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UT45N03L-VB Product details
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1. Product Introduction
**UT45N03L-VB** is a single N-Channel MOSFET in TO251 package, designed for high-efficiency power management and power control applications. This MOSFET has a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 50A. Its low on-resistance (RDS(ON)) is 9mΩ (VGS=4.5V) and 7mΩ (VGS=10V), which can effectively reduce power loss and improve system efficiency. The gate threshold voltage (Vth) of UT45N03L-VB is 1.7V, which can be turned on at a lower gate voltage, making it very suitable for low-voltage drive applications. Using Trench technology, it provides fast switching and high-efficiency performance, and is widely used in power management, LED drive, motor control and high-efficiency DC-DC converters.
**UT45N03L-VB** is a single N-Channel MOSFET in TO251 package, designed for high-efficiency power management and power control applications. This MOSFET has a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 50A. Its low on-resistance (RDS(ON)) is 9mΩ (VGS=4.5V) and 7mΩ (VGS=10V), which can effectively reduce power loss and improve system efficiency. The gate threshold voltage (Vth) of UT45N03L-VB is 1.7V, which can be turned on at a lower gate voltage, making it very suitable for low-voltage drive applications. Using Trench technology, it provides fast switching and high-efficiency performance, and is widely used in power management, LED drive, motor control and high-efficiency DC-DC converters.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-------------------|-------------------------------------|----------------------------------------------------|
| **Model** | UT45N03L-VB | MOSFET model|
| **Package** | TO251 | TO251 package, suitable for high power and high heat dissipation applications|
| **Structure** | Single-N-Channel | Single N-type MOSFET structure|
| **VDS** | 30V | Maximum drain-source voltage|
| **VGS** | ±20V | Maximum gate-source voltage|
| **Vth** | 1.7V | Gate threshold voltage|
| **RDS(ON)** | 9mΩ@VGS=4.5V | On-resistance at VGS=4.5V|
| **RDS(ON)** | 7mΩ@VGS=10V | On-resistance at VGS=10V|
| **ID** | 50A | Maximum drain current|
| **Technology** | Trench | Trench technology provides low on-resistance and efficient switching performance|
| **Parameter** | **Value** | **Description** |
|-------------------|-------------------------------------|----------------------------------------------------|
| **Model** | UT45N03L-VB | MOSFET model|
| **Package** | TO251 | TO251 package, suitable for high power and high heat dissipation applications|
| **Structure** | Single-N-Channel | Single N-type MOSFET structure|
| **VDS** | 30V | Maximum drain-source voltage|
| **VGS** | ±20V | Maximum gate-source voltage|
| **Vth** | 1.7V | Gate threshold voltage|
| **RDS(ON)** | 9mΩ@VGS=4.5V | On-resistance at VGS=4.5V|
| **RDS(ON)** | 7mΩ@VGS=10V | On-resistance at VGS=10V|
| **ID** | 50A | Maximum drain current|
| **Technology** | Trench | Trench technology provides low on-resistance and efficient switching performance|
Domain and module applications：
3. Application fields and module examples
**Power management and DC-DC converters: **
UT45N03L-VB is widely used in power management and DC-DC converters, especially in applications requiring high current and high efficiency. Its low RDS(ON) characteristics effectively reduce power loss and are suitable for use in power systems such as buck converters and boost converters. In power modules, UT45N03L-VB provides stable and efficient current conversion, which helps improve the efficiency and stability of the entire power system.
**LED drive and lighting system: **
UT45N03L-VB is suitable for use in LED drive circuits, especially in high-power LED lighting systems, due to its low on-resistance and high current capability. In LED drivers, it can provide stable current control to ensure high efficiency of LED lighting, and effectively reduce the power loss of the system and extend the service life of the LED.
**Motor Control and Drive:**
This MOSFET can withstand currents up to 50A and is suitable for use in motor control circuits, especially in power tools, electric vehicles and other fields that require high power current loads. UT45N03L-VB provides efficient current switching capabilities, allowing the motor to start and run smoothly while ensuring low energy losses and high efficiency.
**Battery Management System (BMS):**
In battery management systems, the high current capability and low RDS(ON) characteristics of UT45N03L-VB make it an ideal choice, especially in lithium batteries and other high-power battery systems. It can provide precise current regulation and protect the battery from overcurrent and overvoltage damage during charging and discharging, thereby extending the battery life and improving the safety of the battery system.
**Power Switching and Overcurrent Protection:**
UT45N03L-VB can provide efficient current control in overcurrent protection circuits, especially for scenarios that require fast response and high load capacity. It is suitable for current protection circuits, overcurrent protection modules, etc., and can ensure the stable operation of the system under high load conditions.
**Electrical drive and automation control:**
Due to its excellent conduction performance and high current capability, UT45N03L-VB is also widely used in automation control systems and electrical drives, especially in the fields of robots, automation equipment, sensor control, etc. Its low power consumption characteristics help reduce the overall energy consumption of the system and ensure the efficient and stable operation of the system.
In summary, **UT45N03L-VB** provides efficient and stable solutions in multiple fields, especially for high-power applications such as power management, LED lighting, motor control, DC-DC conversion, etc. It is a power MOSFET with excellent performance.
**Power management and DC-DC converters: **
UT45N03L-VB is widely used in power management and DC-DC converters, especially in applications requiring high current and high efficiency. Its low RDS(ON) characteristics effectively reduce power loss and are suitable for use in power systems such as buck converters and boost converters. In power modules, UT45N03L-VB provides stable and efficient current conversion, which helps improve the efficiency and stability of the entire power system.
**LED drive and lighting system: **
UT45N03L-VB is suitable for use in LED drive circuits, especially in high-power LED lighting systems, due to its low on-resistance and high current capability. In LED drivers, it can provide stable current control to ensure high efficiency of LED lighting, and effectively reduce the power loss of the system and extend the service life of the LED.
**Motor Control and Drive:**
This MOSFET can withstand currents up to 50A and is suitable for use in motor control circuits, especially in power tools, electric vehicles and other fields that require high power current loads. UT45N03L-VB provides efficient current switching capabilities, allowing the motor to start and run smoothly while ensuring low energy losses and high efficiency.
**Battery Management System (BMS):**
In battery management systems, the high current capability and low RDS(ON) characteristics of UT45N03L-VB make it an ideal choice, especially in lithium batteries and other high-power battery systems. It can provide precise current regulation and protect the battery from overcurrent and overvoltage damage during charging and discharging, thereby extending the battery life and improving the safety of the battery system.
**Power Switching and Overcurrent Protection:**
UT45N03L-VB can provide efficient current control in overcurrent protection circuits, especially for scenarios that require fast response and high load capacity. It is suitable for current protection circuits, overcurrent protection modules, etc., and can ensure the stable operation of the system under high load conditions.
**Electrical drive and automation control:**
Due to its excellent conduction performance and high current capability, UT45N03L-VB is also widely used in automation control systems and electrical drives, especially in the fields of robots, automation equipment, sensor control, etc. Its low power consumption characteristics help reduce the overall energy consumption of the system and ensure the efficient and stable operation of the system.
In summary, **UT45N03L-VB** provides efficient and stable solutions in multiple fields, especially for high-power applications such as power management, LED lighting, motor control, DC-DC conversion, etc. It is a power MOSFET with excellent performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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