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UT70P03L-TM3-T-VB Product details
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1. Product Introduction
**UT70P03L-TM3-T-VB** is a **single P-channel MOSFET** in **TO251 package**. It adopts advanced **Trench technology**, has very low **on-resistance** and **high current carrying capacity**, and is an ideal choice for applications such as power management systems, motor drives, and switching power supplies. The maximum drain-source voltage (VDS) of this device is **-30V**, which is suitable for medium and low voltage applications. It has a **threshold voltage Vth** of **-2.5V**, which enables it to start working at low gate voltage. Its **maximum drain current (ID)** is **-70A**, which is suitable for applications that require higher current drive capability. **RDS(ON)** values are **10.8mΩ** (@VGS=4.5V) and **8mΩ** (@VGS=10V), which means it has extremely low conduction losses and is suitable for high-efficiency power and drive applications.
**UT70P03L-TM3-T-VB** is a **single P-channel MOSFET** in **TO251 package**. It adopts advanced **Trench technology**, has very low **on-resistance** and **high current carrying capacity**, and is an ideal choice for applications such as power management systems, motor drives, and switching power supplies. The maximum drain-source voltage (VDS) of this device is **-30V**, which is suitable for medium and low voltage applications. It has a **threshold voltage Vth** of **-2.5V**, which enables it to start working at low gate voltage. Its **maximum drain current (ID)** is **-70A**, which is suitable for applications that require higher current drive capability. **RDS(ON)** values are **10.8mΩ** (@VGS=4.5V) and **8mΩ** (@VGS=10V), which means it has extremely low conduction losses and is suitable for high-efficiency power and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -2.5V | -70A | 8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -2.5V | -70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -30V | -2.5V | -70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
2. Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- @VGS=4.5V: 10.8mΩ
- @VGS=10V: 8mΩ
- **Maximum drain current (ID)**: -70A
- **Technology**: Trench technology
- **Input charge (Qg)**: Suitable for high-frequency switching applications
- **Switching speed**: Optimized switching performance for high-frequency and efficient power management
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (junction-to-case)**: Optimized thermal design, suitable for high power applications
- **Radiation resistance**: Suitable for complex environments and places with high electromagnetic interference
- **Package type**: TO251
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- @VGS=4.5V: 10.8mΩ
- @VGS=10V: 8mΩ
- **Maximum drain current (ID)**: -70A
- **Technology**: Trench technology
- **Input charge (Qg)**: Suitable for high-frequency switching applications
- **Switching speed**: Optimized switching performance for high-frequency and efficient power management
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (junction-to-case)**: Optimized thermal design, suitable for high power applications
- **Radiation resistance**: Suitable for complex environments and places with high electromagnetic interference
Domain and module applications：
3. Applicable fields and modules
# 1. **Power management system**
UT70P03L-TM3-T-VB is particularly suitable for **DC-DC converters**, **battery management systems** (BMS) and **power modules** that require efficient switching control in **power management systems**. Due to its low **RDS(ON)** and high current capability, it can effectively reduce energy loss in the power conversion process and improve efficiency. It is widely used in **consumer electronics**, **communication equipment**, **smart home** and **industrial power systems**, especially for **battery-driven devices** and **mobile power**.
# 6. **Intelligent power switch**
As an **intelligent power switch**, UT70P03L-TM3-T-VB provides efficient power switching solutions in various **smart home appliances** and **industrial equipment**. In these applications, P-channel MOSFETs are often used for power switching and load control, and can achieve **fast switching** and **low power operation**, which is particularly suitable for applications such as **power protection, temperature-controlled power switching**, etc.
# 7. **Solar energy system**
In **solar panels** and **solar inverters**, UT70P03L-TM3-T-VB is an efficient **power conversion component** that can handle large currents at lower **VDS**, and is suitable for **DC-AC power conversion** in solar power generation systems. The **low on-resistance** of this MOSFET can minimize power losses during the conversion process and improve the overall efficiency of the solar power generation system.
# 8. **Load Switch and Power Distribution**
The application of UT70P03L-TM3-T-VB in **power distribution and load switching**, especially in **efficient power management** and **power distribution systems**, can effectively improve the efficiency of the power system and reduce heat generation through its high load capacity and low RDS(ON) characteristics. This makes it very valuable in **large industrial control systems, power network equipment** and other applications that require precise load control.
Summary
**UT70P03L-TM3-T-VB** is a **single P-channel MOSFET** with excellent performance. It adopts **Trench technology** and has **maximum drain-source voltage (VDS) -30V** and **maximum drain current (ID) -70A**. It is suitable for various applications that require efficient switching and load control. Due to its **low RDS(ON)** and **high current carrying capacity**, it is widely used in**power management systems, motor drives, battery management systems, solar inverters, switching power supplies** and other fields, especially suitable for high efficiency and low power loss environments.
# 1. **Power management system**
UT70P03L-TM3-T-VB is particularly suitable for **DC-DC converters**, **battery management systems** (BMS) and **power modules** that require efficient switching control in **power management systems**. Due to its low **RDS(ON)** and high current capability, it can effectively reduce energy loss in the power conversion process and improve efficiency. It is widely used in **consumer electronics**, **communication equipment**, **smart home** and **industrial power systems**, especially for **battery-driven devices** and **mobile power**.
# 6. **Intelligent power switch**
As an **intelligent power switch**, UT70P03L-TM3-T-VB provides efficient power switching solutions in various **smart home appliances** and **industrial equipment**. In these applications, P-channel MOSFETs are often used for power switching and load control, and can achieve **fast switching** and **low power operation**, which is particularly suitable for applications such as **power protection, temperature-controlled power switching**, etc.
# 7. **Solar energy system**
In **solar panels** and **solar inverters**, UT70P03L-TM3-T-VB is an efficient **power conversion component** that can handle large currents at lower **VDS**, and is suitable for **DC-AC power conversion** in solar power generation systems. The **low on-resistance** of this MOSFET can minimize power losses during the conversion process and improve the overall efficiency of the solar power generation system.
# 8. **Load Switch and Power Distribution**
The application of UT70P03L-TM3-T-VB in **power distribution and load switching**, especially in **efficient power management** and **power distribution systems**, can effectively improve the efficiency of the power system and reduce heat generation through its high load capacity and low RDS(ON) characteristics. This makes it very valuable in **large industrial control systems, power network equipment** and other applications that require precise load control.
Summary
**UT70P03L-TM3-T-VB** is a **single P-channel MOSFET** with excellent performance. It adopts **Trench technology** and has **maximum drain-source voltage (VDS) -30V** and **maximum drain current (ID) -70A**. It is suitable for various applications that require efficient switching and load control. Due to its **low RDS(ON)** and **high current carrying capacity**, it is widely used in**power management systems, motor drives, battery management systems, solar inverters, switching power supplies** and other fields, especially suitable for high efficiency and low power loss environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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