UT3055-TN3-R-VB Product details
Product introduction:
**UT3055-TN3-R-VB** is a single-channel N-type MOSFET in TO252 package with a drain-source voltage (VDS) rating of 30V, suitable for low-voltage, high-current switching applications. The device uses Trench technology and has very low on-resistance (RDS(ON)) and high leakage current carrying capacity, with a maximum leakage current of up to 70A. Its turn-on voltage (Vth) is 1.7V, and it can work normally under standard driving voltage. Due to its efficient conduction characteristics and low power loss, UT3055-TN3-R-VB is an ideal choice for many high-efficiency power systems and high-current switching applications.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Model**: UT3055-TN3-R-VB
- **Package**: TO252
- **Configuration**: Single channel N-type
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: 20V (±)
- **Vth (turn-on voltage)**: 1.7V
- **RDS(ON) (on-resistance)**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **ID (maximum leakage current)**: 70A
- **Technology**: Trench technology
Domain and module applications:
1. **High-efficiency DC-DC converter**
UT3055-TN3-R-VB is suitable for high-efficiency DC-DC converters, especially in low voltage (below 30V) and high current applications. Due to its extremely low RDS(ON) (only 7-9mΩ), it can effectively reduce power loss and improve conversion efficiency. It is widely used in portable devices, industrial power supplies and battery management systems.
2. **Battery Management System (BMS)**
In the battery management system (BMS), UT3055-TN3-R-VB can be used for battery voltage monitoring, charge and discharge control, and battery protection. Its low on-resistance and high current capability enable it to withstand large current loads and ensure the stability and efficiency of the system during long-term operation. It is particularly suitable for power tools, electric vehicles and other portable devices.
3. **Power switch and current protection circuit**
This MOSFET can be used as a power switch, overcurrent protection switch, and load switcher, and is suitable for various switching power supply systems. The low on-resistance and high current carrying capacity of UT3055-TN3-R-VB can maintain the stability and safety of the system when the power supply voltage fluctuates or the load changes, and is widely used in communications, consumer electronics, and industrial control systems.
4. **Power tools and motor drive systems**
In power tools and small motor drive systems, UT3055-TN3-R-VB provides efficient current control. Its high conductivity makes it suitable for driving high current loads, such as power tools, electric toys, model cars, etc. Low RDS(ON) also helps reduce system heat loss and improve overall performance.
5. **Smart home and automation equipment**
In smart home and automation control equipment, UT3055-TN3-R-VB has ideal switching performance, especially in situations where low voltage, high-efficiency current switching is required. It can be used in smart sockets, electric curtains, smart lamps and other equipment to control power supply and improve energy efficiency.
6. **Low-power wireless devices and IoT applications**
Because UT3055-TN3-R-VB has low on-resistance and high current handling capability, it is also suitable for low-power wireless devices and IoT applications. Especially in wireless communication equipment that requires frequent switching and efficient power conversion, this MOSFET can effectively optimize battery life and system energy efficiency.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image