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UT3443L-AG6-R-VB Product details
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Product Introduction:
**UT3443L-AG6-R-VB** is a unipolar P-Channel power MOSFET in SOT23-6 package, suitable for low voltage and medium current switching applications. This MOSFET has a maximum drain-source voltage (VDS) of -30V, which can provide efficient switching characteristics when the current flows in the reverse direction. Its on-resistance (RDS(ON)) is 54mΩ (VGS=4.5V) and 49mΩ (VGS=10V) under different gate drive voltages. Under these conditions, it has low conduction losses and is suitable for circuits requiring high efficiency and low power consumption. Its maximum drain current (ID) is -4.8A, which can provide stable performance in a variety of medium power applications.
UT3443L-AG6-R-VB adopts **Trench technology**, and its trench structure effectively reduces switching losses and on-resistance, improving overall efficiency. This MOSFET has a wide range of applications in battery drive, power management, LED drive, motor control and other fields, and can provide high-efficiency, low-loss current control.
**UT3443L-AG6-R-VB** is a unipolar P-Channel power MOSFET in SOT23-6 package, suitable for low voltage and medium current switching applications. This MOSFET has a maximum drain-source voltage (VDS) of -30V, which can provide efficient switching characteristics when the current flows in the reverse direction. Its on-resistance (RDS(ON)) is 54mΩ (VGS=4.5V) and 49mΩ (VGS=10V) under different gate drive voltages. Under these conditions, it has low conduction losses and is suitable for circuits requiring high efficiency and low power consumption. Its maximum drain current (ID) is -4.8A, which can provide stable performance in a variety of medium power applications.
UT3443L-AG6-R-VB adopts **Trench technology**, and its trench structure effectively reduces switching losses and on-resistance, improving overall efficiency. This MOSFET has a wide range of applications in battery drive, power management, LED drive, motor control and other fields, and can provide high-efficiency, low-loss current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Detailed parameter description:
- **Package type: ** SOT23-6
- **Configuration: ** Single P-Channel
- **VDS (drain-source voltage): ** -30V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** -1.7V
- **RDS(ON) (on-resistance): **
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **ID (drain current): ** -4.8A
- **Technology: ** Trench (trench technology)
- **Maximum power consumption: ** 1.8W (depending on operating conditions)
- **Operating temperature range: ** -55°C to 150°C
- **Switching speed: ** Faster switching speed, suitable for high-frequency applications
- **Maximum drain-source voltage:** -30V
- **Package type: ** SOT23-6
- **Configuration: ** Single P-Channel
- **VDS (drain-source voltage): ** -30V
- **VGS (gate-source voltage): ** ±20V
- **Vth (threshold voltage): ** -1.7V
- **RDS(ON) (on-resistance): **
- 54mΩ @ VGS = 4.5V
- 49mΩ @ VGS = 10V
- **ID (drain current): ** -4.8A
- **Technology: ** Trench (trench technology)
- **Maximum power consumption: ** 1.8W (depending on operating conditions)
- **Operating temperature range: ** -55°C to 150°C
- **Switching speed: ** Faster switching speed, suitable for high-frequency applications
- **Maximum drain-source voltage:** -30V
Domain and module applications：
Application areas and module examples:
1. **Battery Management System (BMS)**:
UT3443L-AG6-R-VB is widely used in battery management systems, especially for battery charge and discharge control and protection circuits. Its low on-resistance and high drain current capability make it an ideal choice for battery protection circuits, which can efficiently control the flow of battery current and ensure safe operation of the battery. It is especially suitable for small battery packs or low-voltage battery management, such as lithium battery protection circuits.
2. **Switching Power Supply (SMPS)**:
In switching power supply (SMPS) applications, UT3443L-AG6-R-VB can be used as a low-side switch (load control). Its low RDS(ON) and high switching efficiency minimize the conduction loss during the power conversion process, thereby improving the power conversion efficiency. Especially in low-voltage DC-DC converters, as an efficient switching element, it can provide stable voltage and current output.
3. **LED drive circuit**:
This MOSFET can be used in efficient LED drive circuits. In LED drive, UT3443L-AG6-R-VB as a switching element can stably control the current flow to the LED, ensuring the stability and efficiency of the LED lighting system. Due to its low on-resistance, it can reduce the energy loss in the driving current process and improve the overall circuit efficiency.
4. **Motor control**:
UT3443L-AG6-R-VB is also suitable for low-power motor control modules. Its low RDS(ON) and high drain current carrying capacity enable it to efficiently control the current flow in motor drive, especially in DC motor or small motor drive systems, providing stable current control and efficient power conversion.
5. **Low voltage load switch**:
In low voltage load switch applications, UT3443L-AG6-R-VB can be used as a load control element, especially in applications that require efficient current switching. Its lower on-resistance and faster switching speed give it an advantage in situations with higher switching frequencies, ensuring fast response and stable control of load current.
6. **Power Management for Portable Devices**:
In portable electronic devices, such as smartphones and tablets, the UT3443L-AG6-R-VB can be used in power management systems to control the charging and discharging process of the battery. Due to its compact SOT23-6 package, it is suitable for applications with limited space while providing efficient current control and power management.
In summary, the **UT3443L-AG6-R-VB** is an efficient P-Channel MOSFET suitable for low voltage, high current, medium power switching applications. It is widely used in battery management, switching power supplies, LED drivers, motor control, and power management for portable devices, especially for situations requiring efficient current control and low conduction losses.
1. **Battery Management System (BMS)**:
UT3443L-AG6-R-VB is widely used in battery management systems, especially for battery charge and discharge control and protection circuits. Its low on-resistance and high drain current capability make it an ideal choice for battery protection circuits, which can efficiently control the flow of battery current and ensure safe operation of the battery. It is especially suitable for small battery packs or low-voltage battery management, such as lithium battery protection circuits.
2. **Switching Power Supply (SMPS)**:
In switching power supply (SMPS) applications, UT3443L-AG6-R-VB can be used as a low-side switch (load control). Its low RDS(ON) and high switching efficiency minimize the conduction loss during the power conversion process, thereby improving the power conversion efficiency. Especially in low-voltage DC-DC converters, as an efficient switching element, it can provide stable voltage and current output.
3. **LED drive circuit**:
This MOSFET can be used in efficient LED drive circuits. In LED drive, UT3443L-AG6-R-VB as a switching element can stably control the current flow to the LED, ensuring the stability and efficiency of the LED lighting system. Due to its low on-resistance, it can reduce the energy loss in the driving current process and improve the overall circuit efficiency.
4. **Motor control**:
UT3443L-AG6-R-VB is also suitable for low-power motor control modules. Its low RDS(ON) and high drain current carrying capacity enable it to efficiently control the current flow in motor drive, especially in DC motor or small motor drive systems, providing stable current control and efficient power conversion.
5. **Low voltage load switch**:
In low voltage load switch applications, UT3443L-AG6-R-VB can be used as a load control element, especially in applications that require efficient current switching. Its lower on-resistance and faster switching speed give it an advantage in situations with higher switching frequencies, ensuring fast response and stable control of load current.
6. **Power Management for Portable Devices**:
In portable electronic devices, such as smartphones and tablets, the UT3443L-AG6-R-VB can be used in power management systems to control the charging and discharging process of the battery. Due to its compact SOT23-6 package, it is suitable for applications with limited space while providing efficient current control and power management.
In summary, the **UT3443L-AG6-R-VB** is an efficient P-Channel MOSFET suitable for low voltage, high current, medium power switching applications. It is widely used in battery management, switching power supplies, LED drivers, motor control, and power management for portable devices, especially for situations requiring efficient current control and low conduction losses.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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