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UTT15P06G-TN3-VB Product details

Product introduction:

**UTT15P06G-TN3-VB** is a **unipolar P-type MOSFET**, which adopts **TO252** package and is suitable for a variety of high-efficiency switching power supplies and load driving circuits. The maximum drain-source voltage (Vds) of this MOSFET is **-60V**, the gate-source voltage (Vgs) can reach **±20V**, and it has a threshold voltage (Vth) of **-1.7V**. Its on-resistance (Rds(on)) is **100mΩ** at **Vgs = 4.5V** and **90mΩ** at **Vgs = 10V**, respectively, which makes it have lower power loss and heat generation when handling larger currents. The maximum drain current (Id) of this MOSFET is **-30A**, which is very suitable for use in applications that require high current loads. The use of **Trench technology** further improves the conduction performance and thermal efficiency, making it have a wide range of application potential in high-efficiency power supplies, switch-mode power supplies and load driving.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -60V -1.7V -30A 100mΩ 90mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P

Detailed parameter description

- **Package type**: TO252
- **Configuration**: Unipolar P-type MOSFET
- **Drain-source voltage (Vds)**: -60V (max)
- **Gate-source voltage (Vgs)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (Rds(on))**:
- Rds(on) @ Vgs = 4.5V: 100mΩ
- Rds(on) @ Vgs = 10V: 90mΩ
- **Maximum drain current (Id)**: -30A
- **Technology type**: Trench technology

Domain and module applications:


Application fields and module examples

1. **Power management system**:
**UTT15P06G-TN3-VB** is very suitable for use in **DC-DC converters**, especially as **high-side switch** or **load switch**. Its low on-resistance and high current carrying capacity enable it to provide efficient power conversion in power management systems, reducing power consumption and improving power conversion efficiency. This MOSFET is particularly suitable for **industrial power systems**, **communication power** and **portable power equipment**.

2. **Electric Vehicles (EV)**:
In the **Battery Management System (BMS)** of **Electric Vehicles (EV)**, UTT15P06G-TN3-VB can be used as a **battery charging and discharging control switch**. Its low on-resistance and high current carrying capacity (30A) ensure high efficiency and battery temperature control during charging, optimizing the battery life and the endurance of electric vehicles.

3. **Power amplifier and audio power system**:
In **audio power amplifier** or **RF power amplifier**, UTT15P06G-TN3-VB can be used as a **high power switch** to efficiently transmit power signals. Its low Rds(on) characteristics enable it to provide stable power conversion in audio amplification and signal processing while reducing heat loss and energy waste in the system.

4. **LED drive circuit**:
This MOSFET can be used in **LED drive circuit** as a **power switch** to effectively drive a large number of LED light sources. Due to its low on-resistance and high current capability, it helps reduce energy loss and improve the overall efficiency of LED lighting systems, and is particularly suitable for **high power LED drive** systems.

5. **Power Tools and Appliances**:
In **power tools** or **power management for appliances**, the UTT15P06G-TN3-VB can also serve as a key power switch to handle high current loads. Its high current carrying capacity and high efficiency enable it to meet the power demands of these devices while reducing heat loss, thereby improving the stability and durability of the equipment.

6. **Solar Cells and Energy Storage Systems**:
In **solar panels** and **energy storage systems (ESS)**, the UTT15P06G-TN3-VB is suitable for controlling the conversion and storage of electrical energy. Due to its lower Rds(on) and higher current carrying capacity, it helps improve the energy efficiency of the system, and is particularly suitable for **power regulation** and **battery management** in solar systems.

7. **Computer power supply and switching power supply**:
In **computer power supply** or **switching power supply module**, UTT15P06G-TN3-VB can provide stable current management, especially in systems that require high efficiency and low power consumption. Its low Rds(on) and high current capacity provide an ideal solution for high-efficiency power systems, especially for miniaturized, high-efficiency power supply designs.

In summary, UTT15P06G-TN3-VB is an efficient and reliable P-type MOSFET that is widely used in **power management**, **energy conversion**, **load drive** and **battery management system**, and performs particularly well in high-power, high-efficiency applications.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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