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UT30N03L-TF3-T-VB Product details

Product introduction:

UT30N03L-TF3-T-VB MOSFET Product Introduction

**UT30N03L-TF3-T-VB** is a single N-channel MOSFET in a **TO220** package, designed for high-efficiency switching applications. This model adopts advanced **Trench** technology and has extremely low on-resistance, making it suitable for high-current applications such as power management, load driving, and high-power current control systems. Its maximum drain-source voltage is 30V and its maximum drain current is 120A. It is suitable for scenarios such as power conversion and drive circuits that require fast switching and low power consumption. The low RDS(ON) characteristics give it a significant advantage in reducing power loss and improving system efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 30V 1.7V 120A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Package type**: TO220
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 120A
- **Technology type**: Trench technology

Domain and module applications:

Application fields and module examples

**1. Power Conversion and Management**
UT30N03L-TF3-T-VB MOSFET is widely used in high-efficiency power conversion modules, especially in DC-DC converters, battery management systems and other power management devices. Due to its low RDS(ON) characteristics, this MOSFET can effectively reduce conduction losses and improve the overall efficiency of the power system. In this application, the MOSFET acts as an efficient switching element to ensure low power consumption and high efficiency during power conversion.

**2. Battery Management Systems (BMS)**
UT30N03L-TF3-T-VB is an ideal choice in battery management systems, especially in lithium battery management and charge and discharge control. This MOSFET can achieve precise current control with high current handling capability (120A), reduce power loss during battery charging and discharging, and improve system efficiency to ensure battery safety and life.

**3. Power Control in Electric Vehicles**
In battery management and power system control of electric vehicles, the UT30N03L-TF3-T-VB MOSFET can effectively control current flow and power conversion. Due to its high current carrying capacity and low on-resistance, it can maintain low power consumption under high power loads, thereby improving the driving efficiency and endurance of electric vehicles.

**4. Motor Drive Circuits**
UT30N03L-TF3-T-VB MOSFET is suitable for a variety of motor drive applications, including DC motors, stepper motors, and brushless motors. In these motor drive circuits, the MOSFET can provide stable switching performance, reduce heat generation, and improve motor drive efficiency through its low RDS(ON) characteristics.

**5. Industrial Power and Control Systems**
In equipment such as industrial power modules, inverters, and uninterruptible power supplies (UPS), the UT30N03L-TF3-T-VB MOSFET is able to handle high current loads and ensure the efficiency and stability of the system. Its high current carrying capacity and low on-resistance make it an important switching element in power conversion systems, providing excellent performance in high-power current control applications.

Through these examples, the UT30N03L-TF3-T-VB MOSFET demonstrates its wide applicability in power management, battery control, electric vehicles, motor drives, and industrial power systems. This MOSFET meets the needs of multiple fields for high efficiency, low power consumption, and high reliability through its high current capability, low on-resistance, and efficient switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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