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UTD405L-TN3-R-VB Product details
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Product Introduction
**UTD405L-TN3-R-VB** is a **unipolar P-type MOSFET** with a **TO252** package. Its maximum drain-source voltage (Vds) is **-30V**, the gate-source voltage (Vgs) can reach **±20V**, and it has a low on-resistance (Rds(on)). This MOSFET uses **Trench technology**, which gives it lower conduction losses and higher efficiency. Its threshold voltage (Vth) is **-1.7V** and its maximum current carrying capacity is **-38A**, making it ideal for use in applications such as power management, high-efficiency switching, and load driving. With excellent thermal performance and high reliability, UTD405L-TN3-R-VB is an ideal choice for high-efficiency circuit design.
**UTD405L-TN3-R-VB** is a **unipolar P-type MOSFET** with a **TO252** package. Its maximum drain-source voltage (Vds) is **-30V**, the gate-source voltage (Vgs) can reach **±20V**, and it has a low on-resistance (Rds(on)). This MOSFET uses **Trench technology**, which gives it lower conduction losses and higher efficiency. Its threshold voltage (Vth) is **-1.7V** and its maximum current carrying capacity is **-38A**, making it ideal for use in applications such as power management, high-efficiency switching, and load driving. With excellent thermal performance and high reliability, UTD405L-TN3-R-VB is an ideal choice for high-efficiency circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -38A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Unipolar P-type MOSFET
- **Drain-source voltage (Vds)**: -30V (max)
- **Gate-source voltage (Vgs)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (Rds(on))**:
- Rds(on) @ Vgs = 4.5V: 46mΩ
- Rds(on) @ Vgs = 10V: 33mΩ
- **Maximum drain current (Id)**: -38A
- **Technology type**: Trench technology
- **Package type**: TO252
- **Configuration**: Unipolar P-type MOSFET
- **Drain-source voltage (Vds)**: -30V (max)
- **Gate-source voltage (Vgs)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (Rds(on))**:
- Rds(on) @ Vgs = 4.5V: 46mΩ
- Rds(on) @ Vgs = 10V: 33mΩ
- **Maximum drain current (Id)**: -38A
- **Technology type**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power management system**:
UTD405L-TN3-R-VB is suitable for **low-side switches** or **power switches** in **DC-DC converters**, especially in situations requiring high current and high efficiency. Its low on-resistance can reduce power consumption and provide higher conversion efficiency, thereby improving the overall performance of the power system.
2. **Electric vehicle (EV) drive system**:
In **battery management systems (BMS)** and **motor drive circuits** of **electric vehicles**, this MOSFET can be used to provide stable current control for the system during battery charging and discharging, and effectively manage power distribution.
3. **High-efficiency load drive**:
UTD405L-TN3-R-VB is suitable for **load drive modules** that require high current switching, such as **LED driver power supplies** and **power tool battery drivers**. Its low Rds(on) and high current carrying capacity ensure efficient transmission of drive current and reduce heat loss.
4. **Smart Grid and Energy Storage System**:
In **Smart Grid** and **Energy Storage System (ESS)**, this MOSFET can be used in power regulation and energy conversion applications. Its high current resistance and high efficiency make it a key power switch in these high-performance systems.
5. **Consumer Electronics**:
In some **mobile devices** and **battery management systems**, UTD405L-TN3-R-VB can be used for battery switching and power management to optimize battery life and system performance.
By using this MOSFET, low power consumption and high efficiency can be achieved in multiple high-performance applications, especially in the fields of power conversion, battery management, and high current load driving.
1. **Power management system**:
UTD405L-TN3-R-VB is suitable for **low-side switches** or **power switches** in **DC-DC converters**, especially in situations requiring high current and high efficiency. Its low on-resistance can reduce power consumption and provide higher conversion efficiency, thereby improving the overall performance of the power system.
2. **Electric vehicle (EV) drive system**:
In **battery management systems (BMS)** and **motor drive circuits** of **electric vehicles**, this MOSFET can be used to provide stable current control for the system during battery charging and discharging, and effectively manage power distribution.
3. **High-efficiency load drive**:
UTD405L-TN3-R-VB is suitable for **load drive modules** that require high current switching, such as **LED driver power supplies** and **power tool battery drivers**. Its low Rds(on) and high current carrying capacity ensure efficient transmission of drive current and reduce heat loss.
4. **Smart Grid and Energy Storage System**:
In **Smart Grid** and **Energy Storage System (ESS)**, this MOSFET can be used in power regulation and energy conversion applications. Its high current resistance and high efficiency make it a key power switch in these high-performance systems.
5. **Consumer Electronics**:
In some **mobile devices** and **battery management systems**, UTD405L-TN3-R-VB can be used for battery switching and power management to optimize battery life and system performance.
By using this MOSFET, low power consumption and high efficiency can be achieved in multiple high-performance applications, especially in the fields of power conversion, battery management, and high current load driving.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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