Product introduction：
1. Product Introduction - UT4411L-S08-T-VB
**UT4411L-S08-T-VB** is a unipolar **P-type power MOSFET** in **SOP8** package, designed for low voltage, high efficiency power switch applications. The maximum **drain-source voltage (VDS)** of this MOSFET is **-30V**, suitable for medium and low voltage environments. **The gate-source voltage (VGS)** can reach **±20V** at most, and has a **gate-source threshold voltage (Vth)** of **-1.7V**, that is, it can be turned on at a lower gate-source voltage. **RDS(ON)** is **18mΩ** at **VGS = 10V** and **24mΩ** at **VGS = 4.5V**, showing low conduction loss, suitable for high current, high efficiency applications. The maximum drain current (ID) of this MOSFET is **-9A**, which can support higher current loads, and by adopting **Trench** technology, it provides optimized switching performance and lower on-resistance, suitable for a variety of power control scenarios.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-9A |
|
|
18mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-9A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-9A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P |
|
|
|
|
|
|
|
2. Detailed parameter description
| Parameter | Description |
| -------------- | ----------------------------- |
| **Model** | UT4411L-S08-T-VB |
| **Package** | SOP8 |
| **Configuration** | Unipolar P-type MOSFET |
| **VDS** | -30V |
| **VGS** | ±20V |
| **Vth** | -1.7V |
| **RDS(ON)** | 24mΩ @ VGS = 4.5V |
| | 18mΩ @ VGS = 10V |
| **ID** | -9A |
| **Technology** | Trench technology|
| **Maximum power** | About 50W (depending on application current and voltage) |
| **Operating temperature range** | -55°C to +150°C |
- **VDS**: The maximum drain-source voltage of this MOSFET is **-30V**, which is suitable for negative voltage and low voltage applications such as battery-driven devices.
- **VGS**: The maximum gate-source voltage is **±20V**, providing a wide control voltage range.
- **Vth**: The gate-source threshold voltage is **-1.7V**, which means that this MOSFET can be turned on at a lower gate voltage.
- **RDS(ON)**: The on-resistance is **24mΩ** at **VGS = 4.5V** and drops to **18mΩ** at **VGS = 10V**, which is suitable for high current applications and reduces power loss.
- **ID**: The maximum drain current is **-9A**, which can withstand large current loads and ensure stable operating performance.
- **Technology**: The use of **Trench** technology optimizes switching performance and on-resistance, improving overall efficiency.
Domain and module applications：
3. Application fields and module examples
# **1. Power management and conversion**
**UT4411L-S08-T-VB** is suitable for power management in **switching power supplies (SMPS)** and **DC-DC converters**. Due to its low **RDS(ON)** and high **ID**, this MOSFET can effectively reduce energy loss and improve conversion efficiency during power conversion. Especially when used in **battery chargers** or **power adapters**, it can reduce heat generation during efficient power conversion and improve system efficiency and reliability.
# **6. Industrial automation and power control**
In **industrial automation systems** and **power control modules**, **UT4411L-S08-T-VB** is widely used in **relay drive, switching power supply, dimming control and motor control** modules. This MOSFET can effectively improve the operating efficiency of industrial systems and reduce power consumption through efficient current switching and low power loss. It can work stably in industrial equipment, especially under high load conditions, to ensure smooth regulation of current.
# **Summary**
**UT4411L-S08-T-VB** is a **P-type power MOSFET** with low on-resistance and strong power carrying capacity, which is widely used in **power management, power tools, electric vehicles, solar inverters, LED drive systems** and **industrial power control**. Its low **RDS(ON)** and high **ID** characteristics make it perform well in high current and high efficiency application scenarios, suitable for various power conversion, regulation and switching control tasks.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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