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UTT200N03-VB Product details

Product introduction:

UTT200N03-VB MOSFET Product Introduction

**UTT200N03-VB** is a high-performance single N-channel MOSFET in a **TO220** package, designed for high current, high power applications. It has an ultra-low on-resistance (RDS(ON)), which enables high-efficiency current switching and significantly reduces system power losses. This MOSFET has a maximum drain-source voltage of **30V** and a maximum drain current of **260A**, giving it excellent performance in high load current and low voltage situations. **UTT200N03-VB** uses advanced **Trench technology** to further improve its switching efficiency, thermal performance and current handling capabilities. This product is widely used in high-efficiency power management, battery management and high current drive systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 30V 1.7V 260A 1mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 30V 1.7V 260A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 30V 1.7V 260A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Package type**: TO220
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 2.2mΩ @ VGS = 4.5V
- 1mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 260A
- **Technology type**: Trench technology
- **Maximum power consumption (Pd)**: Suitable for high power applications (please refer to the specific application requirements for specific power consumption)

Domain and module applications:

Applications and module examples

**1. High-Efficiency Power Management**
Due to its extremely low on-resistance, the **UTT200N03-VB** MOSFET can provide excellent efficiency in power management systems, especially in applications such as DC-DC converters, power adapters, and UPS power supplies. In these applications, it can support high-power loads with lower power losses and improve overall system efficiency.

**2. Battery Management Systems**
In battery management systems, **UTT200N03-VB** can be used to control the charging and discharging process of the battery. The low RDS(ON) characteristics ensure efficient energy transfer during battery management, reduce heat generation, and improve system reliability and efficiency. Especially in electric vehicles and energy storage systems, it can effectively manage battery charging and discharging and extend battery life.

**3. Power Tools and Electric Power Equipment**
In power tools, electric toys and power equipment, **UTT200N03-VB** MOSFET can be used in high current drive circuits, such as electric motor drive, load control, etc. Its high current carrying capacity (maximum 260A) enables it to work stably under high load conditions, effectively reducing system losses and improving equipment performance.

**4. Electric Vehicles and Battery-Driven Systems**
For battery-driven systems such as electric vehicles, electric bicycles, and drones, **UTT200N03-VB** MOSFET has high current carrying capacity and low on-resistance, and can provide reliable solutions for applications such as battery management, power conversion, and motor control. It can handle high current, low voltage applications, ensuring efficient and stable operation of the system.

**5. High-Frequency Power Conversion**
In applications that require high-frequency switching, such as high-frequency DC-DC converters, switching power supplies, and converters, the **UTT200N03-VB** MOSFET can provide excellent performance. Its ultra-low on-resistance and fast switching capability make it very suitable for the field of high-frequency power conversion, which can effectively reduce switching losses and improve conversion efficiency.

**6. Solar Inverters**
In solar inverters and energy storage systems, the **UTT200N03-VB** MOSFET is used to achieve efficient power conversion. Its high current handling capability and low loss characteristics enable it to effectively control power conversion in solar photovoltaic systems, reduce energy losses during the inversion process, and improve overall system performance.

**7. Industrial Automation**
**UTT200N03-VB** MOSFET is widely used in industrial automation control systems, especially in motor drive and current regulation systems. Its low RDS(ON) characteristics enable it to drive motors and loads with lower power loss, ensuring stable system operation, and is suitable for factory automation, power drive systems and other occasions.

**8. Vehicle Charging Systems**
In electric vehicle charging systems, **UTT200N03-VB** MOSFET can be used for efficient power conversion and load control to ensure the stability and safety of the charging process. Its high current carrying capacity enables it to efficiently handle large currents in fast charging systems, improve charging efficiency and reduce system heat loss.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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