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UTT16P10G-TN3-R-VB Product details
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Product Introduction:
**UTT16P10G-TN3-R-VB** is a single **P-Channel** MOSFET in **TO252** package, designed for high voltage and medium current applications. This MOSFET adopts **Trench technology**, which can provide lower on-resistance and is suitable for a variety of applications such as power management, load switching, and efficient power conversion. Its maximum drain-source voltage (VDS) is **-100V**, the maximum drain current (ID) is **-16A**, and the on-resistance (RDS(ON)) is **100mΩ @ VGS=10V**, ensuring low conduction loss and excellent current transfer capability. The threshold voltage (Vth) of this MOSFET is **-2V**, which enables it to start working at a lower gate voltage, suitable for battery-driven applications and systems requiring efficient switching control.
**UTT16P10G-TN3-R-VB** is a single **P-Channel** MOSFET in **TO252** package, designed for high voltage and medium current applications. This MOSFET adopts **Trench technology**, which can provide lower on-resistance and is suitable for a variety of applications such as power management, load switching, and efficient power conversion. Its maximum drain-source voltage (VDS) is **-100V**, the maximum drain current (ID) is **-16A**, and the on-resistance (RDS(ON)) is **100mΩ @ VGS=10V**, ensuring low conduction loss and excellent current transfer capability. The threshold voltage (Vth) of this MOSFET is **-2V**, which enables it to start working at a lower gate voltage, suitable for battery-driven applications and systems requiring efficient switching control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description:
- **Package type: ** TO252
- **Configuration: ** Single P-Channel
- **VDS (drain-source voltage): ** -100V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** -2V
- **RDS(ON) (on-resistance): **
- 120mΩ @ VGS = 4.5V
- 100mΩ @ VGS = 10V
- **ID (drain current): ** -16A
- **Technology: ** Trench (trench technology)
- **Maximum power consumption: ** 1.2W (depending on operating conditions)
- **Operating temperature range: ** -55°C to 150°C
- **Maximum drain-source voltage: ** -100V
- **Maximum gate-source voltage:** ±20V
- **Switching speed:** Fast switching, suitable for high frequency applications
- **Typical applications:** Power conversion, battery management, load switching, etc.
- **Package type: ** TO252
- **Configuration: ** Single P-Channel
- **VDS (drain-source voltage): ** -100V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** -2V
- **RDS(ON) (on-resistance): **
- 120mΩ @ VGS = 4.5V
- 100mΩ @ VGS = 10V
- **ID (drain current): ** -16A
- **Technology: ** Trench (trench technology)
- **Maximum power consumption: ** 1.2W (depending on operating conditions)
- **Operating temperature range: ** -55°C to 150°C
- **Maximum drain-source voltage: ** -100V
- **Maximum gate-source voltage:** ±20V
- **Switching speed:** Fast switching, suitable for high frequency applications
- **Typical applications:** Power conversion, battery management, load switching, etc.
Domain and module applications：
Applications and module examples:
1. **Power Management and DC-DC Converters: **
**UTT16P10G-TN3-R-VB** is a P-Channel MOSFET that is ideal for **power management systems** and **DC-DC converters**. Its low on-resistance and high withstand voltage enable it to provide excellent current transfer capability in medium voltage power systems (such as 12V to 100V). This MOSFET can efficiently regulate power in power converters, reduce energy losses, and improve the efficiency of the entire system. It is particularly suitable for high-efficiency power adapters, power tools, automotive power supplies, and communication power modules.
2. **Battery Management System (BMS): **
In the **Battery Management System** (BMS), **UTT16P10G-TN3-R-VB** provides efficient current control capabilities. This MOSFET can effectively manage current transfer during battery charging and discharging, helping to improve battery efficiency and life. Its **-100V** withstand voltage capability makes it suitable for battery management modules in electric vehicles, power tools and other medium-voltage battery-powered systems.
3. **Load switch control: **
As a **load switch**, **UTT16P10G-TN3-R-VB** can be widely used in various consumer electronics and industrial applications, such as home appliances, industrial equipment and communication equipment. The high efficiency of MOSFET in load control makes it an ideal choice, which can quickly and accurately control current switching, reduce switching losses, and ensure the stability and reliability of the system during operation.
4. **Motor drive and control: **
**UTT16P10G-TN3-R-VB** can be used in **motor drive systems**, especially in power tools, home appliances, industrial robots and other fields that require high current control, providing stable current transmission and efficient control. The high switching speed and low on-resistance of this MOSFET ensure smooth operation and low power loss of the motor during the start-stop process, improving the overall efficiency of the motor drive system.
5. **LED driver: **
As a key component in the **LED driver system**, **UTT16P10G-TN3-R-VB** provides efficient current control to ensure the stability and long life of LED lamps during use. Due to its low on-resistance and high voltage resistance, this MOSFET plays an important role in regulation in the power supply and is widely used in industrial lighting, commercial lighting, and various outdoor or high-efficiency lighting systems.
6. **Automotive applications: **
In **automotive electronics**, especially in power management, charging systems, battery monitoring and other modules of electric vehicles, **UTT16P10G-TN3-R-VB** can be used as an efficient switching element. Its **-100V** voltage resistance makes it very suitable for high-voltage systems in automotive electronics. It can efficiently handle current from batteries or motors to ensure the smooth operation of electric vehicle systems.
1. **Power Management and DC-DC Converters: **
**UTT16P10G-TN3-R-VB** is a P-Channel MOSFET that is ideal for **power management systems** and **DC-DC converters**. Its low on-resistance and high withstand voltage enable it to provide excellent current transfer capability in medium voltage power systems (such as 12V to 100V). This MOSFET can efficiently regulate power in power converters, reduce energy losses, and improve the efficiency of the entire system. It is particularly suitable for high-efficiency power adapters, power tools, automotive power supplies, and communication power modules.
2. **Battery Management System (BMS): **
In the **Battery Management System** (BMS), **UTT16P10G-TN3-R-VB** provides efficient current control capabilities. This MOSFET can effectively manage current transfer during battery charging and discharging, helping to improve battery efficiency and life. Its **-100V** withstand voltage capability makes it suitable for battery management modules in electric vehicles, power tools and other medium-voltage battery-powered systems.
3. **Load switch control: **
As a **load switch**, **UTT16P10G-TN3-R-VB** can be widely used in various consumer electronics and industrial applications, such as home appliances, industrial equipment and communication equipment. The high efficiency of MOSFET in load control makes it an ideal choice, which can quickly and accurately control current switching, reduce switching losses, and ensure the stability and reliability of the system during operation.
4. **Motor drive and control: **
**UTT16P10G-TN3-R-VB** can be used in **motor drive systems**, especially in power tools, home appliances, industrial robots and other fields that require high current control, providing stable current transmission and efficient control. The high switching speed and low on-resistance of this MOSFET ensure smooth operation and low power loss of the motor during the start-stop process, improving the overall efficiency of the motor drive system.
5. **LED driver: **
As a key component in the **LED driver system**, **UTT16P10G-TN3-R-VB** provides efficient current control to ensure the stability and long life of LED lamps during use. Due to its low on-resistance and high voltage resistance, this MOSFET plays an important role in regulation in the power supply and is widely used in industrial lighting, commercial lighting, and various outdoor or high-efficiency lighting systems.
6. **Automotive applications: **
In **automotive electronics**, especially in power management, charging systems, battery monitoring and other modules of electric vehicles, **UTT16P10G-TN3-R-VB** can be used as an efficient switching element. Its **-100V** voltage resistance makes it very suitable for high-voltage systems in automotive electronics. It can efficiently handle current from batteries or motors to ensure the smooth operation of electric vehicle systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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