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UT85N03L-TN3-T-VB Product details
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1. Product Introduction
**UT85N03L-TN3-T-VB** is a **single N-channel MOSFET** in **TO252 package**, featuring **ultra-low on-resistance** and **high current carrying capacity**. This MOSFET uses advanced **Trench technology**, providing extremely low **RDS(ON)** (**2mΩ** @VGS=10V) and **high current capability** (**100A**), making it an ideal choice for high-efficiency applications such as power management, motor drive and switching power supplies. Its **maximum drain-source voltage (VDS)** is **30V**, suitable for low-voltage systems. The low **RDS(ON)** feature makes this MOSFET ideal for applications that require low conduction losses and efficient power conversion. The device has a **threshold voltage (Vth)** of **1.7V**, which enables fast startup at low gate voltages, improving system efficiency and reducing energy waste.
**UT85N03L-TN3-T-VB** is a **single N-channel MOSFET** in **TO252 package**, featuring **ultra-low on-resistance** and **high current carrying capacity**. This MOSFET uses advanced **Trench technology**, providing extremely low **RDS(ON)** (**2mΩ** @VGS=10V) and **high current capability** (**100A**), making it an ideal choice for high-efficiency applications such as power management, motor drive and switching power supplies. Its **maximum drain-source voltage (VDS)** is **30V**, suitable for low-voltage systems. The low **RDS(ON)** feature makes this MOSFET ideal for applications that require low conduction losses and efficient power conversion. The device has a **threshold voltage (Vth)** of **1.7V**, which enables fast startup at low gate voltages, improving system efficiency and reducing energy waste.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @VGS=4.5V: 3mΩ
- @VGS=10V: 2mΩ
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
- **Input charge (Qg)**: Suitable for high-frequency switching applications
- **Switching speed**: Fast switching response, suitable for high-frequency applications
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (junction-to-case)**: Optimized thermal design, suitable for high power applications
- **Radiation resistance**: Suitable for complex environments and places with high electromagnetic interference
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @VGS=4.5V: 3mΩ
- @VGS=10V: 2mΩ
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
- **Input charge (Qg)**: Suitable for high-frequency switching applications
- **Switching speed**: Fast switching response, suitable for high-frequency applications
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (junction-to-case)**: Optimized thermal design, suitable for high power applications
- **Radiation resistance**: Suitable for complex environments and places with high electromagnetic interference
Domain and module applications：
3. Application fields and modules
# 1. **Power management system**
UT85N03L-TN3-T-VB is particularly suitable for **efficient **DC-DC converters** and **power adapters** in **power management systems**. Due to its **ultra-low RDS(ON)** and **high current capability (100A)**, this MOSFET can significantly reduce power loss and improve the overall efficiency of the system, and is particularly suitable for **battery management system** (BMS) and **mobile device charging** systems. It can effectively handle **high current loads** and has **fast switching capabilities**, making it suitable for battery-driven portable devices.
# 6. **Load switch**
In **load switch applications**, UT85N03L-TN3-T-VB can be used for **efficient load switching**, providing fast response and extremely low power loss. In **high-power power management, industrial automation systems** and **communication equipment**, the **low on-resistance** characteristics of MOSFET make it excellent in load switching and power protection applications, especially suitable for systems requiring low power consumption, fast switching and high current control.
# 7. **Intelligent Power Switch**
As an **intelligent power switch**, UT85N03L-TN3-T-VB is suitable for **smart home devices**, **network equipment** and **industrial control systems**. The **fast switching capability** and **high current handling capability** of this MOSFET make it an ideal choice for applications such as **battery protection, overcurrent protection**. In **intelligent battery management systems** and **lossless power distribution** systems, it can provide efficient power control and protection functions.
# 8. **Battery Management System (BMS)**
In **Battery Management System (BMS)**, UT85N03L-TN3-T-VB is a **switching element** that can provide **efficient current switching** and **battery protection** during battery charging and discharging. Due to its **low on-resistance** and **high current carrying capacity**, this MOSFET is very suitable for battery management systems in **electric vehicles (EVs)** and **energy storage systems**, ensuring stable operation of the battery pack during charging and discharging, and improving the overall energy efficiency of the system.
Summary
**UT85N03L-TN3-T-VB** is a **single N-channel MOSFET** with **high current carrying capacity (100A)** and **ultra-low on-resistance (2mΩ)**, suitable for applications such as high-efficiency power management, motor drive, and switching power supplies. Its low conduction loss and high switching speed enable it to provide excellent performance in multiple fields such as battery management systems, inverters, automotive electronics, smart power switches, switching power supplies, etc. This MOSFET can help designers reduce system power consumption, improve efficiency, and ensure long life and stability of the equipment.
# 1. **Power management system**
UT85N03L-TN3-T-VB is particularly suitable for **efficient **DC-DC converters** and **power adapters** in **power management systems**. Due to its **ultra-low RDS(ON)** and **high current capability (100A)**, this MOSFET can significantly reduce power loss and improve the overall efficiency of the system, and is particularly suitable for **battery management system** (BMS) and **mobile device charging** systems. It can effectively handle **high current loads** and has **fast switching capabilities**, making it suitable for battery-driven portable devices.
# 6. **Load switch**
In **load switch applications**, UT85N03L-TN3-T-VB can be used for **efficient load switching**, providing fast response and extremely low power loss. In **high-power power management, industrial automation systems** and **communication equipment**, the **low on-resistance** characteristics of MOSFET make it excellent in load switching and power protection applications, especially suitable for systems requiring low power consumption, fast switching and high current control.
# 7. **Intelligent Power Switch**
As an **intelligent power switch**, UT85N03L-TN3-T-VB is suitable for **smart home devices**, **network equipment** and **industrial control systems**. The **fast switching capability** and **high current handling capability** of this MOSFET make it an ideal choice for applications such as **battery protection, overcurrent protection**. In **intelligent battery management systems** and **lossless power distribution** systems, it can provide efficient power control and protection functions.
# 8. **Battery Management System (BMS)**
In **Battery Management System (BMS)**, UT85N03L-TN3-T-VB is a **switching element** that can provide **efficient current switching** and **battery protection** during battery charging and discharging. Due to its **low on-resistance** and **high current carrying capacity**, this MOSFET is very suitable for battery management systems in **electric vehicles (EVs)** and **energy storage systems**, ensuring stable operation of the battery pack during charging and discharging, and improving the overall energy efficiency of the system.
Summary
**UT85N03L-TN3-T-VB** is a **single N-channel MOSFET** with **high current carrying capacity (100A)** and **ultra-low on-resistance (2mΩ)**, suitable for applications such as high-efficiency power management, motor drive, and switching power supplies. Its low conduction loss and high switching speed enable it to provide excellent performance in multiple fields such as battery management systems, inverters, automotive electronics, smart power switches, switching power supplies, etc. This MOSFET can help designers reduce system power consumption, improve efficiency, and ensure long life and stability of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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