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UT3055-TN3-T-VB Product details
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Product Introduction
**UT3055-TN3-T-VB** is a **single N-channel MOSFET**, which adopts **TO252 package** and is designed for low-voltage, high-efficiency switching power supplies and high-power applications. Its **VDS** (maximum drain-source voltage) is **30V**, which is suitable for high-current applications in lower voltage environments. This MOSFET adopts **Trench technology** and has a very low **on-resistance (RDS(ON))**, which can provide extremely low power loss at a lower gate voltage and ensure efficient conduction performance. Its **maximum drain current (ID)** reaches **70A**, which is suitable for application scenarios that require high current carrying. Low **Vth** (threshold voltage, 1.7V) ensures that it can achieve switching operation at a lower gate voltage, making it widely used in a variety of power supply and load control systems.
**UT3055-TN3-T-VB** is a **single N-channel MOSFET**, which adopts **TO252 package** and is designed for low-voltage, high-efficiency switching power supplies and high-power applications. Its **VDS** (maximum drain-source voltage) is **30V**, which is suitable for high-current applications in lower voltage environments. This MOSFET adopts **Trench technology** and has a very low **on-resistance (RDS(ON))**, which can provide extremely low power loss at a lower gate voltage and ensure efficient conduction performance. Its **maximum drain current (ID)** reaches **70A**, which is suitable for application scenarios that require high current carrying. Low **Vth** (threshold voltage, 1.7V) ensures that it can achieve switching operation at a lower gate voltage, making it widely used in a variety of power supply and load control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: UT3055-TN3-T-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ@VGS=4.5V
- 7mΩ@VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C (typical)
- **Model**: UT3055-TN3-T-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ@VGS=4.5V
- 7mΩ@VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C (typical)
Domain and module applications：
Application fields and module examples
1. **DC-DC converters**
- Due to the **UT3055-TN3-T-VB**'s extremely low on-resistance (7mΩ), it is very suitable for **DC-DC converters**, especially those requiring high efficiency and low power loss. In these converters, MOSFET works as a switching element to ensure stable and efficient voltage conversion under high current conditions while minimizing energy loss.
2. **Power Management Systems**
- Due to its **maximum drain current (ID) of 70A** and **low Vth (1.7V)**, this MOSFET is very suitable for **power management systems**, especially in smart power supplies, battery management systems (BMS) and **charging management modules**. It can achieve efficient power switching in a lower voltage and high current environment, thereby improving the overall performance of the system.
3. **Power tools and home appliances**
- In **power tools** and **home appliances**, UT3055-TN3-T-VB is suitable for motor drive and load switching due to its large current carrying capacity. Especially in the motor drive system of power tools (such as electric drills, grinders, etc.), it can effectively manage and control the current, providing efficient and stable working performance.
4. **Automotive electronic systems**
- UT3055-TN3-T-VB is also suitable for **automotive electronic systems**, especially in **electric vehicles (EV)** and **hybrid electric vehicles (HEV)**, for **battery management systems (BMS)** and **motor drive circuits**. Its high current capability and low on-resistance enable it to work stably under high loads, ensuring efficient control of the battery charging and discharging process.
5. **Load Switch and High-Frequency Switching Circuits**
- Due to its **high switching frequency** and low **on-resistance**, this MOSFET is particularly suitable for **load switching** and **high-frequency switching circuits**. For example, it is used in power switches and signal processing systems of various electronic products. It can switch efficiently and is not prone to generating excessive heat, thus improving the overall efficiency of the system.
6. **LED Drive Circuit**
- In the **LED drive circuit**, UT3055-TN3-T-VB, as an efficient switching element, can accurately control the current and ensure the stable operation of the LED lamps. Its low on-resistance reduces the power loss in the circuit, improves the efficiency of the drive current and the light effect of the LED.
1. **DC-DC converters**
- Due to the **UT3055-TN3-T-VB**'s extremely low on-resistance (7mΩ), it is very suitable for **DC-DC converters**, especially those requiring high efficiency and low power loss. In these converters, MOSFET works as a switching element to ensure stable and efficient voltage conversion under high current conditions while minimizing energy loss.
2. **Power Management Systems**
- Due to its **maximum drain current (ID) of 70A** and **low Vth (1.7V)**, this MOSFET is very suitable for **power management systems**, especially in smart power supplies, battery management systems (BMS) and **charging management modules**. It can achieve efficient power switching in a lower voltage and high current environment, thereby improving the overall performance of the system.
3. **Power tools and home appliances**
- In **power tools** and **home appliances**, UT3055-TN3-T-VB is suitable for motor drive and load switching due to its large current carrying capacity. Especially in the motor drive system of power tools (such as electric drills, grinders, etc.), it can effectively manage and control the current, providing efficient and stable working performance.
4. **Automotive electronic systems**
- UT3055-TN3-T-VB is also suitable for **automotive electronic systems**, especially in **electric vehicles (EV)** and **hybrid electric vehicles (HEV)**, for **battery management systems (BMS)** and **motor drive circuits**. Its high current capability and low on-resistance enable it to work stably under high loads, ensuring efficient control of the battery charging and discharging process.
5. **Load Switch and High-Frequency Switching Circuits**
- Due to its **high switching frequency** and low **on-resistance**, this MOSFET is particularly suitable for **load switching** and **high-frequency switching circuits**. For example, it is used in power switches and signal processing systems of various electronic products. It can switch efficiently and is not prone to generating excessive heat, thus improving the overall efficiency of the system.
6. **LED Drive Circuit**
- In the **LED drive circuit**, UT3055-TN3-T-VB, as an efficient switching element, can accurately control the current and ensure the stable operation of the LED lamps. Its low on-resistance reduces the power loss in the circuit, improves the efficiency of the drive current and the light effect of the LED.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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