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UTD410G-AA3-R-VB Product details
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UTD410G-AA3-R-VB MOSFET Product Introduction
**UTD410G-AA3-R-VB** is a single N-channel MOSFET in a **SOT223** package, designed for low-voltage, high-efficiency power management applications. This MOSFET has excellent conductivity and low on-resistance, a maximum drain-source voltage of **30V**, and a maximum drain current of **7A**, making it ideal for low-power power switches, load switching, DC-DC converters, and battery management systems. This MOSFET uses **Trench** technology to optimize switching speed and conduction performance, and is widely used in high-frequency, high-efficiency power management applications.
**UTD410G-AA3-R-VB** is a single N-channel MOSFET in a **SOT223** package, designed for low-voltage, high-efficiency power management applications. This MOSFET has excellent conductivity and low on-resistance, a maximum drain-source voltage of **30V**, and a maximum drain current of **7A**, making it ideal for low-power power switches, load switching, DC-DC converters, and battery management systems. This MOSFET uses **Trench** technology to optimize switching speed and conduction performance, and is widely used in high-frequency, high-efficiency power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | 19mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Package type**: SOT223
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 21mΩ @ VGS = 4.5V
- 19mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 7A
- **Technology type**: Trench technology
- **Package type**: SOT223
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 21mΩ @ VGS = 4.5V
- 19mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 7A
- **Technology type**: Trench technology
Domain and module applications：
Application fields and module examples
**1. Power Switching**
UTD410G-AA3-R-VB MOSFET is widely used in low-voltage power switches. It can be used as a key switching element in power converters to provide efficient and low-loss current control. Its low on-resistance makes it particularly suitable for applications that require efficient current switching, which can minimize power loss and improve system efficiency. It is suitable for various DC power systems and chargers.
**2. DC-DC Converters**
As a switching element in DC-DC converters, UTD410G-AA3-R-VB MOSFET performs well, especially in buck and boost converters. Its low RDS(ON) performance can effectively reduce power loss during the conversion process, thereby improving the overall conversion efficiency. It is suitable for applications where the power supply voltage needs to be stably converted, such as battery-powered systems, automotive power supplies, and communication equipment power supplies.
**3. Battery Management Systems**
This MOSFET is also widely used in battery management systems. It can act as a switching element to control the direction of current flow during battery charging or discharging. The low RDS(ON) characteristics of UTD410G-AA3-R-VB can minimize power loss in the battery management process and extend the battery life, which is particularly suitable for efficient charging and discharging control systems.
**4. Power Tools**
In power tools, UTD410G-AA3-R-VB MOSFET acts as a load switch and power management element, which can quickly switch high currents in a short time, helping power tools achieve more efficient performance. Its low on-resistance helps reduce energy loss when the tool is working, improves battery efficiency, and makes power tools more stable and durable when working continuously.
**5. Load Switching and Current Protection**
This MOSFET is also very suitable for load switching and current protection circuits. Its high conduction performance and high current handling capability enable it to respond quickly to load changes and accurately control the current flow direction, ensuring that the load will not be damaged by overcurrent or overvoltage. It is suitable for industrial control, home appliances and other occasions that require dynamic load adjustment.
**6. Smart Home and Consumer Electronics**
In smart home and consumer electronics, UTD410G-AA3-R-VB MOSFET can be used as a low-voltage load switch and is widely used in battery-powered devices, sensor modules and small power management units. It can provide stable and reliable power switching functions, effectively reduce energy loss, and improve the overall performance and service life of the product.
**7. LED Drivers**
This MOSFET can be used in LED driver circuits as an efficient switching element. Due to its low on-resistance, UTD410G-AA3-R-VB can ensure the efficient operation of LED driver circuits, reduce power loss, and improve the stability of drive current. Suitable for LED driver modules in various lighting systems and display screens, ensuring stability and efficiency during long-term operation.
**1. Power Switching**
UTD410G-AA3-R-VB MOSFET is widely used in low-voltage power switches. It can be used as a key switching element in power converters to provide efficient and low-loss current control. Its low on-resistance makes it particularly suitable for applications that require efficient current switching, which can minimize power loss and improve system efficiency. It is suitable for various DC power systems and chargers.
**2. DC-DC Converters**
As a switching element in DC-DC converters, UTD410G-AA3-R-VB MOSFET performs well, especially in buck and boost converters. Its low RDS(ON) performance can effectively reduce power loss during the conversion process, thereby improving the overall conversion efficiency. It is suitable for applications where the power supply voltage needs to be stably converted, such as battery-powered systems, automotive power supplies, and communication equipment power supplies.
**3. Battery Management Systems**
This MOSFET is also widely used in battery management systems. It can act as a switching element to control the direction of current flow during battery charging or discharging. The low RDS(ON) characteristics of UTD410G-AA3-R-VB can minimize power loss in the battery management process and extend the battery life, which is particularly suitable for efficient charging and discharging control systems.
**4. Power Tools**
In power tools, UTD410G-AA3-R-VB MOSFET acts as a load switch and power management element, which can quickly switch high currents in a short time, helping power tools achieve more efficient performance. Its low on-resistance helps reduce energy loss when the tool is working, improves battery efficiency, and makes power tools more stable and durable when working continuously.
**5. Load Switching and Current Protection**
This MOSFET is also very suitable for load switching and current protection circuits. Its high conduction performance and high current handling capability enable it to respond quickly to load changes and accurately control the current flow direction, ensuring that the load will not be damaged by overcurrent or overvoltage. It is suitable for industrial control, home appliances and other occasions that require dynamic load adjustment.
**6. Smart Home and Consumer Electronics**
In smart home and consumer electronics, UTD410G-AA3-R-VB MOSFET can be used as a low-voltage load switch and is widely used in battery-powered devices, sensor modules and small power management units. It can provide stable and reliable power switching functions, effectively reduce energy loss, and improve the overall performance and service life of the product.
**7. LED Drivers**
This MOSFET can be used in LED driver circuits as an efficient switching element. Due to its low on-resistance, UTD410G-AA3-R-VB can ensure the efficient operation of LED driver circuits, reduce power loss, and improve the stability of drive current. Suitable for LED driver modules in various lighting systems and display screens, ensuring stability and efficiency during long-term operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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