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UTD408L-TN3-R-VB Product details

Product introduction:

1. Product Introduction

**UTD408L-TN3-R-VB** is a unipolar N-channel power MOSFET in **TO252** package, designed for high-efficiency and low-power applications. It has low on-resistance (RDS(ON)) and high current handling capability, suitable for high-current applications that require fast switching and low losses. This MOSFET features **Trench** technology, which helps provide higher efficiency and lower power losses, and is particularly suitable for applications such as power management, motor drive, and DC-DC conversion. It has a VDS of 30V and a maximum drain current of 70A, suitable for high-frequency switching and power conversion modules.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 70A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 70A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 70A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. Detailed parameter description

- **Model**: UTD408L-TN3-R-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **ID (maximum drain current)**: 70A
- **Technology**: Trench
- **Maximum power loss**: Depends on the operating conditions of the application, usually very low under standard use.
- **Operating temperature range**: -55°C to +150°C
- **Features**: Low RDS(ON) provides low conduction loss and high efficiency.

Domain and module applications:

3. Application fields and module examples

#### 1. **Power management and DC-DC conversion modules**
UTD408L-TN3-R-VB has low RDS(ON) and high current carrying capacity, suitable for power management modules that require high efficiency and low power loss. In DC-DC converters, it can act as a switching element to help convert voltage and effectively reduce energy loss, especially in high-efficiency mobile power, server power and UPS (uninterruptible power supply) systems.

#### 2. **Motor drive**
This MOSFET is suitable for motor drive systems, especially in applications that require high efficiency and high current, such as power tools, electric bicycles, electric vehicles, and industrial automation. Its high current capability and low RDS(ON) characteristics enable it to provide lower heat loss and higher system efficiency when driving motors.

#### 3. **Communication equipment**
Due to its low on-resistance and high current carrying capacity, UTD408L-TN3-R-VB is particularly suitable for power management modules in communication equipment. In base station power management systems and radio frequency (RF) systems, it can be used as an efficient power switch to regulate voltage and current supply to ensure that the equipment can still operate stably under high load conditions.

#### 4. **Battery Management System (BMS)**
In battery management systems, UTD408L-TN3-R-VB can be used as a power switch in battery protection and battery balancing management. Due to its low on-resistance, it can effectively reduce energy loss in the battery pack and ensure that the battery can operate efficiently and safely during charging and discharging.

### Summary
**UTD408L-TN3-R-VB** MOSFET is widely used in power management, DC-DC conversion, motor drive and communication equipment due to its excellent current capability and low RDS(ON). It is particularly suitable for scenarios that require high efficiency, high current and low power loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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