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UTD36N03-VB Product details
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1. Product Introduction - UTD36N03-VB
**UTD36N03-VB** is a high-performance **single N-channel MOSFET** in **TO252 package**, designed for low-voltage switching and high-power applications. This MOSFET has a **VDS (drain-source voltage)** up to **30V** and supports **±20V** gate-source voltage, which is very suitable for low-voltage, high-current power and load switching circuits.
In terms of performance, **UTD36N03-VB** provides **low on-resistance**, which are **9mΩ** (at **VGS = 4.5V**) and **7mΩ** (at **VGS = 10V**). This means it can carry more current with lower power loss. Its **ID (drain current)** can reach **70A** at most, making it excellent in systems that require high current flow, especially for applications such as battery management, DC-DC converters, and motor drives.
Using **Trench technology**, **UTD36N03-VB** provides lower **RDS(ON)** and faster switching response, resulting in higher efficiency and lower heat loss in switching power supplies and high-frequency control applications.
**UTD36N03-VB** is a high-performance **single N-channel MOSFET** in **TO252 package**, designed for low-voltage switching and high-power applications. This MOSFET has a **VDS (drain-source voltage)** up to **30V** and supports **±20V** gate-source voltage, which is very suitable for low-voltage, high-current power and load switching circuits.
In terms of performance, **UTD36N03-VB** provides **low on-resistance**, which are **9mΩ** (at **VGS = 4.5V**) and **7mΩ** (at **VGS = 10V**). This means it can carry more current with lower power loss. Its **ID (drain current)** can reach **70A** at most, making it excellent in systems that require high current flow, especially for applications such as battery management, DC-DC converters, and motor drives.
Using **Trench technology**, **UTD36N03-VB** provides lower **RDS(ON)** and faster switching response, resulting in higher efficiency and lower heat loss in switching power supplies and high-frequency control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
| **Parameter** | **Description** |
| ------------------ | ---------------------------------------------- |
| **Model** | UTD36N03-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel MOSFET |
| **VDS (drain-source voltage)** | 30V |
| **VGS (gate-source voltage)** | ±20V |
| **Vth (gate-source threshold voltage)** | 1.7V |
| **RDS(ON)** | 9mΩ @ VGS = 4.5V |
| | 7mΩ @ VGS = 10V |
| **ID (drain current)** | 70A |
| **Technology** | Trench technology|
| **Maximum power** | About 210W (depending on voltage and current) |
| **Operating temperature range** | -55°C to +150°C |
- **VDS (drain-source voltage)**: **30V**, suitable for low voltage applications, ensuring current control accuracy.
- **VGS (gate-source voltage)**: **±20V**, meeting the requirements of most driving circuits.
- **Vth (gate-source threshold voltage)**: **1.7V**, low turn-on voltage, suitable for low voltage operation.
- **RDS(ON)**: **9mΩ** @ VGS = 4.5V, **7mΩ** @ VGS = 10V, extremely low on-resistance, effectively reducing power loss.
- **ID (drain current)**: **70A** maximum, suitable for high current load applications.
- **Technology**: Adopts **Trench technology**, providing lower on-resistance and faster switching response.
| **Parameter** | **Description** |
| ------------------ | ---------------------------------------------- |
| **Model** | UTD36N03-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel MOSFET |
| **VDS (drain-source voltage)** | 30V |
| **VGS (gate-source voltage)** | ±20V |
| **Vth (gate-source threshold voltage)** | 1.7V |
| **RDS(ON)** | 9mΩ @ VGS = 4.5V |
| | 7mΩ @ VGS = 10V |
| **ID (drain current)** | 70A |
| **Technology** | Trench technology|
| **Maximum power** | About 210W (depending on voltage and current) |
| **Operating temperature range** | -55°C to +150°C |
- **VDS (drain-source voltage)**: **30V**, suitable for low voltage applications, ensuring current control accuracy.
- **VGS (gate-source voltage)**: **±20V**, meeting the requirements of most driving circuits.
- **Vth (gate-source threshold voltage)**: **1.7V**, low turn-on voltage, suitable for low voltage operation.
- **RDS(ON)**: **9mΩ** @ VGS = 4.5V, **7mΩ** @ VGS = 10V, extremely low on-resistance, effectively reducing power loss.
- **ID (drain current)**: **70A** maximum, suitable for high current load applications.
- **Technology**: Adopts **Trench technology**, providing lower on-resistance and faster switching response.
Domain and module applications：
3. Application fields and module examples
# **1. Power management and DC-DC converters**
**UTD36N03-VB** is very suitable for **DC-DC converters** and **power management modules**, such as **DC-DC power converters** (Buck, Boost, Buck-Boost converters, etc.). Its low **RDS(ON)** enables it to maintain low conduction losses when providing large currents, ensuring high efficiency of the converter. In the power output stage, the high current capability and low switching loss of MOSFET can significantly improve the performance of the system and reduce heat generation.
# **6. LED drive circuits**
Due to its low power loss and high current capability, **UTD36N03-VB** is also suitable for **LED drive circuits**. In applications such as **smart lighting, LED displays**, MOSFETs can be used to regulate current to drive LED lamps, ensuring stable operation of lamps and extending their service life.
# **Summary**
**UTD36N03-VB** is a high-efficiency, low-loss **N-channel MOSFET** suitable for multiple high-current application scenarios, including **power conversion, DC-DC converters, motor drives, solar inverters, battery management systems**, etc. Its **low RDS(ON)** and **high current carrying capability** make it an indispensable key component in efficient power systems, providing efficient current control and power conversion functions in various industrial and consumer applications.
# **1. Power management and DC-DC converters**
**UTD36N03-VB** is very suitable for **DC-DC converters** and **power management modules**, such as **DC-DC power converters** (Buck, Boost, Buck-Boost converters, etc.). Its low **RDS(ON)** enables it to maintain low conduction losses when providing large currents, ensuring high efficiency of the converter. In the power output stage, the high current capability and low switching loss of MOSFET can significantly improve the performance of the system and reduce heat generation.
# **6. LED drive circuits**
Due to its low power loss and high current capability, **UTD36N03-VB** is also suitable for **LED drive circuits**. In applications such as **smart lighting, LED displays**, MOSFETs can be used to regulate current to drive LED lamps, ensuring stable operation of lamps and extending their service life.
# **Summary**
**UTD36N03-VB** is a high-efficiency, low-loss **N-channel MOSFET** suitable for multiple high-current application scenarios, including **power conversion, DC-DC converters, motor drives, solar inverters, battery management systems**, etc. Its **low RDS(ON)** and **high current carrying capability** make it an indispensable key component in efficient power systems, providing efficient current control and power conversion functions in various industrial and consumer applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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