中文
English
UT30P04L-TM3-T-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
**UT30P04L-TM3-T-VB** is a **unipolar P-channel** power MOSFET in **TO251 package**, using **Trench technology**, with low on-resistance and high current carrying capacity, suitable for medium power power management and switching applications. This MOSFET has a **-40V** maximum drain-source voltage (VDS), suitable for applications requiring negative voltage control. Its **threshold voltage (Vth) is -2V**, ensuring that the device is smoothly turned on at an appropriate gate-source voltage. **RDS(ON)** is **10mΩ** at **VGS=10V** and **14mΩ** at **VGS=4.5V**, showing a low on-resistance, which helps improve efficiency and reduce power loss. **The maximum drain current (ID) is -55A**, enabling it to withstand large load currents, suitable for high power density applications. The device adopts Trench technology, has low switching loss and stable switching characteristics, and is widely used in power conversion, inverter, battery management and power control.
**UT30P04L-TM3-T-VB** is a **unipolar P-channel** power MOSFET in **TO251 package**, using **Trench technology**, with low on-resistance and high current carrying capacity, suitable for medium power power management and switching applications. This MOSFET has a **-40V** maximum drain-source voltage (VDS), suitable for applications requiring negative voltage control. Its **threshold voltage (Vth) is -2V**, ensuring that the device is smoothly turned on at an appropriate gate-source voltage. **RDS(ON)** is **10mΩ** at **VGS=10V** and **14mΩ** at **VGS=4.5V**, showing a low on-resistance, which helps improve efficiency and reduce power loss. **The maximum drain current (ID) is -55A**, enabling it to withstand large load currents, suitable for high power density applications. The device adopts Trench technology, has low switching loss and stable switching characteristics, and is widely used in power conversion, inverter, battery management and power control.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -40V | -2V | -55A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -40V | -2V | -55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -40V | -2V | -55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
2. Detailed parameter description
- **Package type**: TO251
- **Configuration**: Unipolar P-channel
- **Maximum drain-source voltage (VDS)**: -40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 10mΩ @VGS=10V
- 14mΩ @VGS=4.5V
- **Maximum drain current (ID)**: -55A
- **Technology**: Trench technology
- **Maximum power loss**: Calculated according to specific working conditions
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (junction-to-case)**: Low thermal resistance design to optimize heat dissipation performance
- **Input charge (Qg)**: Suitable for higher frequency switching applications
- **Radiation resistance**: Suitable for use in complex environments
- **Package type**: TO251
- **Configuration**: Unipolar P-channel
- **Maximum drain-source voltage (VDS)**: -40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 10mΩ @VGS=10V
- 14mΩ @VGS=4.5V
- **Maximum drain current (ID)**: -55A
- **Technology**: Trench technology
- **Maximum power loss**: Calculated according to specific working conditions
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (junction-to-case)**: Low thermal resistance design to optimize heat dissipation performance
- **Input charge (Qg)**: Suitable for higher frequency switching applications
- **Radiation resistance**: Suitable for use in complex environments
Domain and module applications：
3. Application fields and modules
# 1. **Power management and switching power supply (SMPS)**
UT30P04L-TM3-T-VB is widely used in **power management** and **switching power supply (SMPS)**, especially in **DC-DC converters** and **AC-DC power adapters**. The **-40V** maximum drain-source voltage (VDS) of this MOSFET is suitable for low-voltage power supply applications, while its low on-resistance (**10mΩ**@VGS=10V) can reduce switching losses and improve efficiency. In these applications, MOSFET can efficiently convert electrical energy and provide a more stable output voltage.
# 6. **LED lighting control and drive circuits**
UT30P04L-TM3-T-VB can also be used in **LED lighting control** and **drive circuits**. It can be used to adjust the current flowing through the LED and control its brightness, and is widely used in **intelligent lighting systems**. Its high current carrying capacity enables it to support high-power LED arrays, and has good efficiency, ensuring stable operation of the lighting system.
# 7. **High-frequency switches and RF power amplifiers**
Due to the use of Trench technology, UT30P04L-TM3-T-VB is also used in **high-frequency switches** and **RF power amplifiers**. Such applications usually require fast switching performance and low on-resistance, and MOSFETs can meet these requirements to ensure excellent performance in high-frequency signal processing.
In summary, UT30P04L-TM3-T-VB has a wide range of applications in **power management, battery management, inverters, LED lighting, automotive electronics and other fields with its **-40V** withstand voltage capability, low on-resistance (**10mΩ**@VGS=10V) and large current carrying capacity (**-55A**). It provides efficient power conversion and management and is suitable for various medium-power switches and power systems.
# 1. **Power management and switching power supply (SMPS)**
UT30P04L-TM3-T-VB is widely used in **power management** and **switching power supply (SMPS)**, especially in **DC-DC converters** and **AC-DC power adapters**. The **-40V** maximum drain-source voltage (VDS) of this MOSFET is suitable for low-voltage power supply applications, while its low on-resistance (**10mΩ**@VGS=10V) can reduce switching losses and improve efficiency. In these applications, MOSFET can efficiently convert electrical energy and provide a more stable output voltage.
# 6. **LED lighting control and drive circuits**
UT30P04L-TM3-T-VB can also be used in **LED lighting control** and **drive circuits**. It can be used to adjust the current flowing through the LED and control its brightness, and is widely used in **intelligent lighting systems**. Its high current carrying capacity enables it to support high-power LED arrays, and has good efficiency, ensuring stable operation of the lighting system.
# 7. **High-frequency switches and RF power amplifiers**
Due to the use of Trench technology, UT30P04L-TM3-T-VB is also used in **high-frequency switches** and **RF power amplifiers**. Such applications usually require fast switching performance and low on-resistance, and MOSFETs can meet these requirements to ensure excellent performance in high-frequency signal processing.
In summary, UT30P04L-TM3-T-VB has a wide range of applications in **power management, battery management, inverters, LED lighting, automotive electronics and other fields with its **-40V** withstand voltage capability, low on-resistance (**10mΩ**@VGS=10V) and large current carrying capacity (**-55A**). It provides efficient power conversion and management and is suitable for various medium-power switches and power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
