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UTT25N08G-TN3-R-VB Product details
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Product Introduction
**UTT25N08G-TN3-R-VB** is a high-performance N-Channel MOSFET in TO252 package with excellent current carrying capacity and low on-resistance, suitable for medium and high power switching circuits. The maximum drain-source voltage (VDS) of this MOSFET is 100V, the maximum gate-source voltage (VGS) is ±20V, and the turn-on voltage (Vth) is 1.8V, ensuring stable operation in a variety of power supply and power control circuits. The on-resistance (RDS(ON)) is 114mΩ at VGS=10V, providing lower conduction loss and higher current conduction efficiency.
The maximum drain current (ID) is 15A, making it suitable for high current load control and power switching applications. Trench technology is used to optimize the on-resistance to ensure that power loss can be significantly reduced and system efficiency can be improved during current conversion. This MOSFET is suitable for power management, electric drive, load switching and various high-efficiency power conversion circuits. It is an ideal choice for high-efficiency power modules and power conversion applications.
**UTT25N08G-TN3-R-VB** is a high-performance N-Channel MOSFET in TO252 package with excellent current carrying capacity and low on-resistance, suitable for medium and high power switching circuits. The maximum drain-source voltage (VDS) of this MOSFET is 100V, the maximum gate-source voltage (VGS) is ±20V, and the turn-on voltage (Vth) is 1.8V, ensuring stable operation in a variety of power supply and power control circuits. The on-resistance (RDS(ON)) is 114mΩ at VGS=10V, providing lower conduction loss and higher current conduction efficiency.
The maximum drain current (ID) is 15A, making it suitable for high current load control and power switching applications. Trench technology is used to optimize the on-resistance to ensure that power loss can be significantly reduced and system efficiency can be improved during current conversion. This MOSFET is suitable for power management, electric drive, load switching and various high-efficiency power conversion circuits. It is an ideal choice for high-efficiency power modules and power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throw voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
The low on-resistance and high current carrying capability of this MOSFET make it particularly suitable for power control, electric drive and power management systems that require high efficiency and high reliability. In high voltage and high current load applications, UTT25N08G-TN3-R-VB can provide excellent current conversion and high efficiency performance.
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throw voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
The low on-resistance and high current carrying capability of this MOSFET make it particularly suitable for power control, electric drive and power management systems that require high efficiency and high reliability. In high voltage and high current load applications, UTT25N08G-TN3-R-VB can provide excellent current conversion and high efficiency performance.
Domain and module applications：
Applications and module examples: 1. **Power management and power conversion**: UTT25N08G-TN3-R-VB is suitable for power management and power conversion circuits such as DC-DC converters and switching power supplies. In these applications, MOSFETs are used as switching elements to improve the efficiency of the entire power system through efficient power conversion and low conduction losses. The low RDS(ON) value of this MOSFET enables it to provide efficient power conversion in high-power power modules, reduce energy losses, and increase power density. 2. **Load switching and current control**: UTT25N08G-TN3-R-VB performs well in load switching and current control applications, especially in situations where medium to high currents need to be carried. Its maximum current carrying capacity of 15A and low on-resistance make it an ideal choice for battery management, power tools, electric vehicles, and electric drive systems. Through efficient switching control, it can reduce power losses and ensure efficient and stable load operation.
3. **Battery Management System (BMS)**:
In the battery management system, UTT25N08G-TN3-R-VB is suitable for battery charge and discharge control, protection circuits and battery balancing. Due to its low RDS(ON) and high current carrying capacity, it can efficiently handle the current control of the battery pack and reduce power loss. Especially in electric vehicles, solar energy storage systems and high-efficiency energy storage devices, it can optimize the charging and discharging process, improve the cycle life of the battery and the efficiency of the overall system.
4. **Electric Drive System**:
UTT25N08G-TN3-R-VB can be used as a switch control element in electric drive systems, especially in applications such as power tools, electric bicycles, and electric vehicles. In these high-power electric drive systems, MOSFETs can efficiently control the flow of current, thereby improving the overall performance and efficiency of the system. The 15A drain current capability enables it to drive higher power motors, and the low on-resistance ensures low power loss.
5. **Automotive electronics**:
In the field of automotive electronics, UTT25N08G-TN3-R-VB can be used for on-board power management, automotive electric power steering systems (EPS), and on-board chargers (OBC). Its high voltage capability and excellent current carrying capacity enable it to provide stable and reliable power conversion and current control in these electric systems. Low RDS(ON) and high current capability enable it to ensure efficient energy transmission in the on-board power system.
6. **Industrial power control**:
UTT25N08G-TN3-R-VB is also suitable for industrial power control systems such as power amplifiers, industrial motor control, and power conversion equipment. Its high current capability and low on-resistance enable it to handle high-power loads and efficiently control motors, especially in industrial automation and intelligent manufacturing, to ensure efficient operation and stability of the power system.
3. **Battery Management System (BMS)**:
In the battery management system, UTT25N08G-TN3-R-VB is suitable for battery charge and discharge control, protection circuits and battery balancing. Due to its low RDS(ON) and high current carrying capacity, it can efficiently handle the current control of the battery pack and reduce power loss. Especially in electric vehicles, solar energy storage systems and high-efficiency energy storage devices, it can optimize the charging and discharging process, improve the cycle life of the battery and the efficiency of the overall system.
4. **Electric Drive System**:
UTT25N08G-TN3-R-VB can be used as a switch control element in electric drive systems, especially in applications such as power tools, electric bicycles, and electric vehicles. In these high-power electric drive systems, MOSFETs can efficiently control the flow of current, thereby improving the overall performance and efficiency of the system. The 15A drain current capability enables it to drive higher power motors, and the low on-resistance ensures low power loss.
5. **Automotive electronics**:
In the field of automotive electronics, UTT25N08G-TN3-R-VB can be used for on-board power management, automotive electric power steering systems (EPS), and on-board chargers (OBC). Its high voltage capability and excellent current carrying capacity enable it to provide stable and reliable power conversion and current control in these electric systems. Low RDS(ON) and high current capability enable it to ensure efficient energy transmission in the on-board power system.
6. **Industrial power control**:
UTT25N08G-TN3-R-VB is also suitable for industrial power control systems such as power amplifiers, industrial motor control, and power conversion equipment. Its high current capability and low on-resistance enable it to handle high-power loads and efficiently control motors, especially in industrial automation and intelligent manufacturing, to ensure efficient operation and stability of the power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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