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UTF3055L-AE3-R-VB Product details
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Product Introduction
**UTF3055L-AE3-R-VB** is a **unipolar N-type MOSFET**, packaged in **SOT89** package, suitable for use in circuit designs with limited space and requiring high-efficiency performance. This MOSFET has a maximum drain-source voltage (Vds) of **60V** and a gate-source voltage (Vgs) of **±20V**, suitable for various power management and load switching applications. Its low on-resistance (Rds(on)) is **88mΩ** at **Vgs = 4.5V** and **76mΩ** at **Vgs = 10V**, making it excellent in high-efficiency circuits. With a threshold voltage (Vth) of **1.7V** and a maximum current carrying capacity of **5.5A**, it uses **Trench technology** to provide users with a low-power, high-efficiency switching solution, which is very suitable for applications requiring high current and high-frequency operation.
**UTF3055L-AE3-R-VB** is a **unipolar N-type MOSFET**, packaged in **SOT89** package, suitable for use in circuit designs with limited space and requiring high-efficiency performance. This MOSFET has a maximum drain-source voltage (Vds) of **60V** and a gate-source voltage (Vgs) of **±20V**, suitable for various power management and load switching applications. Its low on-resistance (Rds(on)) is **88mΩ** at **Vgs = 4.5V** and **76mΩ** at **Vgs = 10V**, making it excellent in high-efficiency circuits. With a threshold voltage (Vth) of **1.7V** and a maximum current carrying capacity of **5.5A**, it uses **Trench technology** to provide users with a low-power, high-efficiency switching solution, which is very suitable for applications requiring high current and high-frequency operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 60V | 1.7V | 5.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
Detailed parameter description
- **Package type**: SOT89
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (Vds)**: 60V (max)
- **Gate-source voltage (Vgs)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (Rds(on))**:
- Rds(on) @ Vgs = 4.5V: 88mΩ
- Rds(on) @ Vgs = 10V: 76mΩ
- **Maximum drain current (Id)**: 5.5A
- **Technology type**: Trench technology
- **Package type**: SOT89
- **Configuration**: Unipolar N-type MOSFET
- **Drain-source voltage (Vds)**: 60V (max)
- **Gate-source voltage (Vgs)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (Rds(on))**:
- Rds(on) @ Vgs = 4.5V: 88mΩ
- Rds(on) @ Vgs = 10V: 76mΩ
- **Maximum drain current (Id)**: 5.5A
- **Technology type**: Trench technology
Domain and module applications：
Application fields and module examples
1. **DC-DC converter**:
UTF3055L-AE3-R-VB is very suitable for **DC-DC converter**, especially as **high-side switch** or **low-side switch**. Its low on-resistance can effectively reduce the power consumption during the conversion process and improve energy efficiency. It is very suitable for power conversion systems that require high efficiency, such as **communication equipment** and **embedded systems**.
2. **Battery Management System (BMS)**:
In the **Battery Management System (BMS)**, UTF3055L-AE3-R-VB is suitable as a **battery protection switch** for current control during battery charging and discharging. Its higher current carrying capacity and lower on-resistance help improve the system's energy efficiency, reduce system heating, and extend battery life.
3. **LED drive circuit**:
UTF3055L-AE3-R-VB is also suitable for **LED drive circuit** as **power switch**. In LED lighting system, the efficiency of MOSFET directly affects the heat generation and energy consumption of the system. The low Rds(on) characteristic of UTF3055L-AE3-R-VB ensures lower power loss and better thermal management.
4. **Power tools and home appliances**:
This MOSFET can be used in **power tools** or **home appliances**, especially in load driving circuits that require efficient switching. Due to its low on-resistance, it can effectively control the current flow, reduce energy loss, and improve the efficiency of battery or power supply.
5. **Small Power Supply Modules**:
In some small systems that require small packages and efficient power conversion, such as **portable power** and **embedded devices**, the UTF3055L-AE3-R-VB can be used as an efficient switching element. Due to its moderate current capability and low power consumption, it is able to provide excellent performance in a compact design space.
6. **Communication Equipment**:
In **communication equipment**, the UTF3055L-AE3-R-VB can also be used as a switching device to optimize **signal processing circuits** and **power circuits**. It can effectively improve system stability and power efficiency, especially in high-speed switching operations.
Through these applications, the UTF3055L-AE3-R-VB MOSFET can provide efficient and stable current control in multiple fields, ensuring excellent performance of the system under high frequency, low power consumption, and long-term operation.
1. **DC-DC converter**:
UTF3055L-AE3-R-VB is very suitable for **DC-DC converter**, especially as **high-side switch** or **low-side switch**. Its low on-resistance can effectively reduce the power consumption during the conversion process and improve energy efficiency. It is very suitable for power conversion systems that require high efficiency, such as **communication equipment** and **embedded systems**.
2. **Battery Management System (BMS)**:
In the **Battery Management System (BMS)**, UTF3055L-AE3-R-VB is suitable as a **battery protection switch** for current control during battery charging and discharging. Its higher current carrying capacity and lower on-resistance help improve the system's energy efficiency, reduce system heating, and extend battery life.
3. **LED drive circuit**:
UTF3055L-AE3-R-VB is also suitable for **LED drive circuit** as **power switch**. In LED lighting system, the efficiency of MOSFET directly affects the heat generation and energy consumption of the system. The low Rds(on) characteristic of UTF3055L-AE3-R-VB ensures lower power loss and better thermal management.
4. **Power tools and home appliances**:
This MOSFET can be used in **power tools** or **home appliances**, especially in load driving circuits that require efficient switching. Due to its low on-resistance, it can effectively control the current flow, reduce energy loss, and improve the efficiency of battery or power supply.
5. **Small Power Supply Modules**:
In some small systems that require small packages and efficient power conversion, such as **portable power** and **embedded devices**, the UTF3055L-AE3-R-VB can be used as an efficient switching element. Due to its moderate current capability and low power consumption, it is able to provide excellent performance in a compact design space.
6. **Communication Equipment**:
In **communication equipment**, the UTF3055L-AE3-R-VB can also be used as a switching device to optimize **signal processing circuits** and **power circuits**. It can effectively improve system stability and power efficiency, especially in high-speed switching operations.
Through these applications, the UTF3055L-AE3-R-VB MOSFET can provide efficient and stable current control in multiple fields, ensuring excellent performance of the system under high frequency, low power consumption, and long-term operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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