TN3-R-VB** is a high-performance P-channel power MOSFET in TO252 package, designed for medium to high power applications requiring negative voltage control. The maximum drain-source voltage (VDS) of this MOSFET is -100V, the gate threshold voltage (Vth) is -2V, the on-resistance (RDS(ON)) is 120mΩ @ VGS=4.5V and 100mΩ @ VGS=10V, and the maximum drain current (ID) is -16A. It uses Trench technology and can play an important role in applications such as high-efficiency power management, battery management, load switching, etc. It has lower power loss and higher switching efficiency, and is suitable for various electronic and power control systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
- **Model**: UTT25P10G-TN3-R-VB
- **Package type**: TO252
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (VDS)**: -100V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 120mΩ @ VGS=4.5V
- 100mΩ @ VGS=10V
- **Maximum drain current (ID)**: -16A
- **Technology**: Trench technology
- **Maximum power dissipation**: 30W (depending on heat dissipation conditions)
- **Junction temperature range**: -55°C to +150°C
- **Features**:
- Low on-resistance (RDS(ON))
- High current carrying capability (16A)
- Efficient Trench technology
- Suitable for high power load switching applications
- Supports fast switching for efficient power management
Domain and module applications:
1. **Power management system**
**UTT25P10G-TN3-R-VB** is used as a power switch in power management systems, especially in applications such as DC-DC converters and switch mode power supplies (SMPS). Its low on-resistance and high current carrying capacity make it an ideal choice for efficient power systems, which can effectively reduce energy losses and improve system efficiency.
2. **Load switch**
Due to its low on-resistance and high current capability, UTT25P10G-TN3-R-VB is very suitable for load switching applications. It can switch loads quickly and is particularly suitable for high-power load switching occasions such as power tools, battery-driven systems, industrial equipment, etc. In these areas, it can provide reliable power control to ensure efficient operation of the system.
3. **Battery management system**
This MOSFET is used as a power switch in the battery management system (BMS) to regulate the charging and discharging process of the battery. Through its low RDS(ON) and high current carrying capacity, UTT25P10G-TN3-R-VB helps improve the efficiency of charging and discharging and reduce the energy loss of the system. It is particularly suitable for battery management systems in power tools, electric bicycles, mobile devices and other fields.
4. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In electric vehicles and hybrid electric vehicles, UTT25P10G-TN3-R-VB can be used as a power switch to regulate the charging and discharging process of the battery and control the current and voltage of the inverter. Due to its high efficiency and high current carrying capacity, this MOSFET has important applications in battery management and electric drive systems of electric vehicles, ensuring efficient use of batteries and stability of the system.
5. **LED Driver Power Supply**
In LED driver power supply, UTT25P10G-TN3-R-VB acts as a high-efficiency power switch to regulate the driving current of the LED. Due to its low RDS(ON) and high switching efficiency, it can effectively reduce energy loss in power conversion, and is suitable for high-power LED lighting systems and large-scale LED display modules, improving the power efficiency of the overall system.
6. **Consumer electronics and home appliances**
In consumer electronics and home appliances, UTT25P10G-TN3-R-VB can be used in power management modules to provide reliable current control and fast switching functions. For example, in power tools, kitchen appliances and other equipment, by controlling the connection between the battery and the power supply, it helps these products achieve efficient power management and extend their service life.
7. **Industrial control and automation**
This MOSFET can be used in power switches and power management modules in the field of industrial control and automation, and is suitable for use in applications that require high power and high current switching. Especially in high-power occasions such as automation equipment, motor drive control systems, and robot control, it provides stable current control to ensure fast response and reliability of the system.
8. **Communication power module**
In the communication system, UTT25P10G-TN3-R-VB can be used as a power switch for communication equipment to ensure the stability and efficiency of power supply. It can be used in the power management of communication base stations, supports load switching, and can provide stable power supply in the case of fluctuations in power demand to ensure the continuous normal operation of the equipment.
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