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UTT10N10G-TN3-R-VB Product details
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Product Introduction:
**UTT10N10G-TN3-R-VB** is a single **N-Channel** MOSFET in **TO252** package, designed for medium voltage and medium current applications. This MOSFET features **Trench technology**, which provides lower on-resistance and higher efficiency through an optimized trench structure, making it perform well in power management, load switching and other power conversion applications. Its maximum drain-source voltage (VDS) is 100V, the maximum drain current (ID) is 15A, and the on-resistance (RDS(ON)) is 114mΩ @ VGS=10V, ensuring good power transmission capability.
This MOSFET is suitable for various power conversion systems, especially in medium voltage environments. It can efficiently control current, has strong voltage resistance and low conduction loss, and can significantly improve the energy efficiency of electronic systems. It is widely used in various industrial and consumer electronic devices, especially in scenarios requiring high efficiency and medium current carrying capacity.
**UTT10N10G-TN3-R-VB** is a single **N-Channel** MOSFET in **TO252** package, designed for medium voltage and medium current applications. This MOSFET features **Trench technology**, which provides lower on-resistance and higher efficiency through an optimized trench structure, making it perform well in power management, load switching and other power conversion applications. Its maximum drain-source voltage (VDS) is 100V, the maximum drain current (ID) is 15A, and the on-resistance (RDS(ON)) is 114mΩ @ VGS=10V, ensuring good power transmission capability.
This MOSFET is suitable for various power conversion systems, especially in medium voltage environments. It can efficiently control current, has strong voltage resistance and low conduction loss, and can significantly improve the energy efficiency of electronic systems. It is widely used in various industrial and consumer electronic devices, especially in scenarios requiring high efficiency and medium current carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package type: ** TO252
- **Configuration: ** Single N-Channel
- **VDS (drain-source voltage): ** 100V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** 1.8V
- **RDS(ON) (on-resistance): **
- 114mΩ @ VGS = 10V
- **ID (drain current): ** 15A
- **Technology: ** Trench
- **Maximum power consumption: ** 1.5W (depending on operating conditions)
- **Operating temperature range: ** -55°C to 150°C
- **Maximum drain-source voltage: ** 100V
- **Maximum gate-source voltage: ** ±20V
- **Switching speed: ** Fast switching, suitable for high frequency applications
- **Typical applications:** Power conversion, battery management, load switching, etc.
- **Package type: ** TO252
- **Configuration: ** Single N-Channel
- **VDS (drain-source voltage): ** 100V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** 1.8V
- **RDS(ON) (on-resistance): **
- 114mΩ @ VGS = 10V
- **ID (drain current): ** 15A
- **Technology: ** Trench
- **Maximum power consumption: ** 1.5W (depending on operating conditions)
- **Operating temperature range: ** -55°C to 150°C
- **Maximum drain-source voltage: ** 100V
- **Maximum gate-source voltage: ** ±20V
- **Switching speed: ** Fast switching, suitable for high frequency applications
- **Typical applications:** Power conversion, battery management, load switching, etc.
Domain and module applications：
Application areas and module examples:
1. **Power management system: **
**UTT10N10G-TN3-R-VB** is widely used in **power management systems**, especially in power converters for medium voltage systems (such as 12V-100V). Due to its low on-resistance and high voltage tolerance, this MOSFET can provide efficient energy transfer and low power loss during power conversion. It is suitable for power management modules in medium voltage ranges such as switching power supplies (SMPS) and DC-DC converters.
2. **Load switch control: **
In situations where efficient current control is required, **UTT10N10G-TN3-R-VB** can be used as a **load switch**, such as home appliances, industrial control and communication equipment, to control the switching of load current. Its low on-resistance reduces energy loss during switching and improves the overall efficiency of the system. It is particularly suitable for battery-powered devices, portable electronic devices and power tools.
3. **Battery Management System:**
As a key component in the **Battery Management System** (BMS), **UTT10N10G-TN3-R-VB** provides efficient current control to ensure battery stability during charging and discharging. The high withstand voltage and fast switching characteristics of this MOSFET make it particularly suitable for electric vehicles, power tools, and other applications that require precise battery management. Its low on-resistance helps reduce battery loss and extend battery life.
4. **Motor Drive and Control:**
**UTT10N10G-TN3-R-VB** is also suitable for **motor drive systems**, such as power tools, home appliances, and other industrial motor applications. Due to its high withstand voltage capability and large current carrying capacity, it can provide stable current control during motor starting, operation, and speed regulation, reducing power loss and improving efficiency.
5. **Communication equipment and network modules: **
In **communication equipment** and **network modules**, **UTT10N10G-TN3-R-VB** can be used for power modules, DC-DC converters, and other power regulation modules. Due to its excellent current transmission capability and stability, it can maintain stable performance in communication equipment with high frequency and high efficiency requirements.
6. **LED drive system: **
In **LED drive system**, **UTT10N10G-TN3-R-VB** can be used to control the precise transmission of current, thereby ensuring the stable operation of LED lamps and extending their service life. The low on-resistance characteristic performs well in high-power applications and is suitable for many fields such as industrial lighting, architectural lighting, and automotive lighting.
1. **Power management system: **
**UTT10N10G-TN3-R-VB** is widely used in **power management systems**, especially in power converters for medium voltage systems (such as 12V-100V). Due to its low on-resistance and high voltage tolerance, this MOSFET can provide efficient energy transfer and low power loss during power conversion. It is suitable for power management modules in medium voltage ranges such as switching power supplies (SMPS) and DC-DC converters.
2. **Load switch control: **
In situations where efficient current control is required, **UTT10N10G-TN3-R-VB** can be used as a **load switch**, such as home appliances, industrial control and communication equipment, to control the switching of load current. Its low on-resistance reduces energy loss during switching and improves the overall efficiency of the system. It is particularly suitable for battery-powered devices, portable electronic devices and power tools.
3. **Battery Management System:**
As a key component in the **Battery Management System** (BMS), **UTT10N10G-TN3-R-VB** provides efficient current control to ensure battery stability during charging and discharging. The high withstand voltage and fast switching characteristics of this MOSFET make it particularly suitable for electric vehicles, power tools, and other applications that require precise battery management. Its low on-resistance helps reduce battery loss and extend battery life.
4. **Motor Drive and Control:**
**UTT10N10G-TN3-R-VB** is also suitable for **motor drive systems**, such as power tools, home appliances, and other industrial motor applications. Due to its high withstand voltage capability and large current carrying capacity, it can provide stable current control during motor starting, operation, and speed regulation, reducing power loss and improving efficiency.
5. **Communication equipment and network modules: **
In **communication equipment** and **network modules**, **UTT10N10G-TN3-R-VB** can be used for power modules, DC-DC converters, and other power regulation modules. Due to its excellent current transmission capability and stability, it can maintain stable performance in communication equipment with high frequency and high efficiency requirements.
6. **LED drive system: **
In **LED drive system**, **UTT10N10G-TN3-R-VB** can be used to control the precise transmission of current, thereby ensuring the stable operation of LED lamps and extending their service life. The low on-resistance characteristic performs well in high-power applications and is suitable for many fields such as industrial lighting, architectural lighting, and automotive lighting.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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