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UT6401L-AG6-R-VB Product details
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Product Introduction
**UT6401L-AG6-R-VB** is a dual-channel MOSFET based on Trench technology with a SOT23-6 package, suitable for a variety of application scenarios such as low-voltage power management, switching circuits, and power control. The device includes two PN channel MOSFET structures, P-Channel and N-Channel. This configuration gives it greater flexibility in circuit design and enables bidirectional current control.
This MOSFET has good switching characteristics and low on-resistance, with a maximum VDS voltage of -60V, which is suitable for most low-voltage applications. Its RDS(ON) values are 85mΩ (VGS=4.5V) and 70mΩ (VGS=10V) at different gate voltages, which ensures high efficiency under high current loads and a maximum continuous drain current of -4.5A.
**UT6401L-AG6-R-VB** is a dual-channel MOSFET based on Trench technology with a SOT23-6 package, suitable for a variety of application scenarios such as low-voltage power management, switching circuits, and power control. The device includes two PN channel MOSFET structures, P-Channel and N-Channel. This configuration gives it greater flexibility in circuit design and enables bidirectional current control.
This MOSFET has good switching characteristics and low on-resistance, with a maximum VDS voltage of -60V, which is suitable for most low-voltage applications. Its RDS(ON) values are 85mΩ (VGS=4.5V) and 70mΩ (VGS=10V) at different gate voltages, which ensures high efficiency under high current loads and a maximum continuous drain current of -4.5A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -60V | -1.7V | -4.5A | 70mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -60V | -1.7V | -4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -60V | -1.7V | -4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
Detailed parameter description
- **Package**: SOT23-6
- **Configuration**: Dual P+P-Channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throw-through voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 70mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.5A
- **Technology**: Trench
- **Maximum power loss (Pd)**: Please refer to the data sheet
The low on-resistance and high current carrying capability of this MOSFET give it significant advantages in the field of high-efficiency power management and power conversion.
- **Package**: SOT23-6
- **Configuration**: Dual P+P-Channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throw-through voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 70mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -4.5A
- **Technology**: Trench
- **Maximum power loss (Pd)**: Please refer to the data sheet
The low on-resistance and high current carrying capability of this MOSFET give it significant advantages in the field of high-efficiency power management and power conversion.
Domain and module applications：
Application fields and module examples
1. **Power management**:
UT6401L-AG6-R-VB can be used in power conversion circuits, especially in low voltage and high current requirements. For example, in a switching power supply (SMPS), MOSFET can be used as the main switching element to efficiently control the current flow while reducing heat generation. Its low RDS(ON) value ensures high efficiency of the power system.
2. **Load switch**:
In the load switch circuit, the dual PN channel configuration enables UT6401L-AG6-R-VB to work effectively in both positive and negative directions. For example, it can be used as a switching element in a DC-DC converter, capable of handling large currents while maintaining low conduction losses.
3. **Battery management system (BMS)**:
This MOSFET is also suitable for current switching and protection in battery management systems. Due to its high conduction capability and low power consumption, the UT6401L-AG6-R-VB can be used for efficient switching control during battery charging and discharging.
4. **Power Tools and Home Appliances**:
This device can be used in motor control circuits in power tools and home appliances to ensure that current can be smoothly switched and effectively drive the load. The dual-channel design enables it to effectively cope with complex current requirements and improve the efficiency and response speed of the equipment.
5. **Automotive Electronics**:
In automotive electronic systems, especially in electric drive and energy recovery systems, the UT6401L-AG6-R-VB can be used in current switching, load distribution, and power conversion modules. It can provide efficient current control and stable performance to meet the needs of power-intensive applications in automobiles.
Through these applications, the UT6401L-AG6-R-VB provides excellent performance, especially suitable for occasions requiring high efficiency and low power consumption.
1. **Power management**:
UT6401L-AG6-R-VB can be used in power conversion circuits, especially in low voltage and high current requirements. For example, in a switching power supply (SMPS), MOSFET can be used as the main switching element to efficiently control the current flow while reducing heat generation. Its low RDS(ON) value ensures high efficiency of the power system.
2. **Load switch**:
In the load switch circuit, the dual PN channel configuration enables UT6401L-AG6-R-VB to work effectively in both positive and negative directions. For example, it can be used as a switching element in a DC-DC converter, capable of handling large currents while maintaining low conduction losses.
3. **Battery management system (BMS)**:
This MOSFET is also suitable for current switching and protection in battery management systems. Due to its high conduction capability and low power consumption, the UT6401L-AG6-R-VB can be used for efficient switching control during battery charging and discharging.
4. **Power Tools and Home Appliances**:
This device can be used in motor control circuits in power tools and home appliances to ensure that current can be smoothly switched and effectively drive the load. The dual-channel design enables it to effectively cope with complex current requirements and improve the efficiency and response speed of the equipment.
5. **Automotive Electronics**:
In automotive electronic systems, especially in electric drive and energy recovery systems, the UT6401L-AG6-R-VB can be used in current switching, load distribution, and power conversion modules. It can provide efficient current control and stable performance to meet the needs of power-intensive applications in automobiles.
Through these applications, the UT6401L-AG6-R-VB provides excellent performance, especially suitable for occasions requiring high efficiency and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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