UT60T03-TN3-R-VB Product details
Product introduction:
**UT60T03-TN3-R-VB** is a single N-Channel MOSFET in TO252 package, designed for high-efficiency switching applications and power management systems. Its maximum drain-source voltage (VDS) is 30V, and it supports a gate-source voltage (VGS) of ±20V. The gate threshold voltage (Vth) of this MOSFET is 1.7V, which can be turned on at a lower gate voltage, suitable for low-voltage working environment. Its on-resistance (RDS(ON)) is 6mΩ at VGS=4.5V and 5mΩ at VGS=10V, showing extremely low power consumption and efficient switching characteristics, suitable for high current applications. Using Trench technology, this MOSFET has significant advantages in high-frequency and fast switching applications. It has a maximum drain current (ID) of 80A, suitable for power management and power conversion modules that require high current carrying capacity.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| **Parameter** | **Value** | **Description** |
|-------------------|-------------------------------------|----------------------------------------------------|
| **Model** | UT60T03-TN3-R-VB | MOSFET model|
| **Package** | TO252 | TO252 package, suitable for medium and high power circuits|
| **Structure** | Single-N-Channel | Single N-type MOSFET |
| **VDS** | 30V | Maximum drain-source voltage|
| **VGS** | ±20V | Maximum gate-source voltage|
| **Vth** | 1.7V | Gate threshold voltage|
| **RDS(ON)** | 6mΩ@VGS=4.5V | On-resistance at VGS=4.5V|
| **RDS(ON)** | 5mΩ@VGS=10V | On-resistance at VGS=10V|
| **ID** | 80A | Maximum drain current|
| **Technology** | Trench | Trench technology provides low on-resistance and efficient switching performance|
Domain and module applications:
**Power management system: **
UT60T03-TN3-R-VB is widely used in power management systems, especially in high-efficiency DC-DC converters and power modules. Due to its low RDS(ON) value, it can effectively reduce power loss and improve the overall energy efficiency of the system. In high-power power modules and communication equipment, UT60T03-TN3-R-VB provides precise control and stable output for power conversion, ensuring efficient and stable operation of the system.
**Motor drive: **
In motor drive systems, UT60T03-TN3-R-VB can provide stable and efficient current control through its 80A drain current carrying capacity and low on-resistance characteristics. It is suitable for DC motor, stepper motor and brushless DC motor (BLDC) drive circuits, especially for applications such as power tools, electric bicycles and electric vehicles, which can effectively improve the response speed and efficiency of the drive system.
**LED drive circuit:**
In the LED drive circuit, the UT60T03-TN3-R-VB provides excellent performance and is suitable for efficiently driving high-power LED lamps. With low RDS(ON) and high current carrying capability, this MOSFET is able to reduce power loss and improve energy efficiency, and is suitable for a variety of lighting applications, including architectural lighting, outdoor lighting, and commercial lighting.
**Battery Management System (BMS):**
UT60T03-TN3-R-VB is also widely used in battery management systems (BMS), especially in battery charge and discharge control and battery protection circuits. Due to its high current handling capability and low power consumption characteristics, the UT60T03-TN3-R-VB is able to efficiently manage battery charging, discharging, and overload protection, and is widely used in electric vehicles (EVs) and renewable energy storage systems (such as solar and wind energy storage).
**Inverter:**
UT60T03-TN3-R-VB is suitable for inverter circuits, especially solar inverters and other types of power conversion systems. It can efficiently convert DC to AC to ensure stable energy output, especially in high-power and high-frequency applications, showing its stability and high efficiency.
**Overcurrent protection and load switching:**
In overcurrent protection and load switching applications, UT60T03-TN3-R-VB can effectively control the flow of current to prevent overload conditions. In power conversion circuits, it can quickly respond to load changes to ensure that the current does not exceed the designed safety range and protect the circuit from damage.
**Industrial automation and communication equipment:**
UT60T03-TN3-R-VB is also suitable for power management modules in industrial automation control systems and communication equipment. Its efficient switching characteristics enable it to maintain low power consumption in high-frequency and high-current applications, thereby improving the overall efficiency of the system, reducing heat, and improving the reliability of the equipment.
In summary, **UT60T03-TN3-R-VB** is a high-efficiency, low-power N-Channel MOSFET. With its excellent switching performance and high current carrying capacity, it is widely used in power management, drive systems, LED lighting, battery management, inverters and other fields. It is an ideal choice in modern power control systems.
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