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UTT10N10L-TN3-T-VB Product details
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1. Product Introduction
**UTT10N10L-TN3-T-VB** is a unipolar N-channel power MOSFET in a **TO252** package, designed for high voltage applications. Its maximum drain-source voltage (VDS) is 100V, suitable for applications that require higher voltage carrying capacity. This MOSFET uses **Trench** technology and has excellent performance in high current and high efficiency applications. Its maximum drain current (ID) is 15A, and it has a low on-resistance (RDS(ON)) of 114mΩ@VGS=10V, which makes it excellent in power loss and thermal management. This type of MOSFET is widely used in power management, switching power supplies, DC-DC converters and other fields, and is suitable for electronic devices that require high efficiency and stable performance.
**UTT10N10L-TN3-T-VB** is a unipolar N-channel power MOSFET in a **TO252** package, designed for high voltage applications. Its maximum drain-source voltage (VDS) is 100V, suitable for applications that require higher voltage carrying capacity. This MOSFET uses **Trench** technology and has excellent performance in high current and high efficiency applications. Its maximum drain current (ID) is 15A, and it has a low on-resistance (RDS(ON)) of 114mΩ@VGS=10V, which makes it excellent in power loss and thermal management. This type of MOSFET is widely used in power management, switching power supplies, DC-DC converters and other fields, and is suitable for electronic devices that require high efficiency and stable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Model**: UTT10N10L-TN3-T-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 100V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.8V
- **RDS(ON)**:
- 114mΩ @ VGS=10V
- **ID (maximum drain current)**: 15A
- **Technology**: Trench
- **Maximum power loss**: Depends on operating conditions and environment, typically used in high efficiency applications to reduce power loss.
- **Operating temperature range**: -55°C to +150°C
- **Features**: Low RDS(ON), high voltage carrying capacity, fast switching.
- **Model**: UTT10N10L-TN3-T-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 100V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.8V
- **RDS(ON)**:
- 114mΩ @ VGS=10V
- **ID (maximum drain current)**: 15A
- **Technology**: Trench
- **Maximum power loss**: Depends on operating conditions and environment, typically used in high efficiency applications to reduce power loss.
- **Operating temperature range**: -55°C to +150°C
- **Features**: Low RDS(ON), high voltage carrying capacity, fast switching.
Domain and module applications：
3. Application fields and module examples
# 1. **DC-DC converter**
UTT10N10L-TN3-T-VB is suitable for DC-DC converters, especially in power supply applications that require higher voltages (up to 100V). In these applications, MOSFETs can be used as switching elements to regulate voltage and achieve efficient power conversion. Its low RDS(ON) characteristics reduce power losses during switching and improve system efficiency, making it particularly suitable for use in equipment such as battery management and power tools.
Summary
**UTT10N10L-TN3-T-VB** MOSFETs demonstrate excellent performance in high-voltage applications and are suitable for use in DC-DC converters, switching power supplies, battery management, motor drives, and automotive electronics. Its low RDS(ON) and high current handling capabilities make it an ideal choice for efficient power management and current control, and are widely used in various high-efficiency systems.
# 1. **DC-DC converter**
UTT10N10L-TN3-T-VB is suitable for DC-DC converters, especially in power supply applications that require higher voltages (up to 100V). In these applications, MOSFETs can be used as switching elements to regulate voltage and achieve efficient power conversion. Its low RDS(ON) characteristics reduce power losses during switching and improve system efficiency, making it particularly suitable for use in equipment such as battery management and power tools.
Summary
**UTT10N10L-TN3-T-VB** MOSFETs demonstrate excellent performance in high-voltage applications and are suitable for use in DC-DC converters, switching power supplies, battery management, motor drives, and automotive electronics. Its low RDS(ON) and high current handling capabilities make it an ideal choice for efficient power management and current control, and are widely used in various high-efficiency systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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