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UT6402L-AG6-R-VB Product details
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Product Introduction:
**UT6402L-AG6-R-VB** is a dual N-channel MOSFET in SOT23-6 package, designed for low-voltage and high-efficiency switching applications. Its drain-source voltage (VDS) is up to 20V, and its gate-source voltage (VGS) supports a maximum operating range of ±12V, which is suitable for a variety of low-power electronic applications such as power management, load switching, and small power modules.
This MOSFET uses Trench technology and has a low on-resistance (RDS(ON)), which enables it to provide efficient current transmission even under low voltage conditions. When VGS is 2.5V, the on-resistance is 28mΩ, and when VGS is 4.5V, the on-resistance drops to 22mΩ, ensuring reduced power loss and heat, and improving the overall efficiency of the system. The maximum drain current (ID) is 6A, which is suitable for applications requiring efficient switching control.
**UT6402L-AG6-R-VB** is a dual N-channel MOSFET in SOT23-6 package, designed for low-voltage and high-efficiency switching applications. Its drain-source voltage (VDS) is up to 20V, and its gate-source voltage (VGS) supports a maximum operating range of ±12V, which is suitable for a variety of low-power electronic applications such as power management, load switching, and small power modules.
This MOSFET uses Trench technology and has a low on-resistance (RDS(ON)), which enables it to provide efficient current transmission even under low voltage conditions. When VGS is 2.5V, the on-resistance is 28mΩ, and when VGS is 4.5V, the on-resistance drops to 22mΩ, ensuring reduced power loss and heat, and improving the overall efficiency of the system. The maximum drain current (ID) is 6A, which is suitable for applications requiring efficient switching control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
Detailed parameter description:
- **Model**: UT6402L-AG6-R-VB
- **Package**: SOT23-6
- **Configuration**: Dual N-type channel
- **VDS (drain-source voltage)**: 20V
- **VGS (gate-source voltage)**: ±12V
- **Vth (throw-on voltage)**: 0.5V ~ 1.5V
- **RDS(ON) (on-resistance)**:
- @VGS=2.5V: 28mΩ
- @VGS=4.5V: 22mΩ
- **ID (maximum leakage current)**: 6A
- **Technology**: Trench technology
- **Model**: UT6402L-AG6-R-VB
- **Package**: SOT23-6
- **Configuration**: Dual N-type channel
- **VDS (drain-source voltage)**: 20V
- **VGS (gate-source voltage)**: ±12V
- **Vth (throw-on voltage)**: 0.5V ~ 1.5V
- **RDS(ON) (on-resistance)**:
- @VGS=2.5V: 28mΩ
- @VGS=4.5V: 22mΩ
- **ID (maximum leakage current)**: 6A
- **Technology**: Trench technology
Domain and module applications：
Application areas and module examples:
1. **Power management system**
UT6402L-AG6-R-VB is particularly suitable for low-voltage power management systems due to its low on-resistance and high current carrying capacity, which can effectively control the current flow and improve power efficiency. In various DC-DC converters, battery management systems, voltage-regulated power supplies, and power distribution systems, UT6402L-AG6-R-VB can be used as an efficient switching element to ensure the stability and reliability of the power system.
2. **Load switch and battery-powered applications**
In battery-powered systems, such as wireless devices, portable electronic devices, and battery management systems, UT6402L-AG6-R-VB can be used as a load switch. The low on-resistance enables it to effectively control the flow of battery current, reduce power consumption, and extend battery life. The MOSFET can also maintain low power loss under high-frequency switching, ensuring long-term operation of the equipment.
3. **Smart Home and Internet of Things (IoT) Devices**
Due to its compact SOT23-6 package, the UT6402L-AG6-R-VB is ideal for small power modules and load switch applications in smart home and IoT devices. For example, in smart sockets, sensors, control panels and other smart devices, it can efficiently control the flow of current and power management, while ensuring the efficient operation of the equipment, meeting the requirements of IoT devices for low power consumption and high efficiency.
4. **LED Drive Circuit**
UT6402L-AG6-R-VB is suitable for high-efficiency switching applications in LED drive circuits. In LED lighting systems, this MOSFET can be used to regulate current, ensure stable power supply and reduce energy loss, and is suitable for a variety of lamps and lighting applications, including smart lighting systems, automotive lighting, commercial lighting and home lighting.
5. **Signal amplification and switching circuits**
Due to its fast switching performance, UT6402L-AG6-R-VB is also widely used in signal amplification and low-power switching circuits. Its low on-resistance characteristics and low switching losses make it very suitable for switching and regulation circuits in communication equipment, audio and video equipment, and sensor interface circuits, which can effectively reduce signal loss and improve system stability.
6. **Wireless communication module**
In wireless communication modules, UT6402L-AG6-R-VB can be used as an efficient power switching element and is widely used in power management systems of wireless communication devices such as Bluetooth, Wi-Fi and Zigbee. Its low RDS(ON) ensures high-efficiency operation of wireless devices, and is particularly suitable for high-frequency switching applications such as portable wireless devices and base stations.
1. **Power management system**
UT6402L-AG6-R-VB is particularly suitable for low-voltage power management systems due to its low on-resistance and high current carrying capacity, which can effectively control the current flow and improve power efficiency. In various DC-DC converters, battery management systems, voltage-regulated power supplies, and power distribution systems, UT6402L-AG6-R-VB can be used as an efficient switching element to ensure the stability and reliability of the power system.
2. **Load switch and battery-powered applications**
In battery-powered systems, such as wireless devices, portable electronic devices, and battery management systems, UT6402L-AG6-R-VB can be used as a load switch. The low on-resistance enables it to effectively control the flow of battery current, reduce power consumption, and extend battery life. The MOSFET can also maintain low power loss under high-frequency switching, ensuring long-term operation of the equipment.
3. **Smart Home and Internet of Things (IoT) Devices**
Due to its compact SOT23-6 package, the UT6402L-AG6-R-VB is ideal for small power modules and load switch applications in smart home and IoT devices. For example, in smart sockets, sensors, control panels and other smart devices, it can efficiently control the flow of current and power management, while ensuring the efficient operation of the equipment, meeting the requirements of IoT devices for low power consumption and high efficiency.
4. **LED Drive Circuit**
UT6402L-AG6-R-VB is suitable for high-efficiency switching applications in LED drive circuits. In LED lighting systems, this MOSFET can be used to regulate current, ensure stable power supply and reduce energy loss, and is suitable for a variety of lamps and lighting applications, including smart lighting systems, automotive lighting, commercial lighting and home lighting.
5. **Signal amplification and switching circuits**
Due to its fast switching performance, UT6402L-AG6-R-VB is also widely used in signal amplification and low-power switching circuits. Its low on-resistance characteristics and low switching losses make it very suitable for switching and regulation circuits in communication equipment, audio and video equipment, and sensor interface circuits, which can effectively reduce signal loss and improve system stability.
6. **Wireless communication module**
In wireless communication modules, UT6402L-AG6-R-VB can be used as an efficient power switching element and is widely used in power management systems of wireless communication devices such as Bluetooth, Wi-Fi and Zigbee. Its low RDS(ON) ensures high-efficiency operation of wireless devices, and is particularly suitable for high-frequency switching applications such as portable wireless devices and base stations.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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