UT85N03G-TN3-R-VB Product details
Product introduction:
**UT85N03G-TN3-R-VB** is a **single N-channel MOSFET**, which adopts **TO252 package** and is suitable for application scenarios requiring high current, high power and low on-resistance. The maximum drain-source voltage (VDS) of this MOSFET is **30V**, which is suitable for efficient power management of medium and low voltage systems. The **maximum drain current** of this MOSFET can reach **100A**, providing strong current control capability to meet the system with high power requirements. Its **RDS(ON)** is **3mΩ** at **VGS=4.5V** and is reduced to **2mΩ** at **VGS=10V**. It has excellent conductivity, can effectively reduce switching loss and power consumption, and improve the efficiency and stability of the system.
UT85N03G-TN3-R-VB is based on **Trench technology**, which enables MOSFET to exhibit extremely low on-resistance during high-frequency switching, and exhibit excellent thermal stability and low power loss in high-current applications. Its high current handling capability makes it ideal for use in scenarios that require fast switching and high power carrying, making it an ideal choice for efficient power conversion and power management.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Model**: UT85N03G-TN3-R-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C (typical)
Domain and module applications:
1. **High-efficiency DC-DC converter**
- **UT85N03G-TN3-R-VB**'s low **RDS(ON)** and high **ID** characteristics make it perform well in **DC-DC converter**, especially suitable for **Buck converter** and **Boost converter**. This MOSFET can effectively reduce losses in **high power conversion** and provide higher conversion efficiency. It is suitable for **power adapter**, **LED driver power** and **battery management system** and other scenarios that require efficient current regulation.
2. **Battery Management System (BMS)**
- In **battery management system**, UT85N03G-TN3-R-VB is widely used in high-current charge and discharge control. Low on-resistance (RDS(ON)) ensures efficient current transmission during battery charging and discharging, reducing energy loss and extending battery life. It is particularly suitable for **lithium battery management**, **battery balancing circuit** and **battery protection system**, improving battery reliability and system response speed.
3. **Power tools and drive systems**
- In **power tools** and **electric drive systems**, UT85N03G-TN3-R-VB provides a strong current carrying capacity (100A), making it an ideal switching element in **electric motor drive circuits**. The low **RDS(ON)** of this MOSFET can reduce heat loss and maintain high efficiency under high load. It is widely used in **power tools**, **electric curtains**, **electric balers** and other equipment to improve product performance and work efficiency.
4. **Intelligent power management**
- In **intelligent power management systems**, UT85N03G-TN3-R-VB can effectively optimize power transmission and reduce power consumption due to its high current and low on-resistance. In **home appliances**, **smart power adapters** and **wireless chargers**, it can provide stable power supply and improve efficiency, ensuring that the equipment can achieve high performance under different loads.
5. **Electric Vehicle (EV) Battery Management and Drive Control**
- In **electric vehicles (EVs)**, the UT85N03G-TN3-R-VB has **low on-resistance** and **high current capability**, which is very suitable for **battery management systems (BMS)** and **electric drive systems** of electric vehicles. It can help regulate the charge and discharge current of the battery, improve the efficiency of the power system, extend the battery life, and support high-power motor drives.
6. **Power amplifiers and audio equipment**
- In **power amplifiers** and **audio equipment**, the UT85N03G-TN3-R-VB acts as a high-efficiency switching element to ensure power stability when amplifying audio signals. MOSFET's **low RDS(ON)** characteristic enables it to effectively reduce power loss and ensure stable output power of audio equipment, which is suitable for **home theater**, **professional audio** and other high-fidelity audio systems.
7. **High-frequency switching power supply (SMPS)**
- In **high-frequency switching power supply (SMPS)**, UT85N03G-TN3-R-VB can effectively improve the working efficiency of the power supply due to its excellent switching performance and low power loss. It is widely used in **industrial power supply**, **communication power supply**, **computer power adapter** and other fields, and can maintain stable operation under different load conditions, ensuring high power conversion efficiency and good system reliability.
8. **Automation control and power monitoring**
- In **automation control systems** and **power monitoring** systems, UT85N03G-TN3-R-VB can be used as a high-current switching element to help control high-power loads. It is suitable for **industrial automation equipment**, **robot drive** and **power monitoring equipment**, and can provide efficient and stable current management, improving the response speed and reliability of the entire system.
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