Product introduction:
UT4406-S08-R-VB MOSFET Product Introduction
**UT4406-S08-R-VB** is a single N-channel MOSFET in a **SOP8** package, designed for high-efficiency switching applications. This MOSFET uses **Trench** technology and has extremely low on-resistance, a maximum drain-source voltage of 30V, and a maximum leakage current of 13A. The low RDS(ON) characteristics make it ideal for applications in areas such as power management, load driving, and battery management. This MOSFET is suitable for operation in high-efficiency power conversion, intelligent battery protection, and other high-efficiency switching systems. The advantages of the UT4406-S08-R-VB MOSFET include low power consumption, fast switching, and high efficiency, making it ideal for applications requiring fast response and low conduction losses.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: SOP8
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 11mΩ @ VGS = 4.5V
- 8mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 13A
- **Technology type**: Trench technology
Domain and module applications:
Applications and module examples
**1. Power Conversion Systems**
UT4406-S08-R-VB MOSFET is suitable for high-efficiency power conversion applications, especially in DC-DC converters, AC-DC adapters, and various power modules. In these applications, due to its low RDS(ON) characteristics, UT4406-S08-R-VB can effectively reduce conduction losses and improve overall efficiency. It is often used in power conversion modules to provide efficient voltage conversion and stable power output.
**2. Battery Management Systems (BMS)**
This MOSFET has important applications in battery management systems, especially in lithium battery charge and discharge control. UT4406-S08-R-VB MOSFET can quickly and accurately control the flow of current to prevent overcharging and over-discharging. Its low on-resistance characteristics ensure that the battery management system has higher efficiency when handling large currents and prolongs the battery life.
**3. Power Tools**
In power tools and other high-power mobile devices, the UT4406-S08-R-VB MOSFET can effectively control power switching in motor drive systems through its high current carrying capacity and fast switching characteristics. In the battery-powered system of power tools, this MOSFET can reduce power loss and improve the operating efficiency of the tool.
**4. Driver Circuits**
This MOSFET is widely used in various drive circuits, such as LED drive circuits, motor control circuits, etc. Due to its low RDS(ON) and high current carrying capacity, the UT4406-S08-R-VB MOSFET can provide stable, low-loss switching control in these drive applications to ensure efficient operation of the circuit.
**5. Industrial Power Modules**
In industrial power modules, the UT4406-S08-R-VB MOSFET is suitable for efficient power conversion applications such as inverters and uninterruptible power supplies (UPS). Due to its high current capability and low on-resistance, the UT4406-S08-R-VB is able to provide stable power output and improve the reliability and efficiency of the power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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