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UTT15P06G-TN3-R-VB Product details
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**UTT15P06G-TN3-R-VB** is a high-performance P-Channel MOSFET using Trench technology, packaged in TO252, with high current carrying capacity and low on-resistance, designed for medium to high power applications. Its maximum drain-source voltage (VDS) is -60V, the maximum gate-source voltage (VGS) is ±20V, and the turn-on voltage (Vth) is -1.7V, ensuring efficient and stable operation in different power control systems. The on-resistance (RDS(ON)) of this MOSFET is 100mΩ at VGS=4.5V and 90mΩ at VGS=10V, providing low power loss and efficient current conduction capability.
The maximum drain current (ID) is -30A, making this MOSFET very suitable for high current load applications. Its Trench technology optimizes on-resistance, ensuring significant advantages in applications such as high-efficiency power management, switching power supplies and load switches. Its superior performance makes it an ideal choice for power conversion, battery management systems, automotive electronics and other high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single P-Channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throw-through voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = 4.5V
- 90mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -30A
- **Technology**: Trench
The low on-resistance of this MOSFET makes it excel in high-efficiency power conversion circuits and high current load switching. By adopting advanced Trench technology, UTT15P06G-TN3-R-VB provides extremely low conduction loss and can maintain excellent performance over a wide operating voltage range.
Domain and module applications：
Applications and module examples:
1. Power Management and Power Conversion: UTT15P06G-TN3-R-VB is ideal for medium to high power power conversion and power management systems. In these applications, MOSFETs are used as switching elements to provide efficient power conversion in various DC-DC converters and AC-DC converters. Their low on-resistance and high current carrying capacity make them the core components of efficient power modules, which can significantly reduce power losses during the conversion process.
2. Load Switching and Current Control: This MOSFET is suitable for high current load switching and current control circuits. UTT15P06G-TN3-R-VB has a low on-resistance and can operate efficiently under high current loads, reducing power losses. Therefore, it is widely used in applications such as battery management systems, portable electronic devices, power control circuits, etc. that require efficient switching. Its maximum current capability of 30A makes it very suitable for power tools, motor drives, and other load control applications.
3. **Battery Management System (BMS)**:
In the battery management system, UTT15P06G-TN3-R-VB can be used for battery charge and discharge control, protection circuits and battery balancing. Its low RDS(ON) and high current capability make it an ideal switching element in the battery management system. Especially in applications such as electric vehicles (EV) and electric bicycles (EBike), it can optimize the battery charge and discharge efficiency, ensure stable operation of the battery and extend its service life.
4. **Automotive Electronics**:
UTT15P06G-TN3-R-VB is also widely used in automotive electronic systems, especially in vehicle power management modules, electric power steering systems (EPS) and on-board chargers (OBC). Its high current carrying capacity and low power consumption characteristics enable it to provide stable and efficient current control in automotive electronic systems, ensuring the efficiency and safety of battery management and power conversion systems.
5. **Electric drive system**:
In electric drive systems, UTT15P06G-TN3-R-VB can be used as a switching control element for electric motors. Due to its 30A current carrying capacity and low on-resistance, it can efficiently control the current of the motor, thereby improving the efficiency and performance of the electric drive system. This MOSFET is suitable for drive systems that require high-power current switching, such as power tools, electric bicycles, and electric vehicles.
6. **Industrial and consumer electronics**:
This MOSFET can be widely used in industrial and consumer electronics, especially in scenarios that require efficient current switching, such as power amplifiers, motor drive systems, wireless communication equipment, and other fields. Its excellent conduction performance and reliability make it an ideal choice for these applications, especially in environments with high power demands and frequent switching.
In summary, **UTT15P06G-TN3-R-VB** is suitable for power management, battery management, automotive electronics, electric drive and high-power load switching due to its high current carrying capacity, low on-resistance and Trench technology. It provides excellent performance and reliability and can meet the needs of a variety of complex applications.
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