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UT5504L-TM3-T-VB Product details
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1. Product Introduction - UT5504L-TM3-T-VB
**UT5504L-TM3-T-VB** is a **single P-channel MOSFET** in **TO251 package**, suitable for low voltage and medium current switching and power regulation applications. Its **VDS (drain-source voltage)** can withstand **-40V** at most, suitable for use in systems that require negative voltage control. The **VGS (gate-source voltage)** of the MOSFET can reach **±20V** at most, which is compatible with common driving voltages.
The **gate-source threshold voltage (Vth)** of this MOSFET is **-2V**, which means that the conductive channel can be turned on at a lower gate voltage, suitable for low voltage drive applications. Its **RDS(ON)** is **14mΩ** at **VGS = 4.5V** and **10mΩ** at **VGS = 10V**, ensuring low on-resistance and high current carrying capacity. The device has a maximum drain current (ID) of -55A, making it suitable for controlling high current loads.
The use of Trench technology optimizes switching performance, reduces on-resistance, and improves overall efficiency, making it particularly suitable for electronic systems that require high power efficiency and fast switching response.
**UT5504L-TM3-T-VB** is a **single P-channel MOSFET** in **TO251 package**, suitable for low voltage and medium current switching and power regulation applications. Its **VDS (drain-source voltage)** can withstand **-40V** at most, suitable for use in systems that require negative voltage control. The **VGS (gate-source voltage)** of the MOSFET can reach **±20V** at most, which is compatible with common driving voltages.
The **gate-source threshold voltage (Vth)** of this MOSFET is **-2V**, which means that the conductive channel can be turned on at a lower gate voltage, suitable for low voltage drive applications. Its **RDS(ON)** is **14mΩ** at **VGS = 4.5V** and **10mΩ** at **VGS = 10V**, ensuring low on-resistance and high current carrying capacity. The device has a maximum drain current (ID) of -55A, making it suitable for controlling high current loads.
The use of Trench technology optimizes switching performance, reduces on-resistance, and improves overall efficiency, making it particularly suitable for electronic systems that require high power efficiency and fast switching response.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -40V | -2V | -55A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -40V | -2V | -55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -40V | -2V | -55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
2. Detailed parameter description
| **Parameter** | **Description** |
| ----------------- | ---------------------------------------------- |
| **Model** | UT5504L-TM3-T-VB |
| **Package** | TO251 |
| **Configuration** | Single P-channel MOSFET |
| **VDS (drain-source voltage)** | -40V |
| **VGS (gate-source voltage)** | ±20V |
| **Vth (gate-source threshold voltage)** | -2V |
| **RDS(ON)** | 14mΩ @ VGS = 4.5V |
| | 10mΩ @ VGS = 10V |
| **ID (drain current)** | -55A |
| **Technology** | Trench technology|
| **Maximum power** | About 70W (depending on the specific application voltage and current) |
| **Operating temperature range** | -55°C to +150°C |
- **VDS (drain-source voltage)**: Maximum **-40V**, suitable for negative voltage applications such as load control, reverse current switching, etc.
- **VGS (gate-source voltage)**: Maximum **±20V**, suitable for common gate drive voltage range.
- **Vth (gate-source threshold voltage)**: **-2V**, can be turned on with low gate voltage, ensuring lower on-voltage, suitable for low power design.
- **RDS(ON) (on-resistance)**: **14mΩ** at **VGS = 4.5V** and **10mΩ** at **VGS = 10V**, ensuring low power loss and high current conduction efficiency.
- **ID (drain current)**: Maximum **-55A**, able to support large current loads, suitable for high power applications.
- **Technology**: Adopt **Trench technology** to provide optimized switching characteristics, reduce conduction losses, and is suitable for applications requiring high efficiency.
| **Parameter** | **Description** |
| ----------------- | ---------------------------------------------- |
| **Model** | UT5504L-TM3-T-VB |
| **Package** | TO251 |
| **Configuration** | Single P-channel MOSFET |
| **VDS (drain-source voltage)** | -40V |
| **VGS (gate-source voltage)** | ±20V |
| **Vth (gate-source threshold voltage)** | -2V |
| **RDS(ON)** | 14mΩ @ VGS = 4.5V |
| | 10mΩ @ VGS = 10V |
| **ID (drain current)** | -55A |
| **Technology** | Trench technology|
| **Maximum power** | About 70W (depending on the specific application voltage and current) |
| **Operating temperature range** | -55°C to +150°C |
- **VDS (drain-source voltage)**: Maximum **-40V**, suitable for negative voltage applications such as load control, reverse current switching, etc.
- **VGS (gate-source voltage)**: Maximum **±20V**, suitable for common gate drive voltage range.
- **Vth (gate-source threshold voltage)**: **-2V**, can be turned on with low gate voltage, ensuring lower on-voltage, suitable for low power design.
- **RDS(ON) (on-resistance)**: **14mΩ** at **VGS = 4.5V** and **10mΩ** at **VGS = 10V**, ensuring low power loss and high current conduction efficiency.
- **ID (drain current)**: Maximum **-55A**, able to support large current loads, suitable for high power applications.
- **Technology**: Adopt **Trench technology** to provide optimized switching characteristics, reduce conduction losses, and is suitable for applications requiring high efficiency.
Domain and module applications：
3. Application fields and module examples
# **1. Battery management and power supply system**
**UT5504L-TM3-T-VB** is particularly suitable for **battery protection circuit** and **load switch** in **battery management system (BMS)**, which can effectively control the current flow during battery charging and discharging. Its **low on-resistance** and **high current capability** enable it to effectively reduce battery loss and extend battery life in battery-driven electronic systems. It is suitable for battery-driven devices such as **power tools, electric vehicles** and **wearable devices**.
# **6. Reverse current protection and load switching**
Due to its **P-type channel configuration**, **UT5504L-TM3-T-VB** is very suitable for **reverse current protection** or **load switching**. In multiple modules, it can prevent reverse current flow from causing circuit failures, such as in **inverters, charging equipment, and battery protection systems**, ensuring that the current flows in the correct direction to avoid system damage.
# **Summary**
**UT5504L-TM3-T-VB** is a superior **P-channel MOSFET** that performs well in **battery management, electronic drive systems, power converters, LED lighting, solar inverters** and other fields. Its low on-resistance and high current capability make it ideal for high-efficiency applications, while the application of Trench technology improves its switching efficiency and overall reliability.
# **1. Battery management and power supply system**
**UT5504L-TM3-T-VB** is particularly suitable for **battery protection circuit** and **load switch** in **battery management system (BMS)**, which can effectively control the current flow during battery charging and discharging. Its **low on-resistance** and **high current capability** enable it to effectively reduce battery loss and extend battery life in battery-driven electronic systems. It is suitable for battery-driven devices such as **power tools, electric vehicles** and **wearable devices**.
# **6. Reverse current protection and load switching**
Due to its **P-type channel configuration**, **UT5504L-TM3-T-VB** is very suitable for **reverse current protection** or **load switching**. In multiple modules, it can prevent reverse current flow from causing circuit failures, such as in **inverters, charging equipment, and battery protection systems**, ensuring that the current flows in the correct direction to avoid system damage.
# **Summary**
**UT5504L-TM3-T-VB** is a superior **P-channel MOSFET** that performs well in **battery management, electronic drive systems, power converters, LED lighting, solar inverters** and other fields. Its low on-resistance and high current capability make it ideal for high-efficiency applications, while the application of Trench technology improves its switching efficiency and overall reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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