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UTT18P06L-TN3-T-VB Product details
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1. Product Introduction
**UTT18P06L-TN3-T-VB** is a unipolar P-channel power MOSFET in a **TO252** package, designed for medium and low voltage, high current applications. Its maximum drain-source voltage (VDS) is **-60V**, suitable for operation in a negative voltage environment. This MOSFET uses **Trench** technology, has excellent switching performance and low on-resistance (RDS(ON)), and is particularly suitable for high-efficiency power management, battery protection, motor control and other high-power applications. Its maximum drain current (ID) is **-35A**, and it has a lower RDS(ON) value (**58mΩ@VGS=4.5V** and **46mΩ@VGS=10V**), which enables it to effectively reduce power loss and improve system efficiency when driving a load.
**UTT18P06L-TN3-T-VB** is a unipolar P-channel power MOSFET in a **TO252** package, designed for medium and low voltage, high current applications. Its maximum drain-source voltage (VDS) is **-60V**, suitable for operation in a negative voltage environment. This MOSFET uses **Trench** technology, has excellent switching performance and low on-resistance (RDS(ON)), and is particularly suitable for high-efficiency power management, battery protection, motor control and other high-power applications. Its maximum drain current (ID) is **-35A**, and it has a lower RDS(ON) value (**58mΩ@VGS=4.5V** and **46mΩ@VGS=10V**), which enables it to effectively reduce power loss and improve system efficiency when driving a load.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | 46mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. Detailed parameter description
- **Model**: UTT18P06L-TN3-T-VB
- **Package**: TO252
- **Configuration**: Unipolar P-channel
- **VDS (drain-source voltage)**: -60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -1.7V
- **RDS(ON)**:
- 58mΩ @ VGS=4.5V
- 46mΩ @ VGS=10V
- **ID (maximum drain current)**: -35A
- **Technology**: Trench
- **Maximum power loss**: Depends on application conditions, generally lower RDS(ON) helps reduce power loss.
- **Operating temperature range**: -55°C to +150°C
- **Features**: Low RDS(ON), high current carrying capacity, suitable for high-performance switching applications.
- **Model**: UTT18P06L-TN3-T-VB
- **Package**: TO252
- **Configuration**: Unipolar P-channel
- **VDS (drain-source voltage)**: -60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -1.7V
- **RDS(ON)**:
- 58mΩ @ VGS=4.5V
- 46mΩ @ VGS=10V
- **ID (maximum drain current)**: -35A
- **Technology**: Trench
- **Maximum power loss**: Depends on application conditions, generally lower RDS(ON) helps reduce power loss.
- **Operating temperature range**: -55°C to +150°C
- **Features**: Low RDS(ON), high current carrying capacity, suitable for high-performance switching applications.
Domain and module applications：
3. Application fields and module examples
# 1. **Power management and DC-DC converter**
UTT18P06L-TN3-T-VB is widely used in **power management systems**, especially in **DC-DC converters** and voltage regulator modules. In these applications, it can act as an efficient power switch to help convert voltage and reduce power loss, improving the efficiency of the overall system. Its low RDS(ON) value and high current carrying capacity make it particularly suitable for high-efficiency power supply design, especially in applications requiring negative voltage.
Summary
**UTT18P06L-TN3-T-VB** MOSFET, as a low RDS(ON) P-channel power switch, is widely used in high-efficiency power management, battery management, motor control, load switching, and automotive electronics. Its high current handling capability and low power loss characteristics make it an ideal choice for a variety of electronic systems that require high efficiency and stable performance.
# 1. **Power management and DC-DC converter**
UTT18P06L-TN3-T-VB is widely used in **power management systems**, especially in **DC-DC converters** and voltage regulator modules. In these applications, it can act as an efficient power switch to help convert voltage and reduce power loss, improving the efficiency of the overall system. Its low RDS(ON) value and high current carrying capacity make it particularly suitable for high-efficiency power supply design, especially in applications requiring negative voltage.
Summary
**UTT18P06L-TN3-T-VB** MOSFET, as a low RDS(ON) P-channel power switch, is widely used in high-efficiency power management, battery management, motor control, load switching, and automotive electronics. Its high current handling capability and low power loss characteristics make it an ideal choice for a variety of electronic systems that require high efficiency and stable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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