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UTC654-AG6-R-VB Product details
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Product Introduction
**UTC654-AG6-R-VB** is a **single P-channel MOSFET**, which adopts **SOT23-6 package**, has excellent switching performance and low on-resistance, and is particularly suitable for low-voltage, high-efficiency power management systems. The **maximum drain-source voltage (VDS)** of this MOSFET is **-30V**, which is suitable for applications in **negative voltage systems** and can provide reliable performance in efficient power conversion and signal switching. Its **threshold voltage (Vth)** is **-1.7V**, and it has **low on-resistance (RDS(ON))**, which is **54mΩ** at **VGS=4.5V** and **49mΩ** at **VGS=10V**, which can significantly reduce switching losses and improve overall efficiency.
This MOSFET adopts **Trench technology**, which can provide low on-resistance and excel in high-frequency, high-current switching applications. The **maximum drain current (ID)** of the UT654-AG6-R-VB is **-4.8A**, meeting the current requirements in most power management and drive circuits. Its small **SOT23-6 package** makes it ideal for compact devices and high-density circuit board applications.
**UTC654-AG6-R-VB** is a **single P-channel MOSFET**, which adopts **SOT23-6 package**, has excellent switching performance and low on-resistance, and is particularly suitable for low-voltage, high-efficiency power management systems. The **maximum drain-source voltage (VDS)** of this MOSFET is **-30V**, which is suitable for applications in **negative voltage systems** and can provide reliable performance in efficient power conversion and signal switching. Its **threshold voltage (Vth)** is **-1.7V**, and it has **low on-resistance (RDS(ON))**, which is **54mΩ** at **VGS=4.5V** and **49mΩ** at **VGS=10V**, which can significantly reduce switching losses and improve overall efficiency.
This MOSFET adopts **Trench technology**, which can provide low on-resistance and excel in high-frequency, high-current switching applications. The **maximum drain current (ID)** of the UT654-AG6-R-VB is **-4.8A**, meeting the current requirements in most power management and drive circuits. Its small **SOT23-6 package** makes it ideal for compact devices and high-density circuit board applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description
- **Model**: UTC654-AG6-R-VB
- **Package**: SOT23-6
- **Configuration**: Single P channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C (typical)
- **Model**: UTC654-AG6-R-VB
- **Package**: SOT23-6
- **Configuration**: Single P channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4.8A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C (typical)
Domain and module applications：
Application fields and module examples
1. **Low voltage power conversion**
- UTC654-AG6-R-VB is a **P-channel MOSFET**, suitable for **DC-DC converters** (such as buck converters). The low on-resistance of this MOSFET enables it to effectively reduce energy loss during high-efficiency power conversion and improve the overall efficiency of the system, especially in low-voltage power systems. It can be widely used in **mobile phone chargers**, **mobile power supplies** and **battery management systems (BMS)**.
2. **Power switch for negative voltage systems**
- In systems that require negative voltage management, the **maximum drain-source voltage** of UTC654-AG6-R-VB is **-30V**, which is very suitable for **negative power converters** and **negative voltage power switches**. As a switching element in such power supplies, it can effectively control current and reduce losses, and is suitable for **negative voltage amplifiers**, **negative power regulators** and other devices.
3. **Battery Charging and Protection Circuits**
- The low **RDS(ON)** of this MOSFET makes it an ideal choice for **battery charging circuits**. In battery charging and protection systems, the UTC654-AG6-R-VB can efficiently switch current and avoid excessive heat generated by high on-resistance, ensuring that the battery charging process is more efficient and temperature controlled. It is suitable for applications such as **lithium battery management** and **battery protection circuits** to improve battery performance and safety.
4. **Smart Power Switch**
- In **smart power switch** systems, the UTC654-AG6-R-VB provides efficient switching control, and its low on-resistance effectively reduces switching losses. This MOSFET can be used as a key switching element in a **power switch** or **smart battery management module**, and is widely used in power management of **wireless charging systems**, **high-efficiency power adapters**, and **small consumer electronics** (such as wireless headphones, smart watches).
5. **Power amplifier**
- UTC654-AG6-R-VB can also be used as a power switch element in **power amplifier**, especially in the power supply part of **audio power amplifier** or **RF power amplifier**. In these applications, low **RDS(ON)** helps to improve power conversion efficiency, reduce heat generation, and improve system stability.
6. **Automotive electronic system**
- UTC654-AG6-R-VB can be used in **automotive electronic system** as a **power management switch**, such as **on-board battery management system**, **on-board power distribution unit**, **electric power steering**, etc. In these applications, low on-resistance can effectively reduce power loss, improve the reliability and stability of the power system, and extend the service life of the battery.
7. **Load Switch and Protection**
- In **load switch** and **current protection circuit**, UTC654-AG6-R-VB as a P-channel MOSFET can also be used to control the load current and protect the circuit from overcurrent damage. During the efficient switching process, it can ensure the smooth transmission of current and reduce the fluctuation of voltage and current. It is widely used in the power management of **industrial power systems**, **power tools** and **home appliances**.
8. **Switching Power Supply**
- UTC654-AG6-R-VB can also be used in **switching power supplies**, especially those power circuits that need to switch negative current. It can ensure low on-resistance and high efficiency in negative power switching applications, improve the overall performance of the power system, reduce heat and power consumption, and is suitable for **uninterruptible power supply (UPS)**, **communication power supply** and **high-efficiency power management equipment**.
1. **Low voltage power conversion**
- UTC654-AG6-R-VB is a **P-channel MOSFET**, suitable for **DC-DC converters** (such as buck converters). The low on-resistance of this MOSFET enables it to effectively reduce energy loss during high-efficiency power conversion and improve the overall efficiency of the system, especially in low-voltage power systems. It can be widely used in **mobile phone chargers**, **mobile power supplies** and **battery management systems (BMS)**.
2. **Power switch for negative voltage systems**
- In systems that require negative voltage management, the **maximum drain-source voltage** of UTC654-AG6-R-VB is **-30V**, which is very suitable for **negative power converters** and **negative voltage power switches**. As a switching element in such power supplies, it can effectively control current and reduce losses, and is suitable for **negative voltage amplifiers**, **negative power regulators** and other devices.
3. **Battery Charging and Protection Circuits**
- The low **RDS(ON)** of this MOSFET makes it an ideal choice for **battery charging circuits**. In battery charging and protection systems, the UTC654-AG6-R-VB can efficiently switch current and avoid excessive heat generated by high on-resistance, ensuring that the battery charging process is more efficient and temperature controlled. It is suitable for applications such as **lithium battery management** and **battery protection circuits** to improve battery performance and safety.
4. **Smart Power Switch**
- In **smart power switch** systems, the UTC654-AG6-R-VB provides efficient switching control, and its low on-resistance effectively reduces switching losses. This MOSFET can be used as a key switching element in a **power switch** or **smart battery management module**, and is widely used in power management of **wireless charging systems**, **high-efficiency power adapters**, and **small consumer electronics** (such as wireless headphones, smart watches).
5. **Power amplifier**
- UTC654-AG6-R-VB can also be used as a power switch element in **power amplifier**, especially in the power supply part of **audio power amplifier** or **RF power amplifier**. In these applications, low **RDS(ON)** helps to improve power conversion efficiency, reduce heat generation, and improve system stability.
6. **Automotive electronic system**
- UTC654-AG6-R-VB can be used in **automotive electronic system** as a **power management switch**, such as **on-board battery management system**, **on-board power distribution unit**, **electric power steering**, etc. In these applications, low on-resistance can effectively reduce power loss, improve the reliability and stability of the power system, and extend the service life of the battery.
7. **Load Switch and Protection**
- In **load switch** and **current protection circuit**, UTC654-AG6-R-VB as a P-channel MOSFET can also be used to control the load current and protect the circuit from overcurrent damage. During the efficient switching process, it can ensure the smooth transmission of current and reduce the fluctuation of voltage and current. It is widely used in the power management of **industrial power systems**, **power tools** and **home appliances**.
8. **Switching Power Supply**
- UTC654-AG6-R-VB can also be used in **switching power supplies**, especially those power circuits that need to switch negative current. It can ensure low on-resistance and high efficiency in negative power switching applications, improve the overall performance of the power system, reduce heat and power consumption, and is suitable for **uninterruptible power supply (UPS)**, **communication power supply** and **high-efficiency power management equipment**.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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